88-108 RF AMPLIFIER Search Results

blf574

Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract

ATC100B151J

Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

mrf6vp2600h

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

SMA66-1

Contextual Info: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS

Contextual Info: Philips Semiconductors M bbSBTSl ODBOSAb 3b 2 M APX Preliminary specification V H F am p lifie r m odu le B G Y 145A N AMER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E 1> PINNING -S O T183A The BGY145A is a RF amplifier module, designed for use in transmitters of mobile

surface mount transistor A40

Abstract: transistor BC 157
Contextual Info: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n

940 629 MOTOROLA 113

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

5n53

Abstract: AN7213 7s752a fm frontend CDA 10.7MHZ ELQ-5N53 108MHz eif-7s752a 76-108MHz power amplifier 88- 108mhz
Contextual Info: A N 7213 AN7213 FM Front-end Circuit for Radio Unit : mm • Description The AN7213 is a monolithic integrated circuit designed for FM front-end of the portable radio. 6.0 6.0 1 1 . ■ Features • • • Built-in RF amplifier, frequency converter, local

Contextual Info: Available as: RF AMPLIFIER MODEL TM5103 TM5103, 4 Pin TO-8 T4 TN5103, 4 Pin Surface Mount (SM3) FP5103, 4 Pin Flatpack (FP4) BX5103, Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C * High Third Order Intercept: +36 dBm Typical

BX5103

Abstract: FP5103 TM5103 TN5103
Contextual Info: RF AMPLIFIER MODEL TM5103 Available as: TM5103, 4 Pin TO-8 T4 TN5103, 4 Pin Surface Mount (SM3) FP5103, 4 Pin Flatpack (FP4) BX5103, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point. +51 dBm (Typ.)

BC 3205 transistor

Abstract: TRANSISTOR BC 3205 BC 187 TRANSISTOR WJ-CA38-1 TRANSISTOR BC 174 D 92 M WJ-A38 CA381 transistor bc 248 SMA38-1
Contextual Info: WJ-A38-1 /SMA38-1 A 3 8 -1 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +18 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10 - 2000 MHz -m m _ S n -"« v i ^ i W* *1b*t*-a-

CLX32

Abstract: CLX32-00 CLX32-05 CLX32-10 VDG13
Contextual Info: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • • Low thermal resistance for high voltage application

Contextual Info: FM300-50BLF-ROHS FM300-50BLF is a compact power amplifier on an 8mm aluminium base for use in FM broadcast electronics. Features: • • • • • • • • Designed for stability and long term reliability. 24/7 Easy mounting on heat sink by 4 screws.

INA-51063

Abstract: INA51063 INA-51063-BLK INA-51063-TR1 marking 47 gain block sot-363 2.45 Ghz power amplifier 30 db
Contextual Info: 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications Description Pin Connections and Package Marking

marking 47 gain block sot-363

Abstract: surface mount operation amplifier 313 HP MMIC INA sc-70 package pcb layout INA51063 INA-51063 INA-51063-BLK INA-51063-TR1 INA-51063 equivalent smt 51063
Contextual Info: 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications Pin Connections and Package Marking

302203

Abstract: diode 1321 TGA8310 TGA8310-SCC
Contextual Info: T R I Q U I N T S E M I TGA8310-SCC C O N D U C Low-Noise Amplifier ● ● ● ● ● ● 2 to 20- GHz Frequency Range T O R , I N C . 8310 3.5- dB Noise Figur e Midband 1.4:1 Typical Input/Output SWR 17.5- dBm Output Power at 1- dB Gain Compr ession 9- dB Typical Gain

Contextual Info: T R I Q U I N T S E M I C TGA8035-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 6 to 18- GHz Frequency Range T O R , I N C . 8035 13- dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5- dBm Typical Output Power at 1 -dB Gain Compression 5 - dB Typical Noise Figure

saa 1094

Abstract: marking 47 gain block sot-363 INA-S1063 part marking ab sc-70 04b6
Contextual Info: ASSI PHAECWKLAERTDT 9 n a 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-S1063 Features • Ultra-Miniature Package Surface Mount SOT-363 SC-70 Package • Internally Biased, Single 5 V Supply (1 2 mA) • 2 0 .5 dB Gain • SdBNF • Unconditionally Stable

AS4321

Abstract: MGFC45B3436B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic

TGA8061-SCC

Abstract: RF wafer
Contextual Info: Product Data Sheet April 16, 2001 .1 - 3.5 GHz Low Noise Amplifier TGA8061-SCC Key Features and Performance • • • • • • • 100 MHz to 3.5 GHz Frequency Range 3 dB Bandwidth Exceeds 5 Octaves 2.4 dB Noise Figure with Low Input and Output SWR 18 dB Gain

PRF10

Abstract: MBC13916 MBC13916T1 MRFIC0916 937 motorola 0933 34 motorola zc 527
Contextual Info: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is

Contextual Info: Wfinl H EW LETT m L rJk PACKARD 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications • Amplifier for Cellular,

Contextual Info: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is