9 TH CLASS DATE SHEET Search Results

LDB 107

Contextual Info: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

BLF369-NXP

Abstract: transistor r8 BLF369 EZ90-25-TP VHF transmitter circuit
Contextual Info: BLF369 Multi-use VHF power LDMOS transistor Rev. 04 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.

pj88

Abstract: Hearing Aid Circuit Diagram AM 58 88S
Contextual Info: GENNUM C D R P Q R A T I a V.C. Preamp Hybrid f o p CfôSS D N GS3015 - HYB DATA SHEET FEATURES DESCRIPTION • Gennum's GL504 preamp T h e G S 3 0 1 5 in c o rp o ra te s G e n n u m 's G L 5 0 4 p re a m p , three of • mounts on back of Microtronic PJ88S VC Socket

9 th class date sheet

Contextual Info: GENNUM MAESTRO- H c DRPQRAT i DN Programmable Hybrid GM3014-HYB DATA SHEET FEATURES DESCRIPTION • programmable parameters - gain The p ro gra m m a ble hybrid is co m p o se d of the G P520A analog • • • • • signal processor, the GP521 controller m em ory ch ip and

laser diode philips

Abstract: 1300 nm Laser 40 mW 1300 laser diode rise time laser diod laser diode class I laser diode
Contextual Info: Philips Components CQF60/D _ A_ DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL

LS509

Abstract: L5509
Contextual Info: GENNUM C O R P O R A T I G 53019 Hybrid with L5509 Amplifier OM GS3019 - HYB DATA SHEET FEATURES • Gennum’s LS509 3 stage amplifier This hybrid is very sim ilar to G ennum 's 3010 with the exception that ca p a cito rs C2 and C3 on the GS3019 have • independent preamp can be used as telecoil

BLF872

Abstract: ez90 rogers 5880 OFDM transmitter UHF EZ90-25-TP
Contextual Info: BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from

laser diode 1550 ns single mode

Abstract: GENERAL SEMICONDUCTOR SM 3b diode 1550 laser diode dfb laser diode 1550 Semiconductor Laser International 1550 communication laser diode dfb 1550 nm laser diode DFB Laser-Diode 1550 nm laser diode philips 075mW
Contextual Info: Philips Components c q f s i /d A -D E V E L O P M E N T DATA This data sheet contains advance information and specifications which are subject to change without notice. BURIED HETEROJUNCTION InGaAsP DFB LASER DIODE

B845-93

Contextual Info: LANGUAGE PRODUCT SPECIFICATION ENGLISH TABLE OF CONTENTS REV. SHEET A REV. 1.0 SCOPE 2.0 PRODUCT DESCRIPTION 3.0 APPLICABLE DOCUMENTS AND SPECIFICATIONS 4.0 RATINGS 5.0 PERFORMANCE 5.1 ELECTRICAL PERFORMANCE 5.2 MECHANICAL PERFORMANCE 5.3 ENVIRONMENTAL PERFORMANCE

ez90

Abstract: ez902 BLF369 VHF transmitter circuit EZ90-25-TP
Contextual Info: BLF369 VHF power LDMOS transistor Rev. 01 — 13 April 2006 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Table 1: Typical performance

GS3039

Abstract: EM-3046 ba 521
Contextual Info: GENNUM C|CC|ass DHybrid C O R P O R A T I O N GS3039 DATA SHEET FEATURES DESCRIPTION • small outline for CIC applications The GS3Q39 is a G e n n u m p ro p rie ta ry h y b rid fo r C IC a p plication s. It in corpo rates a new ly de sig n e d in tegrated

Contextual Info: THL 20-WI Series Application Note DC/DC Converter 9 to 36Vdc or 18 to 75Vdc Input 3.3 to 15Vdc Single Outputs and ±12 & ±15Vdc Dual Outputs, 20W Features • Single output up to 4.5A  Dual output up to ±835mA  20 watts maximum output power

NPN Silicon Epitaxial Planar Transistor

Abstract: Zv-z 21 MX0912B350Y
Contextual Info: Data sheet sta tu s Preliminary specification date o t Issue July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION D ESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting

Hearing Aid Circuit Diagram

Abstract: pj88 1.5 Hearing Aid
Contextual Info: GENNUM C O R P O R A T I V.C. Preamp Hybrid for Class D O N GS301 5 - HYB DATA SHEET DESCRIPTION FEATURES • Gennum's GL504 preamp T h e G S 3 0 1 5 in c o rp o ra te s G e n n u m 's G L 5 0 4 p re a m p , three of • mounts on back of Microtronic PJ88S VC Socket

6322B

Abstract: MR GP522
Contextual Info: GENNUM C O R P O R A T I Programmable DynamEQ II ON GM303B DATA SHEET FEATURES DEVICE DESCRIPTION • DynamEQ3 II flexibility • six programmable parameters The GM 3036 program m able hybrid is com posed o f a DynamEQ® II Wide D ynam ic Range C om pression signal

Contextual Info: GENNUM High Gain Class A Amplifier LC507 DATA SHEET FEATURES • 76 dB typical gain open loop DESCRIPTION The LC 507 is a lo w voltage, 3 stage, linear cla ss A am plifier, a va ila b le in a G en num sin gle -in -lin e 4 pin M IC R O pa c. The • 1.0 to 3 VDC operating range

Contextual Info: 13 12 E 10 D .071 13.0 .515 7.15 .281 REF. NOTES: 1 MATERIALS: HOUSING - LIQUID CRYSTAL POLYMER. UL94 V-0 WAFER DIELECTRIC - LIQUID CRYSTAL POLYMER, UL94 V -0 CONTACT - COPPER ALLOY 2) FINISHES: SEE SHEET 4 3) PRODUCT SPECIFICATION: THIS PART CONFORMS TO MOLEX SPECIFICATION PS-75018-001.

Contextual Info: GEIMIMUM C O R P O I O DynamEQ I Dynamic Equalizer - Class D l\ l GS3021 - DATA SHEET FEATURES DESCRIPTION designed to drive class D integrated receivers The D yn am E Q I h y b rid is a d y n a m i c a l l y a d a p tiv e lo u d n e s s handles high input levels up to 100 mVRMS cleanly

nec 0882

Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

qml-38535

Contextual Info: £ 1 AMD t REVISIONS LTR DATE {y r - m o - d a DESCRIPTION I REV SHEET REV 15 SHEET REV STATUS OF SHEETS 16 17 PMIC N/A STANDARDIZED M IL IT A R Y DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A

Contextual Info: Class A Amplifier with 2 Independent Gain Blocks G E IM IM U M C O R P O R A T I O N GP509 DATA SHEET 60S FEATURES DESCRIPTION • low amplifier current typical 105 |iA Th e G P 5 0 9 is a C la s s A a m p lifie r u tiliz in g G e n n u m ’s p ro p rie ta ry

Contextual Info: GENNUM C O R P O R A T I O Programmable DynamEQ II IN G M 3038 PRELIMINARY DATA SHEET FEATURES DEVICE DESCRIPTION • DynamEQ® II flexibility • five programmable parameters The GM3038 program m able hybrid is com posed of a DynamEQ® II Wide Dynamic Range Compression signal

SMD 5730

Abstract: HCPL-5701 5730 smd SMD LED 5730 led smd 5730 5962-8978501PX smd 5730 led HCPL5701 HCPL-5730 om SMD CODE MARKING
Contextual Info: W haì HEWLETT mL'tiM PACKARD Low Input Current, High Gain, Hermetically Sealed Optocoupler 8-pin Dual In-Line Package HCPL-5700 HCPL-5701 883B 5962-8981001PX HCPL-5730 HCPL-5731 (883B) 5962-8978501PX 20 Term inal Leadless Chip C a rrier HCPL-8730 HCPL-8731 (883B)

Contextual Info: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The