8N50A
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AK Semiconductor
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8A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.63 ohm at 10V gate-source voltage, available in TO-220AB, TO-220F, TO-263, TO-252, and TO-251 packages. |
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SLF18N50C
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Maplesemi
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500V N-channel MOSFET with 18A continuous drain current, 212mΩ typical RDS(on) at VGS = 10V, low gate charge of 87nC, and fast switching performance in TO-220F package. |
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JMPF18N50BJ
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Jiangsu JieJie Microelectronics Co Ltd
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500V, 18A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.36 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package. |
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SLP_F18N50S
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Maplesemi
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500V N-channel MOSFET with 18A continuous drain current, 225mΩ on-resistance at VGS=10V, low gate charge of 38nC, and 6.6pF Crss, suitable for high-efficiency power conversion applications. |
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28N50A
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AK Semiconductor
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28A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.14 ohm at VGS = 10V, low gate charge, and high dv/dt capability, available in TO-247 and TO-247S packages. |
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JMPC18N50BJ
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Jiangsu JieJie Microelectronics Co Ltd
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500V, 18A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.36 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. |
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SL18N50F
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SLKOR
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18.0A, 500V, RDS(on)=0.25Ω@VGS=10V, Low Gate Charge, Fast Switching, 100% Avalanche Tested, Improved dv/dt. |
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18N50A
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AK Semiconductor
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18A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.25 ohm at VGS = 10V, available in TO-220F, TO-247 and TO-247S packages, featuring high dv/dt capability and 100% avalanche tested performance. |
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8N50A
