transistor c 9018
Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF
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t0-92b500fi10kfitransistor c 9018+9transistor cl 1009011 9012 9013 9014 9018transistor 9014 npntransistor 9013 npn audio outputv. 9014 c9016 transistoraudio output transistor npn 90139011 npn transistornpn 9016 transistor
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CP1005
Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
Contextual Info: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I
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km90iikm90i5km901i/8km90ii/8+14km90i4km9015km90ito-92acp10059011 9012 9013 9014 9018c 9014 transistortransistor 9014 c npn9011 npn transistor9011 transistor9015 pnp90169013 npn output transistortransistor npn c 9014
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9011 9012 9013 9014 9018
Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER
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cl9000t0-92b10kfi9011 9012 9013 9014 9018+99011 npn transistortransistor c 9018npn 9016 transistorf 9016 transistortransistor 9014 c npnc 9014 transistor9018 transistor9016 transistorpnp transistor 9015
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AM9016
Abstract: AM9016EPC AM9016DPC AM9016FPC AM9016EDC AM9016CPC AM9016DDC AM9016CDC AM9016FDC am9016e
Contextual Info: Am9016 16,384 x 1 D ynam ic R/W Random A ccess M em ory DISTINCTIVE CHARACTERISTICS G E N E R A L D ESCRIPTIO N • • • The A m 9016 is a high speed, 16 k-bit, dynam ic, read/w rite random access m em ory. It is organized as 16,384 words by 1 b it per w ord and is packaged in a standard 16-pin DIP. The
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mk4116462mw150ns320ns+1316-pinmil-std-883am901616k-bitam9016epcam9016dpcam9016fpcam9016edcam9016cpcam9016ddcam9016cdcam9016fdcam9016e
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transistor 716-analog
Abstract: 500MSPS AD9006
Contextual Info: □ ANALOG DEVICES FEATURES 500MSPS Encode Rate Very Low Input Capacitance: 8pF 30dB SNR @ 200MHz Analog Input MIL-STD-883 Available Bipolar Input Range ± 1 V Demultiplexed Outputs (AD9016) MIL-STD-883-Compliant Versions Available High Speed 6-Bit A/D Converters
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ad9006/ad9016500msps200mhzmil-std-883+4ad9016mil-std-883-compliantad9006transistor 716-analog
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transistor 7333
Abstract: BU426A
Contextual Info: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.
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bu426atransistor 7333 |
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transistor for horizontal deflection output
Abstract: NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor
Contextual Info: BU406 7A Power Transistor, 200V High Voltage Switching Features: High voltage, high speed transistor for horizontal deflection output stages of TV and CTV circuits. • Collector-Emitter Sustaining Voltage VCEV = 400V Minimum . • Low Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 5.0A.
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bu406transistor for horizontal deflection outputnpn transistor 50a 400v32 tv power transistor+2transistor bu406358 transistor
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BUX80
Abstract: 928 transistor NPN Transistor 50A 400V
Contextual Info: BUX80 Power Transistor High Voltage Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuit, motor control, solenoid and relay drivers. Features: • Collector-Emitter Sustaining VoltageVCEO sus = 400V (Minimum).
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bux80928 transistornpn transistor 50a 400v |
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7333 A
Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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mpsa067333 atransistor mpsa06npn 9016 transistor+1transistor 7333
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MPSA14
Abstract: transistor 7333
Contextual Info: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1
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BU208D
Abstract: NPN Transistor 1500V 20a H 9645
Contextual Info: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation
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bu208dnpn transistor 1500v 20ah 9645 |
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transistor BC461
Abstract: BC461 BC461 transistor CHARACTERISTICS OF BC461
Contextual Info: BC461 Medium Power Transistor Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • PNP Epitaxial Planar Silicon Transistors. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39
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bc461transistor bc461bc461 transistorcharacteristics of bc461 |
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MJE13005
Abstract: MJE-13005 MJE130 transistor mje13005 circuit based on MJE13005 8805 VOLTAGE REGULATOR MJE13005 TRANSISTOR F 9016 transistor transistor 7333
Contextual Info: MJE13005 Power Transistor Switchmode Series NPN Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuits, they are particularly suited for 115 and 220V switchmode applications such as switching regulator's, inverters, DC-DC
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mje13005mje-13005mje130transistor mje13005+5circuit based on mje130058805 voltage regulatormje13005 transistorf 9016 transistortransistor 7333
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npn darlington transistor 200 watts
Abstract: transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806
Contextual Info: BU806 Darlington Power Transistor Fast Switching Darlington Transistor are high voltage, high current devices for fast switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 200V (Minimum). • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5V (Maximum) at IC = 5.0A, IB = 50mA.
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bu806npn darlington transistor 200 wattstransistor 7333bu806 equivalent+11462, transistor
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2N3442
Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
Contextual Info: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage
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9275 transistor
Abstract: transistor k 208 MPSA42 MPSA42 multicomp
Contextual Info: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.
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mpsa429275 transistortransistor k 208mpsa42 multicomp |
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MPSA42
Contextual Info: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.
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Transistor C G 774 6-1
Abstract: transistor 2N4033 2N4033
Contextual Info: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53
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Transistor 358 to3
Abstract: 2N5038 20A npn transistor 7333
Contextual Info: 2N5038 Power Transistor Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features: • High speed -tf = 0.5µs Maximum .
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NPN 200 VOLTS POWER TRANSISTOR
Abstract: transistor buv48a npn 9016 transistor NPN Transistor 8A transistor 9016 transistor Ic 4A datasheet NPN BUV48A transistor 7333
Contextual Info: BUV48A Power Transistor High Voltage Switching Switchmode Series NPN Power Transistors are designed for use in high-voltage, highspeed, power switching regulators, converters, inverters, motor control system application. Features: • Collector-Emitter sustaining voltage VCEO sus = 450V (Minimum).
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buv48anpn 200 volts power transistortransistor buv48anpn 9016 transistor+4npn transistor 8atransistor 9016transistor ic 4a datasheet npntransistor 7333
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bf199 equivalent
Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Contextual Info: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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bf199bf199 equivalentbf199 transistorf 9016 transistor+6transistor 9016 npn03 transistordata bf199ic 9400bf199 rftransistor npn bf199
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TO-92 CASE MPSA06
Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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mpsa06to-92 case mpsa06f 9016 transistor7333 a+4mpsa06 equivalenttransistor mpsa06transistor 7333mpsa06 transistor
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MPSA44
Abstract: 9016 transistor
Contextual Info: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low
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pin configuration pnp transistor mpsa92
Abstract: mpsa92 MPSA42 9016 transistor
Contextual Info: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,
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