9.6A P MOSFET Search Results
9.6A P MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
9.6A P MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advanced Power Electronics Corp. AP4563AGH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 20mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 9.6A -40V 36mΩ |
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AP4563AGH-HF-3 O-252-4L AP4563AGH-HF-3 O-252 AP4563A 4563AGH | |
Contextual Info: 4302271 0053332 4 3Ö • HAS BUZ45 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1 9 9 1 Package Features TO-204AA BOTTOM VIEW • 9.6A, 50 0V • rDS on = °-6 n _ SOURCE • S O A is P o w e r- D is s ip a tio n Lim ited |
OCR Scan |
BUZ45 O-204AA | |
EIA-541
Abstract: IRF7101 MS-012AA
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IRF7460PbF EIA-481 EIA-541. EIA-541 IRF7101 MS-012AA | |
1610b
Abstract: U5505 IRFR5505 IRFU5505
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1610B IRFR/U5505 IRFR5505) IRFU5505) 1610b U5505 IRFR5505 IRFU5505 | |
JANSR2N7490T3
Abstract: IRHY57234CMSE T0-257AA
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93823B IRHY57234CMSE JANSR2N7490T3 O-257AA) MIL-PRF-19500/705 5M-1994. O-257AA. JANSR2N7490T3 IRHY57234CMSE T0-257AA | |
IRF7459
Abstract: B13AB 4.5V TO 100V INPUT REGULATOR
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3885A IRF7459 IRF7459 B13AB 4.5V TO 100V INPUT REGULATOR | |
Contextual Info: PD - 93886C IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance |
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93886C IRF7460 | |
IRF7459
Abstract: IRF74 4.5V TO 100V INPUT REGULATOR
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93885B IRF7459 IA-48 IRF7459 IRF74 4.5V TO 100V INPUT REGULATOR | |
4.5V TO 100V INPUT REGULATORContextual Info: PD - 95459A IRF7459PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l VDSS RDS on max 20V 9.0mΩ l l 12A High Frequency Buck Converters for Computer Processor Power |
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5459A IRF7459PbF EIA-481 EIA-541. 4.5V TO 100V INPUT REGULATOR | |
IRF7460Contextual Info: PD - 93886D IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance |
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93886D IRF7460 IA-48 IRF7460 | |
IRF7460Contextual Info: PD - 93886B IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectifica tion for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance |
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93886B IRF7460 Drai252-7105 IRF7460 | |
Contextual Info: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides |
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PD-93823C O-257AA) IRHY57234CMSE 5M-1994. O-257AA. | |
96078
Abstract: EIA-541 4.5V TO 100V INPUT REGULATOR
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6078A IRF7459UPbF EIA-481 EIA-541. 96078 EIA-541 4.5V TO 100V INPUT REGULATOR | |
1610b
Abstract: IRFR5505 U5505 IRFU5505 fu120
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1610B IRFR/U5505 IRFR5505) IRFU5505) 1610b IRFR5505 U5505 IRFU5505 fu120 | |
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Contextual Info: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides |
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PD-93823C O-257AA) IRHY57234CMSE 5M-1994. O-257AA. | |
FDMC8878Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mΩ Features tm General Description Max rDS on = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management |
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FDMC8878 FDMC8878 | |
Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management |
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FDMC8878 | |
FDMC8878/MAX498CWI-T-datasheetContextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management |
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FDMC8878 FDMC8878/MAX498CWI-T-datasheet | |
Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features tm General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management |
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FDMC8878 | |
IRFU
Abstract: IRFU 310
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OCR Scan |
IRFR/U5505 EIA-481 IRFU IRFU 310 | |
Contextual Info: PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses |
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IRF6621PbF IRF6621TRPbF | |
Contextual Info: PD - 97005A IRF6621 DirectFET Power MOSFET Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching |
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7005A IRF6621 | |
Contextual Info: PD - 94365A IRF6604 HEXFET Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques |
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4365A IRF6604 IRF6604 | |
irf6621
Abstract: IRF6621TR1PBF IRF6621TRPBF
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IRF6621PbF IRF6621TRPbF irf6621 IRF6621TR1PBF IRF6621TRPBF |