9 LHA MARKING Search Results

NCV663SQ18T1G

Abstract: basic ac motor reverse forward electrical diagram 419C NCP662 NCP663 NCV662 NCV663 SC82 9 lha marking
Contextual Info: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low−Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series

Contextual Info: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator http://onsemi.com This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series

Contextual Info: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low−Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series

NCP662

Abstract: NCP663 419C NCV662 NCV663 SC82
Contextual Info: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator http://onsemi.com This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series

Contextual Info: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S

Contextual Info: FINAL CO M 'Li-7/10/12/15 IND:-10/12/15/20 MACH5-512/MACH5LV-512 V A N T I S COMP ANY M A C H 5 -5 1 2/1 2 0 -7 /1 0/1 2/1 5 M A C H 5 -5 1 2/160-7/10/12/1 5 M A C H 5 -5 1 2/184-7/10/12/1 5 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 M A C H 5 -5 1 2/256-7/10/12/1 5

Fuji Electric SM

Contextual Info: This maiertaland he Information herein Is Ihe properly of Fuji Electric Co .Ltd. They shall be neither («produced, copiée tent, or disclosed in any way whatsoever for ihe use of any third partidor used for ihe manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.

Contextual Info: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series

HD63463

Abstract: HD63463P8 SMD SL HD63463-8 SMD MARKING CODE 4E sad1 smd HD63463CP8 ST412 120 SMD HARD DISK CONTROLLER BTM marking
Contextual Info: H D63463-H ard D isk C o n tro lle r H D C DESCRIPTION The HD63463 (HDC: Hard Disk Controller) is a CMOS device developed for use as a peripheral LSI for the 16-bit microprocessor HD68000 (MPU: Microprocessing Unit). The HDC connects the host system and the Winchester type hard

Contextual Info: AUSTIN SEMICONDUCTOR, INC. SRAM 8K MT59 6428JL8.3£ 8 K x 8 SRAM X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-38294, Class M • MIL-STD-883, Class B • Radiation tolerant consult factory FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention

H04-004-06

Abstract: fuji electric year month dc ampmeter Circuits 1000H H04-004 capacitor variator E66188 MS5K2564
Contextual Info: Re vised Re c o r d s Fuji Electric CaJJd. . — •— —i- - DW GJfO. | í si i M S5K 2 5 6 4 2/6 H04-004-06 X 1. SCOPE T h i s s p e c i f i c a t i o n p r o v i d e s t h e r a t i n g s and t e s t r e q u i r e m e n t s f o r FUJ

mdd 1051

Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
Contextual Info: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY

Contextual Info: — MT5C6401 883C 64K x 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86015 • M IL-STD-883, Class B • Radiation tolerant (consult factory) 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns

Contextual Info: MT5C128K8A1 RE VO LU T IO NA RY PINOUT 128K x 8 SRAM M IC R O N SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • Automatic CE power down

12T67

Abstract: bb2412 ipip3 T350 MARKING MHT siemens 1q B82412-A3100-M MMIC marking CODE cf fgmd d794
Contextual Info: GaAs MMIC SIEMENS P r e lim in a r y CMY 95 d a t a * G aAs mixer with integrated IF-amplifierer fo r mobile com m unication ‘ Frequency range 0.8 GHz to 2.5 GHz ‘ Very low power consumption 1mA lyp. * G ood intermodulatfon perform ance * Single positive supply voltage

B2520

Abstract: 6c223
Contextual Info: /— > / - \ \ l S I I N S I MI C O N D I C l O K . INC SRAM M T 5 C 6 4 0 5 883C 16K X 4 S R A M 16K X 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNM ENT Top View • SMD 5962-86859 • MIL-STD-883, Class B • Radiation tolerant (consult factory)

Contextual Info: '\ A U S T I N S E M I C O N D U C T O R , I NC. MT5C2561 883C 256K x 1 SRAM ^ SRAM 256K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-88725,-88544 • M IL-STD -883, Class B • Radiation tolerant (consult factory)

5 PEN PC TECHNOLOGY advance

Contextual Info: ADVANCE M IC R O N 16 MEG X MT9D169 9 DRAM M OD ULE 16 MEG x 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 30-pin single-in-line package • High-performance, CM OS silicon-gate process • Single 5V ±10% power supply

HA 1156 R

Abstract: MT5C2568DJ-20IT
Contextual Info: MICRON SEMICONDUCTOR INC b? E D WË blllSMT OOD'íBSG 0 5 4 • MT5C2568 32K X 8 SRAM I^IIC R O N SRAM 32K X 8 SRAM • High speed: 1 0 ,12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

micron DRAM

Contextual Info: MT8D88C132H S , MT16D88C232H(S) 4MB, 8MB DRAM CARDS MICRON I TbCHNOLCOY INC. DRAM MINICARD 4, 8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access

T2D48

Abstract: FPM DRAM 30-pin SIMM 0/MT2D48
Contextual Info: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE ¡V U C F O N DRAM MODULE IV IU U U L t. 4 MEG x 8 4 MEG ABYTE -5VFAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM O S silicon-gate process

T3D19

Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
Contextual Info: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process

Contextual Info: MICRON SEMICONDUCTOR INC b3E J> 512K X • b 1 1 1 5 4‘i 0000021 bl3 ■ U R N MT16D T 51232 32, 1 MEG x 16 DRAM MODULE 512 K x 32,1 MEG X 16 DRAM MODULE FAST-PAGE-MODE (MT16D(T)51232) LOW POWER, EXTENDED REFRESH (MT16D(T)51232 L) FEATURES PIN ASSIGNMENT (Top View)

SE236

Contextual Info: M I CR ON S E M I C O N D U C T O R INC b7E D • b l l l S H T GQ0'ì37lì D7T H M R N ADVANCE MT5C512K8B2 512K X 8 SRAM M IC R SO N I FHCONfVICTOn INC SRAM 512Kx 8 SRAM FEATURES • High speed: 12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal