900NM Search Results

EUDYNA

Abstract: STM-16
Contextual Info: FID3Z2KX/LX PIN Photodiode FEATURES KX • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm diameter • Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,

Contextual Info: FCI-InGaAs-XXX-LCER High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads APPLICATIONS FEATURES  High  Low Noise Responsivity  High Speed  Spectral Range 900nm to 1700nm Speed Optical Communications  Gigabit Ethernet/Fibre Channel  SONET / SDH, ATM

Contextual Info: 1A226 H igivfîerlottnance LED The wavelength for this LED is 900nm — ideal for unique sensor applictions. The d ou b le-len s op tical system achieves optimum coupling of power into the fiber. It’s packaged in a her­ metically sealed can to survive harsh

Contextual Info: A dvanced P H o r o ik , I n c . ULTRA-LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: 0.32 A/W minimum, 0.36 A/W typical @ 632.8nm; 0.50 A/W minimum, 0.55 A/W typical @ 900nm Series Resistance: 100£2maximum measured by applying +10mA to photodiode and measuring voltage

centronic osd100 6

Abstract: OSD5-3T OSD60-3T QD50-3T OSD15-3T MO-700 QD100-3T OSD1-3T osd60 CENTRONIC INC
Contextual Info: CENTRONIC INC, mS2SD bSE D E-0 DIV □□□□474 TTÔ « C E N B Series 3T High Speed Detection of Infrared Wavelengths Series 3T devices are specifically processed to maximize responsivity in the 800 to 1000nm range. Typical responsivity at 900nm is .61 A/W for single junction devices and .58 A/W for quadrants. These photodiodes are fabricated on ultra high resistivity silicon

color sensor pd153

Abstract: PD153 circuit color sensor Sharp Semiconductor PD15-3 color sensor
Contextual Info: SH ARP ELEK/ MEL EC D IV 15E O C olor Sensor PD153 • I fllflO?^ 0005720 1 TO -18 Type Color Sensor F e a tu re s ■ 1. High sensitivity in long wavelength Shortcircuit current ratio Isc2 /Isci : MIN. 4.5 at A =900nm 2. Output corresponding to the wavelength of

445142

Contextual Info: Ultra Low Noise Ultra-Low Noise PIN Photodiodes Specifications Responsivity: Series Resistance: 0.50 A/W minimum, 0.55 A/W typical @ 900nm 100Ω maximum measured by applying +10mA to photodiode and measuring voltage across anode and cathode Part Number

Contextual Info: Right Angle - 2 Leads Clear Epoxy - 900nm Peak Right Angle - 2 Leads Clear Epoxy - 900nm Peak INDEX ● ● ● ● ● PRODUCT TREE Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support 1. 2. 3. 4. Product Gallery Opto-Electronic Components

Photodetector Array

Abstract: 860nm 20GHz Bandwidth PIN Photodetector 650NM photodetector
Contextual Info: FCI-GaAs-XXM High Speed GaAs Arrays APPLICATIONS  Fiber Optic Receiver Monitor  SM or MM Fiber Ribbon  Parallel Interconnects  DWDM FEATURES  High Speed FEATURES  High Responsivity  High Speed  Low Noise  High  Spectral Responsivity Range 900nm to 1700nm

Contextual Info: PRODUCT INFORMATION 900 nm 1A226 H igh-Ferformance LED The wavelength for this LED is 900nm —ideal for unique sensor applictions. The d ou b le-len s op tical system achieves optimum coupling of power into the fiber. It’s packaged in a her­ metically sealed can to survive harsh

Contextual Info: High Speed PIN High Speed PIN Photodiodes Specifications Responsivity: Series Resistance: Part Number 0.50 A/W minimum, 0.55 A/W typical @ 900nm. YAG enhanced are available for .35 A/W @ 1064nm on a custom basis. 100Ω maximum measured by applying +10mA to photodiode and measuring

centronic osd100 6

Abstract: LD20-3 MD100-3 MD25-3 OSD100-3 OSD200-3 QD100-3 QD320-3
Contextual Info: CENTRONIC LTD 4SE D m s ifl? □□□□on i Silicon Photodetectors « cent Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly suited to high speed pulsed applications in the region of 900nm and for other applications where the low capacitance obtained at 100

FID3Z1KX

Abstract: quantum city STM-16 InGaAs photodiode spectral response
Contextual Info: InGaAs PIN Photodiode FID3Z1KX/LX FEATURES • • • • • Data rates up to 2.5 Gb/s High Quantum Efficiency: 0.8A/W at 1,310nm Low dark current: 0.1nA Photosensitive area: 50µm diameter Wide spectral response range: 900nm to 1,600nm KX APPLICATIONS • Optical transmission system: STM-1 OC-3 ,

Photodiodes

Contextual Info: FCI-InGaAs-XXX-ACER High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages APPLICATIONS FEATURES  High  5° Angle Ceramic Noise  High Responsivity  High Speed  Spectral Range 900nm to 1700nm Speed Optical Communications  Gigabit Ethernet/Fibre Channel

TA23C

Contextual Info: FCI-InGaAs-XXX-WCER High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic Packages APPLICATIONS FEATURES  High  Low Noise Responsivity  High Speed  Spectral Range 900nm to 1700nm Speed Optical Communications  Gigabit Ethernet/Fibre Channel

900nm LED

Abstract: NJL5165K NJL61H000 NJL61H000A NJL61V000 NJL61V000A NJL62H000 NJL63H000 NJL63H000A NJL64H000
Contextual Info: 保守・廃品種一覧 1. 保守品種 品 目 フォトリフレクタ 品 名 NJL5165K-H1 代 替 品 NJL5165K-H2 相 違 点 外 形 ○ 特 性 ○ 2. 廃品種 品 赤外 LED 赤外 LED 目 λp=940nm (λp=900nm) 受光素子 (ﾌｫﾄﾀﾞｲｵｰﾄﾞ)

0852321021

Abstract: T-23 178 09T
Contextual Info: BI-CELL AND QUADRANT PHOTODIODES SPECIFICATIONS PER ELEMENT Responsivity: 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Non-uniformity between elements: Part Number Total Shunt Area Resistance1 per Element (mm2) 5% deviation max., 1% typ.

111 305

Abstract: T-23
Contextual Info: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown

SD-020

Abstract: 076113 T-23
Contextual Info: HIGH SPEED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area Active Area mm2 (in) SD 020-11-33-211 0.20 0.020 (dia). SD 041-11-33-211 0.85 0.040 x Dark Current1 at 50V Breakdown Voltage2 at 10µA Capacitance3

Contextual Info: ULTRA LOW NOISE PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Total Area mm2 SD 057-14-21-011 1.67 Active Area (in) 0.051 x Shunt Resistance1 Dark Current1 at 5V Breakdown

Contextual Info: Photo Diode Product No: MTD3010N Peak Sensitivity Wavelength: 900nm The MTD3010N is a photo diode in a TO-18 metal can domed package. It is well suited for high reliability and high speed applications. FEATURES APPLICATIONS > Linearity of Ee vs IL > Optical Switches

centronic osd100 6

Abstract: OSD15-5T OSD50-5T LD35-5T OSD35-5T LD20-5T OSD100-5T OSD5-ST OSD60-5T QD100-5T
Contextual Info: Series 5T Blue Sensitive for Biased or Unbiased Operation The Centronic Series 5 T photodiodes offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 4 3 0 - 900nm where the highest signal to noise ratio

Contextual Info: CENTRONIC LTD 45E D m S l f l 7 OOODOll 1 • C E N T Silicon Photodetectors Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly suited to high speed pulsed applications in the region of 900nm and for other applications where the low capacitance obtained at 100

TEFT4300

Abstract: 8239 Diode IR 8294 Infrared emitter
Contextual Info: TEFT4300 Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with l p 900nm).