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    90D MARKING Search Results

    90D MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC
    		Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) PDF Buy
    MG80C186-10/BZA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    54ACT244/B2A
    		Rochester Electronics LLC 54ACT244/B2A - Dual marked (5962-8776001B2A) PDF Buy
    ICM7555MTV/883
    		Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80186-8/BYC
    		Rochester Electronics LLC 80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) PDF Buy

    90D MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    90d marking

    Contextual Info: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature


    Original     		SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 08-Apr-05 90d marking PDF

    74281

    Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature


    Original     		SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 08-Apr-05 74281 PDF

    Contextual Info: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature


    Original     		SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 08-Apr-05 PDF

    Contextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) RDS(on) () ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • 175 °C Junction Temperatur RoHS • 100 % Rg and UIS Tested COMPLIANT


    Original     		SUM90N06-4m4P O-263 SUM90N06-4m4P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 08-Apr-05 PDF

    Contextual Info: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUM90N10-8m2P O-263 SUM90N10-8m2P-E3 08-Apr-05 PDF

    Contextual Info: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 08-Apr-05 PDF

    Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 18-Jul-08 PDF

    74641

    Abstract: SUP90N06-5M0P
    Contextual Info: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N06-5m0P O-220AB SUP90N06-5m0P-E3 18-Jul-08 74641 SUP90N06-5M0P PDF

    Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUM90N06-5m5P O-263 SUM90N06-5m5P-E3 18-Jul-08 PDF

    ON148

    Abstract: 72508
    Contextual Info: SUP90N06-6m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.006 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUP90N06-6m0P O-220AB SUP90N06-6m0P-E3 18-Jul-08 ON148 72508 PDF

    Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 11-Mar-11 PDF

    SUM90N08-6m2P-E3

    Abstract: mosfet SOA testing
    Contextual Info: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 11-Mar-11 SUM90N08-6m2P-E3 mosfet SOA testing PDF

    Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT


    Original     		SUP90N10-8m8P 2002/95/EC O-220AB SUP90N10-8m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT


    Original     		SUP90N10-8m8P 2002/95/EC O-220AB SUP90N10-8m8P-E3 11-Mar-11 PDF

    Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT


    Original     		SUP90N10-8m8P 2002/95/EC O-220AB SUP90N10-8m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 18-Jul-08 PDF

    Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 08-Apr-05 PDF

    Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT


    Original     		SUP90N10-8m8P 2002/95/EC O-220AB SUP90N10-8m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification


    Original     		SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 11-Mar-11 PDF

    Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT


    Original     		SUP90N10-8m8P 2002/95/EC O-220AB SUP90N10-8m8P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF