8J MARKING Search Results

marking 8J

Abstract: MMBZ5234B 8J sot 23
Contextual Info: SEMICONDUCTOR MMBZ5234B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8J No. 1 Item Marking Device Mark 8J MMBZ5234B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

KIA78L*F

Abstract: 8J marking marking 8j sot-89 marking 8J KIA78L18F sot-89 MARKING SPECIFICATION SOT-89 marking 314
Contextual Info: SEMICONDUCTOR KIA78L18F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 J 1 314 2. Marking 2 Item Marking Description Device Mark 8J KIA78L18F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.

9926C

Abstract: IPI037N06L3 s4si IPP037N06L3 G
Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(

IPB230N06L3

Abstract: IPP230N06L3 G s4si
Contextual Info: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

606G

Abstract: 603G FR601G FR607G diagram fr 310
Contextual Info: E SEMICONDUCTOR FR601G -F R 6 0 7 G T A IW A N 6.0 AM PS. G iass Passivated Fast Recovery Rectifiers RoHS R-6 C O M P L IA N C E f .2ÆD¡721 .27i>:$.8j •53* M IN HA. I r F ea tu re s ^ ❖ 4 ^ ■> Low forward voltage drop High current capability High reliability

marking xd diode

Abstract: e866 marking 8fc marking J6c s4si
Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K 0&) Z" -( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

TMPZ5254

Contextual Info: NER DIO DE SOT-23/TO -236AB ‘TMPZ’ ZENER DIO DES ELECTRICAL CHARACTERISTICS at T A. = 25°C Zener Voltage Device Min. Nom. Max. Leakage Current Zener Impedance Max @VR Max. ZCT Marking V (V) (V) @'zr (mA) (HA) (V) (Q) @'zr (mA) Pinning Type TMPZ5230

sot23 transistor marking y2

Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0

marking Z2

Abstract: BZX84C5V1 BZX84C5V6
Contextual Info: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)

MMBZ5228B

Abstract: TMPZ5234B MMBZ52 MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B TMPZ5229B TMPZ5230B MMBZ5232B
Contextual Info: JGD MMBZ52 - SERIES O SURFACE MOUNT ZENER DIODES/SOT - 23 350mW CrossReference Dynamic Test Test Nominal Dynamic Imped. Current Current Imped. Zen.Vltg. Marking / i_ + @lzk W XZx @ Izt Code a Part No. MMBZ5226B Vz V TMPZ5226B Zzt(Q ) lzt( mA) Zzk(Q) lzk( mA)

TMPZ5231

Abstract: MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B
Contextual Info: CE MMBZ52-SERIES CHENYI ELECTRONICS 350mW SURFACE MOUNT ZENER DIODES Nominal Cross- Marking Zen.V1tg @Izt Dynamic Test Dynamic Test Revrese Test Imped. Current Imped. Current Current Voltage Package Reel Part No. Reference Code Ir uA Vr(V) MMBZ5226B TMPZ5226B

marking 81E

Abstract: TMPZ5231 Zener diode 81A marking 8C marking 8G mmbz52 MMBZ5227B 8B MMBZ5226B MMBZ5227B MMBZ5228B
Contextual Info: SURFACE MOUNT ZENER DIODES MMBZ52-SERIES 350mW Part No. Nominal Dynamic Test Dynamic Test Reverse Test Current Imped. Current Current Voltage Package Ir µA Vr(V) Reel Cross- Marking Zen.Vltg. Imped. Reference Code @ Izt @ Izt Vz(V) Zzt(Ω) @ Izk Izt(mA)

Marking 18A

Abstract: MARKING 8S SOT-23
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C

Zener sot marking 162

Abstract: marking 8D SOT 89 marking 81t marking 81J
Contextual Info: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232

Contextual Info: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B

LDTC143EWT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC143EWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an

5251B

Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B

ZENER DIODES SOT-23

Abstract: marking 18j sot23 MARKING 8S SOT-23
Contextual Info: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28

PZ5252

Contextual Info: ZENER DIO DES ,3 S O T -2 3 /T O -2 3 6 A B 2' ‘TMPZ’ ZENER DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C Zener Voltage Min. Norn. Max. Leakage Current Zener Im pedance @VR Max. Z z t "rr @ 'Z T Max Type Marking V (V) (V) (mA) (^A) (V) (Si) (mA)

Contextual Info: ZENER DIODES SO T-2 3 /T O -2 3 6 AB ‘TMPZ’ ZENER DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C Zener Voltage Device Min. Norn. Max. Leakage Current Zener Im pedance @ >ZT Max Marking V (V) (V) (mA) (HA) (V) (£ 2 ) @ 'zr (mA) Pinning Type TMPZ5229

TMPZ5231

Abstract: zener y11 TMPZ5229 TMPZ5230 TMPZ5232 TMPZ5233 TMPZ5234 TMPZ5235 TMPZ5236 TMPZ5237
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • 050433A GGDbBTB b?S ■ ALGR ZENER DIODES ‘TM PZ’ ZE N E R D IO D E S ELEC T R IC A L CHARACTERISTICS a t T A. = 25°C Zener Voltage Leakage Current Min. Nom. Max. Z ZT @ 'Z T V (V) Max (HA) @ VR Marking Max. (V) (V)

zener diode 4.7V

Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Contextual Info: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3