90A 100V P Search Results

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTF200N10T RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings

IXTR140P10T

Contextual Info: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: SSE90N10-14 90A , 100V , RDS ON 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTH90P10P IXTT90P10P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 90A Ω 25mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTH90P10P IXTT90P10P = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

2482 TRANSISTOR

Contextual Info: APTM50AM38ST Phase leg Series & parallel diodes MOSFET Power Module VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • • •

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

TR-332

Abstract: 1000uf electrolytic capacitor
Contextual Info: Data Sheet: Powereta iQP Series –Single Output Quarter Brick TM Powereta iQP Series DC/DC Power Modules 48V Input, 1.5V / 90A Output Quarter Brick The Powereta™ Series offers an industry standard Double-P quarter brick high current power module with true usable output power.

Contextual Info: APTM50AM38SCT Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 500V RDSon = 38mΩ Ω max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs

N mosfet 100v 200A

Abstract: FQA90N10V2 100V N-Channel MOSFET
Contextual Info: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

N mosfet 100v 200A

Abstract: 100V N-channel mosfet FQH90N10V2
Contextual Info: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

25820

Abstract: 15KA GTCA28-900M-P15
Contextual Info: PRODUCT: GTCx28-xxxx-P15 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Gas Discharge Tube High Surge Two Electrode Series Overvoltage Protection Device Raychem Circuit Protection Products DOCUMENT: SCD 25820

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

25820

Abstract: crowbar overvoltage protections application note P15.120
Contextual Info: PRODUCT: GTCx28-xxxx-P15 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Gas Discharge Tube Standard Two Electrode Series DOCUMENT: SCD 25820 REV LETTER: D REV DATE: JULY 7, 2008 PAGE NO.: 1 OF 5 Overvoltage Protection Device

GTCR37-900M-P10-FS

Abstract: GTCA28-750M polyswitch marking P10
Contextual Info: Raychem Gas Discharge Tubes Catalog AUGUST 2004 www.circuitprotection.com INTRODUCTION OVERVIEW Raychem Circuit Protection, a business unit of Tyco Electronics Corporation, announces the addition of Gas Discharge Tubes GDTs to its circuit protection family. Raychem Circuit Protection continues to expand its circuit protection product offering in

Contextual Info: APTM20AM10ST Phase leg Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = 10mΩ Ω max @ Tj = 25°C ID = 175A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • • •

Contextual Info: APTM50AM38ST Phase leg Series & parallel diodes MOSFET Power Module NTC2 VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NTC1 OUT VBUS 0/VBUS OUT S1 S2 NTC2 G1 G2 NTC1 VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • Motor control · Switched Mode Power Supplies

SDT96308

Abstract: sdt96
Contextual Info: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

NTE2954

Contextual Info: NTE2954 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Low Gate Charge: 147nC Typ D Low Reverse Transfer Capacitance: 300pF Typ D Fast Switching D 100% Avalanche Tested D Imporved dv/dt Capability Absolute Maximum Ratings: TC = +25°C unless otherwise specified

DS333

Contextual Info: APTM50AM38ST VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 OUT VBUS 0/ VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APTM50HM38FG Full - Bridge MOSFET Power Module VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C Application VB US • • • • Q3 Q1 S1 OUT2 G3 OUT1 G1 S3 Q2 Features Q4 • G2 G4 S2 S4 0/VBUS • • OUT1 G1 VBUS • G2 0/VBUS Welding converters

APTM50DUM38T

Contextual Info: APTM50DUM38T VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Dual common source MOSFET Power Module D1 Application • AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies D2 Q1 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 D1 S

APTM50AM38FT

Contextual Info: APTM50AM38FT VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Phase leg MOSFET Power Module VBUS NTC2 Q1 G1 OUT S1 Q2 G2 S2 0/VBU S G2 S2 VBUS 0/VBUS NTC1 OUT OUT S1 S2 NTC2 G1 G2 NTC1 Application • Welding converters · Switched Mode Power Supplies

APT0406

Abstract: APT0501 APT0502 d90a
Contextual Info: APTM50AM38STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance