900 NM LED Search Results

B5B-900-8

Contextual Info: B5B-900-8 TECHNICAL DATA LED, 5 mm GaAlAs B5B-900-8 is a GaAlAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a band of infrared light with a peak at 900 nm. Specifications • • • • Structure: GaAlAs Peak Wavelength: typ. 900 nm

Contextual Info: W WEITRON WT-T3A8FCH 5050 TOP LED Ceramics- Full Color Product Specifications_ Specification Iv Material Quantity Red: 450-715 mcd Green: 900-2250 mcd Blue: 220-450 mcd @ 20mA/ Ta= 25O C Tolerance±10% Red: 615-630 nm lambda Ao Green: 520-535 nm

Contextual Info: 深紫外光源 L12848-305 ●High output 約8倍 （LED比） UV CL L1 28 48 -3 05 ●Compact 原寸大 ピ ー ク 波 長 LE 30 5 D nm 3 10 nm タ イ プ 特長 発光波長分布 TLSZB0110JB 900 800 700 600 相対光出力 (%) ●高出力: LED(310 nm)に対して約8倍

Contextual Info: Dialight 591 - 7602-1XX True Surface Mount LED COLLECTOR ID Part No.* Configuration 591-7602-1 xx 900 nm Phototransistor Applications 3.0 • Control and drive circuits LED LEAD SOLDERING SURFACE A I 1-120] “ *i • Copiers • Proximity Sensors COLLECTOR

Contextual Info: 3mm Dialight Prism CBI Infra-Red Detector True Surface Mount LED Preliminary Design 591-7602-1 xx Part No. Configuration 591-7602-1 xx 900 nm Phototransistor Applications • Control and drive circuits • Copiers • Proximity Sensors • Data Links Benefits

1A226

Abstract: IR LED MITEL
Contextual Info: PRODUCT INFORMATION 900 nm 1A226 High-Performance LED The wavelength for this LED is 900nm —ideal for unique sensor applictions. The double-lens optical system achieves optimum coupling of power into the fiber. It’s packaged in a hermetically sealed can to survive harsh

Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 900 nm Type PDI-V490 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE + 0.005 [0.13] 0.080 [2.03]

metal detector sensor

Abstract: photovoltaic sensor
Contextual Info: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 900 nm Type PDI-V490 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]

Contextual Info: PHOTOSENSOR MODULE WITH THERMOELECTRIC COOLER H7844 Improved detection limit for near infrared to 900 nm FEATURES ●Low dark current (1/50 of that at room temperature) ●Fast cooling (3 minutes) by thermoelectric cooler directly coupled to the photocathode

"Thermoelectric Cooler"

Abstract: JST slp-02v SLR-02VF SP-315-60D-60H H7844 C10410 equivalent HR10A-7P-6S
Contextual Info: PHOTOSENSOR MODULE WITH THERMOELECTRIC COOLER H7844 New product of near infrared to 900 nm detection FEATURES ●A newly developed high sensitivity multialkali side-on photomultiplier tube ●Fast cooling (3 minutes) by thermoelectric cooler directly coupled to the photocathode

Contextual Info: Dialight 3mm Prism CBI® Infrared Detector True Surface Mount LED 4.3 [.170] Part No.* 591-7602-1xx COLLECTOR ID 6.1 [.240] 2.1 [.082] 2.8 [.112] 591-7602-1xx Configuration 900 nm Phototransistor 2.8 [.112] 5.0 [.198] Applications 3.2 [.125] MAX .1 [.004] MAX. BELOW

Contextual Info: Dîalîght 591 7602-1XX True Surface Mount LED - Part No.* 591-7602-1 xx COLLECTOR ID 2.1 6.1 [.082] ' [.240] ' Configuration 900 nm Phototransistor T ~ 2.8 [. 112] A p p licatio n s [.004] MAX. BELOW SURFACE A • Control and drive circuits v LED LEAD SOLDERING

LED 18000 mcd white

Abstract: LED 18000 mcd Green Clear GaP LED
Contextual Info: • Cluster LED Lamps I Shape Electrical/Optical Data Part No. Material Emitted Color Lens Peak Wave Length (nm) tv (mcd) Vf (V) Typ. Max. Min. Typ. IF (mA) Viewing Angle 201/2 Figure No. 26mm GaAIAs(Red) Water Clear 660 7.4 10 900 1495 20 30° GaN(Blue)

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. SSI —LXR501 OS RC 2848 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH Vf=2fiV TYP MAX UNITS 660 nm 2a.o Vf AXIAL INTENSITY 900 Vr mod VIEWING ANGLE 30 2x thêta FORWARD VOLTAGE REVERSE VOLTAGE

Contextual Info: M M m , T-3% MINIATURE LAMP WITH LENS High Intensity Wide Angle Data Display Products •Fresnel Lens ■Bayonet or Screw Base Modal1'1 MB402 MS402 IBayonet -R 1Screw -O -A -G -B LED Xpk Color nm RED 635 ORG 609 AMB 592 GRIM 520 BLU 465 Iv« (mcd) 900 (*4)

Contextual Info: PRODUCT INFORMATION 900 nm 1A226 H igh-Ferformance LED The wavelength for this LED is 900nm —ideal for unique sensor applictions. The d ou b le-len s op tical system achieves optimum coupling of power into the fiber. It’s packaged in a her­ metically sealed can to survive harsh

Contextual Info: Flangeless Round LEDs TCI Part No. Radial Leaded LED Chip Emitted Color Matrial λD nm Lens Color Iv (mcd) VF(v)@20mA Viewing Angle Typ. Max. 2θ1/2 Min. Typ. at IF= mA 2225 920 525 1135 1135 1135 1285 810 1135 1135 810 1135 1135 1800 3500 1300 900 1700 1900

Contextual Info: UNCONTROLLED DOCUMENT 05,90 [00,232] 0 5 .0 0 PART NUMBER REV. SSL-LX5093VC W 0 .1 9 7 ] ELECTRO—OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER SYMBOL MIN PEAK WAVELENGTH TYP MAX Vf Vr 5 lv X Y 900 AXIAL INTENSITY *1 CHROMATICITY COORDINATES^) TEST COND nm

Contextual Info: UNCONTROLLED DOCUMENT 05,90 [00,232] 0 5 .0 0 PART NUMBER REV. SSL-LX5093VC W 0 .1 9 7 ] ELECTRO—OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER SYMBOL MIN PEAK WAVELENGTH TYP MAX Vf Vr 5 lv X Y 900 AXIAL INTENSITY *1 CHROMATICITY COORDINATES^) TEST COND nm

Contextual Info: LED-1 B HIGH POWER GaAs INFRARED EMITTING DIODES 920 nm il OPTOELECTRONICS 1 0 900 PAGE BLVD. ST. LOUIS, M O . 63132 USA PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 FEATURES: PRODUCT DESCRIPTION: • Eight standard packages in This series of Infrared emitting diodes {IREDs consists of

C 34 F

Abstract: AR 601
Contextual Info: Kingbright THRO UG H-HO LE LED LAMPS L7104S L934S L7123S r\ f □ * , K -i K P art No. Em itting C o lo r + M aterial XD nm Le ns Ty pe Iv (m cd) @ 20 m A Min. I V iew ing A n 9 ,e Typ. 291/2 150 40 700 2000 1300 1300 1300 800 2000 3500 700 700 250 900 600

Contextual Info: UNCONTROLLED DOCUMENT 300 400 PART NUMBER REV. S S L - L X 5 0 9 3 S W C /A 500 600 700 800 900 WAVELENGTH nm "UNLESS UNCONTROLLED DOCUMENT OTHERWISE SPECIFIED TOLERANCES PER OECIIAL PRECISION ARE: X=±T (±0.039), XJUtO.5 (±0.020), X.XX=±0.2S (±0.010), X.XXX=±0.127 (±0.005). LEAD SIZE=±0.05 (±0.002), LEAD l£NGTH=±0.75 (±0.030). MIN=

Contextual Info: Kíngbríght BASED LED LAMPS B LB 101xxx-xV -P B LB 102xxx-xV -P B LFA 054xxx-xV £&• m Mj Material X D nm Lens Type Iv(m cd) V=6V Viewing *V=12V *V=28V Angle Min. f Typ. Dimension w ater clear 900 2200 20° 630 w ater clear *650 *1800 20° B LB 101S U R C /E 28V

l943

Contextual Info: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs