9 NA STR 2005 Search Results

LS7566R-TS

Abstract: 7566R-122205-1 A3800 LS7566R ls7566rts
Contextual Info: LSI/CSI UL LS7566R LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 December 2005 24-BIT x 4-AXES QUADRATURE COUNTER REGISTER DESCRIPTION: Following is a list of the hardware registers. There are four

LS7566

Abstract: A3800 MC68HC000
Contextual Info: LSI/CSI UL LS7566 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 July 2005 24-BIT FOUR-AXES QUADRATURE COUNTER RS2 1 RS1 2 RS0 3 46 x1FLGa CHS1 4 45 INT/ CHS0 5 44 NC NC 6 43 GND NC 7 42 x1FLGb

Contextual Info: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

Contextual Info: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

ixf55n50

Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Contextual Info: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions

lcd 8X32

Abstract: QFP52 V6116 V6116V60TBA-3041 V6116V6WP11E V6116V6WP27E
Contextual Info: R EM MICROELECTRONIC - MARIN SA V6116 Digitally Programmable 2, 4 and 8 Mux LCD Driver Description The V6116 is a universal low multiplex LCD driver. The 2, 4 and 8 way multiplex is digitally programmable by the command byte. The display refresh is handled on chip via

dc37 cutout

Contextual Info: ' ON 5-ñ B DATE JK iSc REV. 8 Z 0 E 0 LPS 2 QN I'M Vüg ^#JlB 13 . O c t . 2005 N PIN ANOTE4 0T I NS E R T t ° > -r > DON W. H ft & DESCRIPTION NO. ADD 058374 m 1 $APPD. M aCHK.% DR. N0TE4 u AP P D . A-. kJ ouS V Y.TAKAGI Zgg0& A E 4 VERSI ON D E S I G NA T I O N

VID125-12P1

Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1

ECO-TOP

Abstract: DWLP55-12
Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/12* Preliminary Data Sheet S15 R15 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK

Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline

Contextual Info: ECO-TOPTM 1 IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/12* Short Circuit SOA Capability Square RBSOA 33 A 1200 V 3.1 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 Symbol Conditions VCES TVJ = 25°C to 150°C

POWERSEM

Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 50/06* Preliminary Data Sheet 48 A 600 V 2.3 V S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff A15 A7 A9 G15 V12 V13 N15 V9 V10

PSBI 9

Abstract: IFAV25
Contextual Info: ECO-PACTM 1 Rectifier Module for Power Factor Correction PSBI 9/06 IFAV25 VRRM IC25 VCES Preliminary Data Sheet = 15A = 1200 V = 37A = 600 V Fast Single Phase Rectifier Ultra Fast Boost Chopper Typical Rectified Mains Power Pn = 900 W at Vn = 110 V Pn = 2100 W at Vn = 240 V

data sheet str 6753

Abstract: STR 6753 NPC-1220 Setra System SILICONIX Si9801 STR G 6753 7805 Packaged TO-92 FPM-120PG LTC1407A-1 SR 7231
Contextual Info: 06.2005 Industrial Signal Chain High Performance Analog ICs Industrial systems demand semiconductors that are precise, flexible and reliable. Linear Technology offers a broad line of high performance analog ICs that simplify system design with rugged devices featuring

BB182B

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB182B VHF variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • High linearity • Low series resistance. The BB182B is a planar technology

BB145

Abstract: DIODE Sp marking code BP317 943 vco st smd diode marking code str 4090
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 VCO variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145 is a planar technology

st smd diode marking code

Abstract: Philips MARKING CODE marking CODE R SMD DIODE philips 23 BB187 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB187 VHF variable capacitance diode Product specification Supersedes data of 1999 Sep 15 1999 Oct 19 Philips Semiconductors Product specification FEATURES DESCRIPTION • High linearity • Low series resistance.

LP2996

Abstract: LP2996M LP2996MX LP2996LQ LP2996LQX LP2996MR LP2996MRX M08A
Contextual Info: General Description Features The LP2996 linear regulator is designed to meet the JEDEC SSTL-2 specifications for termination of DDR-SDRAM. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5A continuous current

BB145

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145 Low-voltage variable capacitance diode Product specification Supersedes data of 1999 Sep 15 1999 Dec 15 Philips Semiconductors Product specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145 is a planar technology

"marking code X"

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB187 VHF variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • High linearity • Low series resistance. The BB187 is a planar technology

LP2996

Abstract: LP2996MX LP2996LQ LP2996LQX LP2996M LP2996MR LP2996MRX M08A
Contextual Info: General Description Features The LP2996 linear regulator is designed to meet the JEDEC SSTL-2 specifications for termination of DDR-SDRAM. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5A continuous current

"Z3M"

Abstract: Z3M g MIL-202F-201A PENI Z3M Y 3m 3903
Contextual Info: JNPS-0891‐A, PD-0055 製品仕様書 Product Specification ３Ｍ 印 Power Clamp ﾎﾞｰﾄﾞﾏｳﾝﾄ ﾍｯﾀﾞｰ ｽﾄﾚｰﾄﾀｲﾌﾟ 356XX-6XXX-X00 PE 3M Power Clamp Board Mount Header Straight Type 356XX-6XXX-X00 PE APRV. T.Shimizu

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jan 26 2001 Jul 13 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350D FEATURES QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jan 26 2001 Jul 13 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA