90CL255 Search Results

Contextual Info: Am 90CL255 Low-Power 256K x 1 CMOS Nibble Mode DRAM DISTINCTIVE CHARACTERISTICS • • Extended refresh period — 32 ms Max. during standby Low data retention current — 230 mA (Max.) • 90CL255 OVERVIEW The 256K x 1 CMOS Low-Power (' L') DRAM versions share com m on functional descriptions, DC and AC characteristics with

Contextual Info: Am 90CL257 OVERVIEW The 256K x 1 CMOS Low-Power ' L' DRAM versions share com m on functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-'L') versions. The only additions to these sections are: DISTINCTIVE CHARACTERISTICS

Contextual Info: Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM OVERVIEW The 256K x 1 CMOS Low-Power 'L ' DRAM versions share com m on functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-’ L1) versions. The only additions to these sections are:

Contextual Info: Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM DISTINCTIVE CHARACTERISTICS • • Extended refresh period — 32 ms Max. during standby Low data retention current — 230 juA (Max.) • Low-power dissipation — 0.55 mW (Max.) ORDERING INFORMATION

Contextual Info: Am90CL256 Am 90CL256 Low-Power 256K x 1 CMOS Enhanced Page Mode DRAM O V E R V IE W T he 256K x 1 C M O S Low-Power 'L' D R A M versions share common functional descriptions, D C and A C characteristics with the corresponding standard C M O S (non-'L) versions. The only additions to these sections are: