8N-5 Search Results
8N-5 Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
8N50A
|
AK Semiconductor | 8A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.63 ohm at 10V gate-source voltage, available in TO-220AB, TO-220F, TO-263, TO-252, and TO-251 packages. | Original | ||||
SLF18N50C
|
Maplesemi | 500V N-channel MOSFET with 18A continuous drain current, 212mΩ typical RDS(on) at VGS = 10V, low gate charge of 87nC, and fast switching performance in TO-220F package. | Original | ||||
JMPC18N50BJ
|
Jiangsu JieJie Microelectronics Co Ltd | 500V, 18A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.36 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. | Original | ||||
SLP_F18N50S
|
Maplesemi | 500V N-channel MOSFET with 18A continuous drain current, 225mΩ on-resistance at VGS=10V, low gate charge of 38nC, and 6.6pF Crss, suitable for high-efficiency power conversion applications. | Original | ||||
JMPF18N50BJ
|
Jiangsu JieJie Microelectronics Co Ltd | 500V, 18A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.36 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package. | Original | ||||
28N50A
|
AK Semiconductor | 28A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.14 ohm at VGS = 10V, low gate charge, and high dv/dt capability, available in TO-247 and TO-247S packages. | Original | ||||
18N50A
|
AK Semiconductor | 18A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.25 ohm at VGS = 10V, available in TO-220F, TO-247 and TO-247S packages, featuring high dv/dt capability and 100% avalanche tested performance. | Original | ||||
SL18N50F
|
SLKOR | 18.0A, 500V, RDS(on)=0.25Ω@VGS=10V, Low Gate Charge, Fast Switching, 100% Avalanche Tested, Improved dv/dt. | Original |
8N-5 Price and Stock
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onsemi FDA28N50Power MOSFET, N Channel, 500 V, 28 A, 0.122 ohm, TO-3PN, Through Hole - Rail/Tube (Alt: FDA28N50) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDA28N50 | Tube | 7,200 | 15 Weeks | 450 |
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FDA28N50 | 74 | 1 |
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FDA28N50 | 16 Weeks | 30 |
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FDA28N50 | 390 |
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FDA28N50 | 597 | 1 |
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onsemi FDP18N50Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220, Through Hole - Rail/Tube (Alt: FDP18N50) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP18N50 | Tube | 2,350 | 15 Weeks | 50 |
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FDP18N50 | Bulk | 3,057 | 1 |
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FDP18N50 | 3,229 | 1 |
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FDP18N50 | 842 | 1 |
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FDP18N50 | 20 Weeks | 1,000 |
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FDP18N50 | 800 | 16 Weeks | 50 |
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FDP18N50 | 50 | 17 Weeks | 50 |
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FDP18N50 | 3 | 1 |
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onsemi FDPF18N50Power MOSFET, N-Channel, UniFETTM, 500 V, 18 A, 265 m?, TO-220F - Rail/Tube (Alt: FDPF18N50) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF18N50 | Tube | 2,000 | 20 Weeks | 50 |
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FDPF18N50 | 11,963 | 1 |
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FDPF18N50 | 5 | 1 |
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FDPF18N50 | 12 Weeks | 1,000 |
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FDPF18N50 | 900 | 21 Weeks | 50 |
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FDPF18N50 | 22 Weeks | 50 |
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Infineon Technologies AG IPT012N08N5ATMA1- Tape and Reel (Alt: IPT012N08N5ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPT012N08N5ATMA1 | Tape & Reel | 2,000 | 16 Weeks | 2,000 |
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IPT012N08N5ATMA1 | 16,239 |
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IPT012N08N5ATMA1 | 1,969 |
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IPT012N08N5ATMA1 | 349 |
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IPT012N08N5ATMA1 | 17 Weeks | 2,000 |
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IPT012N08N5ATMA1 | 35,790 |
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NIC Components Corp NIN-SK8N5JTR1500FULTRA HIGH PERFORMANCE WIREWOUND RF CHIP INDUCTOR - Tape and Reel |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NIN-SK8N5JTR1500F | Tape & Reel | 14 Weeks | 10,000 |
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Get Quote | |||||