8A SF DIODE Search Results
8A SF DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
|
Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
|
Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ24V |
|
Zener Diode, 24 V, USC | Datasheet | ||
| CUZ20V |
|
Zener Diode, 20 V, USC | Datasheet | ||
| CEZ5V6 |
|
Zener Diode, 5.6 V, ESC | Datasheet |
8A SF DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance |
OCR Scan |
140gr Minu00 | |
weidmuller eg 01
Abstract: SB-S11-P1-01-1-1A ess20-124 ESS20-1 DIN Rail Terminal Blocks DIODE MOD E67320 1-24DC din 46244-A6.3-0.8 DIN IEC 60068-2-11 k potential
|
Original |
ESS20-1. 17plus, ESS20-124 17-P10-Si 10-way) weidmuller eg 01 SB-S11-P1-01-1-1A ESS20-1 DIN Rail Terminal Blocks DIODE MOD E67320 1-24DC din 46244-A6.3-0.8 DIN IEC 60068-2-11 k potential | |
MC33186DH1
Abstract: MC33887 44QFN HSOP20 motorola automotive power transistor 44-QFN MC33186DH motorola 747
|
Original |
MC33887/D MC33887 MC33887 MC33186DH1 HSOP20 120mW 225mW 44QFN motorola automotive power transistor 44-QFN MC33186DH motorola 747 | |
7A SF SC 30
Abstract: ESX10-103 uP 6308 AD ESX10 SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30
|
Original |
ESX10 ESX10 7A SF SC 30 ESX10-103 uP 6308 AD SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30 | |
SF126
Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
|
OCR Scan |
||
HSOP20
Abstract: MC33186DH1 sf transistor 8A SF diode MC33186 motorola automotive transistor MC33186 application note
|
Original |
MC33186 150mW HSOP20 MC33186DH1 sf transistor 8A SF diode MC33186 motorola automotive transistor MC33186 application note | |
HSOP20
Abstract: HSOP-20 MC33186 MC33186DH1R2
|
Original |
MC33186 51A-03 HSOP-20 HSOP20 HSOP-20 MC33186 MC33186DH1R2 | |
AD-TX-EM01
Abstract: ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367
|
Original |
ESX10-T ESX10-T ESX10-T. AD-TX-EM01 AD-TXEM01 AD-TX-EM01 ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367 | |
T0254AA
Abstract: T0257AA
|
OCR Scan |
000301S T0257AA SM1S41 SM1S01 T0258AA FT0258AA HDS100 T0254AA | |
HSOP20
Abstract: 7A SF 160 e7 MC33186 application note MC33186 MC33186DH1R2
|
Original |
MC33186 51A-03 HSOP-20 HSOP20 7A SF 160 e7 MC33186 application note MC33186 MC33186DH1R2 | |
|
Contextual Info: ESAC33IC. N . D |8 ai FAST RECOVERY DIODE : Features H ig h vo lta g e by m esa d e s ig n . • K i t *Stt H igh re lia b ility i m m * Connection Diagram • ^ ì é ^ A pplications • a * * a *-f ESAC33-DDC o - ►] 9 1 ESAC33-nnN d ^ ^ -N - |
OCR Scan |
ESAC33IC. ESAC33-DDC ESAC33-nnN ESAC33-nDD kegTS30 IZaTS30S3^ S30S3^ l95t/R89 | |
f11u
Abstract: 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267
|
OCR Scan |
2SK1916-01R f11u 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267 | |
AD-TX-EM01
Abstract: ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549
|
Original |
ESX10-T ESX10-T. AD-TX-EM01 AD-TXEM01 4/12-LIT0806E AD-TX-EM01 ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549 | |
ESX10-TA-100
Abstract: dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars
|
Original |
ESX10-T LIT0806 ESX10-TA-100 dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars | |
|
|
|||
|
Contextual Info: 4855452 INTERNATIONAL RE C T IFIER IO R 02E 07870 □007Û7D 7 ^ ô3-c£l Data Sheet No. INTERNATIONAL RECTIFIER MfiSSq5E D p d - z .u 99 |~ R18CF, R18SF, R18CFR AND R18SFR SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 90 AMP AVG STUD MOUNTED SOFT FAST RECOVERY RECTIFIER DIODES |
OCR Scan |
R18CF, R18SF, R18CFR R18SFR D0-205AC DO-30) D0-205AA R18CF R18SF | |
L04AContextual Info: 2SK2654-01 FU JI N-channel MOS-FET FAP-IIS Series 900V > Features - 2Q TO-3P 4.5 M Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - 150W > Outline Drawing High Speed Switching Low On-Resistance |
OCR Scan |
2SK2654-01 Vcc-90V; L04A | |
2SK2124Contextual Info: Panasonic Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 130mJ • V gss=±30V guaranteed • High-speed switching : t|= 60ns • No secondary breakdown ■ Applications • Non-contact relay |
OCR Scan |
2SK2124 130mJ -220E 2SK2124 | |
CIRCUIT BREAKER AEG me 800
Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
|
Original |
||
|
Contextual Info: TOSHIBA -CDISCRETE/OPTO> TD 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA SEMICONDUCTOR » F | ciDci 7 S S D 90D : 16371 D O lt.371 D TOSHIBA GTR MODULE MG8D6EM1 TECHNICAL DATA 'SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. |
OCR Scan |
180gr | |
|
Contextual Info: s e MIKROn SKiiP 82 ANB 08 Absolute Maximum Ratings Sym bol C o n d it i o n s 1 V a lu e s U n its 800 35 700 2800 V B ridge Rectifier V rrm Theatsink — 80 °C tp = 10 ms; sin. 180 tp = 10 ms; sin. 180 Id If s m l2t T, = 25 °C Tj = 25 °C A A A 2s MiniSKiiP 8 |
OCR Scan |
||
|
Contextual Info: SFAF8G 8.0 Amp. Glass Passivated Ultrafast Recovery Rectifier Current 8.0 A Voltage 200 to 600 V ITO-220AC FEATURES Ultrafast recovery time for high efficiency Low power losses Low forward voltage drop High forward surge current capability |
Original |
ITO-220AC 2011/65/EU 2002/96/EC J-STD-020, ITO-220AC. MIL-STD-750 J-STD-002 JESD22-B102. Oct-12 | |
|
Contextual Info: TOSHIBA 2SK2542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2542 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS 10.3MAX. g3.6 ±0.2 4V Gate Drive Low Drain-Sorce ON Resistance : RDS(ON = 0-75ß (Typ.) |
OCR Scan |
2SK2542 20kfi) | |
2f3 transistorContextual Info: T O S H IB A 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance |
OCR Scan |
2SK2847 100//A 2f3 transistor | |
|
Contextual Info: LTC3822-1 No RSENSETM, Low Input Voltage, Synchronous Step-Down DC/DC Controller DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual N-Channel MOSFET Synchronous Drive No Current Sense Resistor Required Optimized for 3.3VIN and Li-Ion Applications |
Original |
LTC3822-1 250kHz 750kHz 10-Lead LTC3830 500kHz, SSOP-16 LTC3836 28-Lead 38221f | |