8A SF Search Results

Contextual Info: M32C/8A Group M32C/8A SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER 1. REJ03B0213-0100 Rev.1.00 Apr 01, 2007 Overview 1.1 Features The M32C/8A Group (M32C/8A) is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group (M32C/8A) is housed in 100pin plastic molded LQFP package.

Contextual Info: M32C/8A Group RENESAS MCU 1. REJ03B0213-0111 Rev.1.11 Mar 31, 2009 Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin

M308A0SGP

Abstract: TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U
Contextual Info: M32C/8A Group REJ03B0213-0110 Rev.1.10 Jul 15, 2007 RENESAS MCU 1. Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin

G120

Abstract: SUR805 SUR810 SUR815 SUR820 H139 1/ZNR vfm 820
Contextual Info: SEMTECH CORP SflE ]> • filarial Q0034MS 553 « S E T SUR805 SUR810 SUR820 ULTRAFAST RECOVERY_ ULTRA-FAST 8A RECTIFIER QUICK REFERENCE DATA * Vr = 50 - 200V If = 8A trr = 35ns • Very low reverse recovery time Low forward voltage drop Soft recovery characteristics

Contextual Info: 128M Synchronous DRAM SDRAM Rev. 0.60E Oct. '98 Prelim inary MITSUBISHI LSIs 1 M2V28S20TP-7,-8A,-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 (4-BANK X 8,388,608-W O RDX 4-BIT) (4-BANK X 4,194,304-W O RDX (4 -b a n k x 2 ,097,1 5 2 - w o r d x 8-BIT)

M308A0SGP

Abstract: M308A M308A3SGP M308A5SGP PLQP0100KB-A PLQP0144KA-A
Contextual Info: APPLICATION NOTE M32C/8A Group Program Download Function 1. Abstract This document describes methods of downloading a user program into the internal RAM area in M32C/8A using the program download function and executing the downloaded user program in internal RAM.

Contextual Info: ALPHA SEMICONDUCTOR 1Accllcncc in Analog Power Products AS2880 8A Low DropOut Voltage Regulator Adjustable &Fixed 3.3V FEATURES • • • • • • • Adjustable Output Down to 1.2V or Fixed 3.3V Output Current of 8A Low Dropout Voltage Extremely Tight Load and Line Regulation

gate drive circuit for power MOSFET IRF740

Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
Contextual Info: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

irf840

Abstract: IRF841
Contextual Info: iH A R R is SEMIC0NDUCT0R IRF840, IRF841, IRF842, IRF843 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF521

Abstract: IRF520 irf523 F521 irf522
Contextual Info: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

irf440

Contextual Info: h a IRF440, IRF441, //ÎF 4 4 2 IRF443 r r i s semi conduct or 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: 128M Synchronous D RA M SDRAM Rev. 0.60E Oct. '98 M2V28S20TP-7,-8Al-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 Preliminary M ITSUBISHI LS Is PRELIM INARY (4-BANK X 8,388,608-WORD x 4-BIT) (4-BANK X 4,194,304-WORD x 8-BIT) (4-BANKx 2,097,152-WORD x 16-BIT)

B47PP

Abstract: 6F20 8A SF
Contextual Info: Diodes Internationa! IQ R Rectifier VfM @ JtX Part Number VRR* V >FAV@t C (A) (C) IfSM 'F(AV) 50 Hi (V) (A) 60Hz RQK(DC) (A) (°C/W) Notes Fax on Demand Number Cose Outline Key Standard Recovery B-47PP 8A F05N PP 8A F1N PP 50 50 150 1.45 600 628 0.6 100

f8gz47

Abstract: F8JZ47 SF8JZ47 SF8GZ47
Contextual Info: SF8GZ47, SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47, SF8JZ47 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V, 600V : VRRM = 400V, 600V Average On−State Current : IT AV = 8A

Contextual Info: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,

marking code 8A

Abstract: SF8A400H
Contextual Info: SF8A400H Ultrafast Recovery Rectifier 400V, 8A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode

freewheeling diode application note

Abstract: SF8A600H
Contextual Info: SF8A600H Ultrafast Recovery Rectifier 600V, 8A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode

SF8j41

Abstract: SF8G41 SF8G41A SF8J41A
Contextual Info: SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 8A

SF8G41A

Abstract: SF8J41A
Contextual Info: SF8G41A, SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A, SF8J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 8A

F8JZ47

Abstract: f8gz47 f8gz47 symbol SF8JZ47 SF8GZ47
Contextual Info: SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400, 600V : VRRM = 400, 600V Average On−State Current : IT AV = 8A

TOSHIBA Thyristor

Abstract: SF8G48 SF8J48 USF8G48 USF8J48
Contextual Info: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48,SF8J48,USF8G48,USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM=400,600V Repetitive Peak Reverse Voltage : VRRM=400,600V Average On-State Current : IT AV =8A

SF8L60

Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS SF8L60 Case : FTO-220 Unit : mm 600V 8A FEATURES High Voltage trr70ns Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting

TOSHIBA Thyristor

Abstract: SF8G48 SF8J48 USF8G48 USF8J48
Contextual Info: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage: VDRM=400V,600V Repetitive Peak Reverse Voltage: VRRM=400V,600V Average On-State Current: IT AV =8A

SF8L60

Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS SF8L60 Case : FTO-220 Unit : mm 600V 8A FEATURES High Voltage trr70ns Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting