900V MOSFET Search Results

stp3nc90zfp

Abstract: L9 Zener STB3NC90Z-1 STP3NC90Z 3nc90z MOSFET 900V TO-220
Contextual Info: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω

3NC90

Abstract: stp3nc90zfp STB3NC90Z-1 STP3NC90Z L9 Zener
Contextual Info: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω

stp3nc90zfp

Abstract: STB3NC90Z-1 STP3NC90Z 3nc90z L9 Zener
Contextual Info: STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP3NC90Z/FP 900V < 3.5Ω 3.5 A STB3NC90Z-1 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω

E1013

Abstract: L9 Zener STB5NC90Z STB5NC90Z-1 STP5NC90Z STP5NC90ZFP
Contextual Info: STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP5NC90Z/FP 900V < 2.5Ω 4.6 A STB5NC90Z/-1 900V < 2.5Ω 4.6 A • ■ ■ ■ ■ TYPICAL RDS(on) = 2.1Ω

zener diode 46a

Abstract: L9 Zener STB5NC90Z-1 STP5NC90Z STP5NC90ZFP MOSFET 900V TO-220
Contextual Info: STP5NC90Z - STP5NC90ZFP STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/TO-220FP/I²PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP5NC90Z/FP 900V < 2.5Ω 4.6 A STB5NC90Z-1 900V < 2.5Ω 4.6 A TYPICAL RDS(on) = 2.1Ω

MOSFET 900V TO-220

Abstract: 6nc90z L9 Zener STP6NC90Z STB6NC90Z-1 STP6NC90ZFP Zener Diode 3A 6nc90 B6NC90Z
Contextual Info: STP6NC90Z - STP6NC90ZFP STB6NC90Z-1 N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP6NC90Z/FP 900V < 1.9 Ω 5.4 A STB6NC90Z-1 900V < 1.9 Ω 5.4 A TYPICAL RDS(on) = 1.55Ω

SSF7N90A

Contextual Info: N-CHANNEL POWER MOSFET SSF7N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V

mosfet NTE2384

Abstract: NTE2384 mosfet for 900V, 6A
Contextual Info: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

Contextual Info: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct

w11nk90z

Abstract: STW11NK90Z W11NK90 st mosfet JESD97
Contextual Info: STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STW11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized

W12NK90Z

Abstract: STW12NK90Z w12nk90 JESD97 W12NK
Contextual Info: STW12NK90Z N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW12NK90Z 900V <0.88Ω 11A 230W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

Contextual Info: KSM3N90 900V N-Channel MOSFET TO-220 Features • • • • • • 3.6A, 900V, RDS on = 4.25 Ω @ VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Y30NK90Z

Abstract: JESD97 STY30NK90Z
Contextual Info: STY30NK90Z N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STY30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

Contextual Info: KSMF4N90 900V N-Channel MOSFET TO-220F Features • • • • • • 2.5A, 900V, RDS on = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSM6N90C/KSMF6N90C 900V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 900V, RDS on = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSM8N90C/KSMF8N90C 900V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6.3A, 900V, RDS on = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSM4N90 900V N-Channel MOSFET TO-220 Features • • • • • • 4.2A, 900V, RDS on = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

inverter MOSFET 900V 3A

Abstract: IRFAF40
Contextual Info: PD - 90581 IRFAF40 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF40 BVDSS 900V RDS(on) 2.5Ω ID 4.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

SCHEMATIC 10kw POWER SUPPLY WITH IGBTS

Abstract: atx 500w schematic Solar Charge Controller smps MOSFET IGBT DRIVERS THEORY AND APPLICATIONS Solar Charge Controller PWM smps 500W 24V SMPS 200w circuit single output ATX SMPS ATX SMPS schematics schematic SMPS 24V
Contextual Info: Application Note, V1.0, February 2008 CoolMOS TM 900V New 900V class for superjunction devices A new horizon for SMPS and renewable energy applications Power Management & Supply Edition 2008-02-10 Published by Infineon Technologies AG 81726 Munich, Germany

STB3NC90

Abstract: STB3NC90Z
Contextual Info: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED

IRFAF30

Contextual Info: PD - 90617 IRFAF30 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF30 BVDSS 900V RDS(on) 4.0Ω ID 2.0Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

01-3316

Contextual Info: SEMELAB PLC bOE T> m 013316? 000D73D 3S3 • S M L B INI _ i s MOS POWER = V r= IN I ä SML1001R1AN 1000V 9.5A 1.1 Oft SML901R1AN 900V 9.5A 1.1 OQ SML1001R3AN 1000V 8.5A 1.30Q SML901R3AN 900V 8.5A 1.3012 SEM E LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

IXYA8N90C3D1

Contextual Info: Preliminary Technical Information IXYA8N90C3D1 IXYP8N90C3D1 900V XPTTM IGBTs GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR

8n90c

Abstract: 8n90 IXYP8N90C3 IGBTS
Contextual Info: Advance Technical Information IXYY8N90C3 IXYP8N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C