88-108 RF AMPLIFIER Search Results

4cx20000d-9015

Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
Contextual Info: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The

blf578

Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
Contextual Info: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power

blf574

Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract

940 629 MOTOROLA 220

Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

gw 6203

Abstract: AU-1291 MITEQ
Contextual Info: MITEQ AU-1291 AMPLIFIER FREQUENCY MHz 0.01–500 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AU-1291 60 0.75 2.0:1 50/50 1.4 10 66 14 65 13 95 4 12 63 P1dB 62 61 11 10 60 9

ATC100B151J

Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

mrf6vp2600h

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

SMA66-1

Contextual Info: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS

BGY133

Abstract: 65ZS 88-108 rf amplifier BGY132 vhf power module
Contextual Info: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element

BGY33

Abstract: "Amplifier Modules" Philips bgy32 Philips BGY36 VHF Power amplifier Module philips rf power amplifier module BGY32 BGY35 88-108 rf amplifier an power 88-108 mhz BGY36
Contextual Info: N AMER PHILIPS/DISCRETE • bRE » BGY32 BGY33 BGY35 BGY36 bb53T31 003Q211 4b7 H A P X VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 £2 load.

Contextual Info: Philips Semiconductors M bbSBTSl ODBOSAb 3b 2 M APX Preliminary specification V H F am p lifie r m odu le B G Y 145A N AMER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E 1> PINNING -S O T183A The BGY145A is a RF amplifier module, designed for use in transmitters of mobile

surface mount transistor A40

Abstract: transistor BC 157
Contextual Info: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n

940 629 MOTOROLA 113

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

Contextual Info: Available as: RF AMPLIFIER MODEL TM5103 TM5103, 4 Pin TO-8 T4 TN5103, 4 Pin Surface Mount (SM3) FP5103, 4 Pin Flatpack (FP4) BX5103, Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C * High Third Order Intercept: +36 dBm Typical

BX5103

Abstract: FP5103 TM5103 TN5103
Contextual Info: RF AMPLIFIER MODEL TM5103 Available as: TM5103, 4 Pin TO-8 T4 TN5103, 4 Pin Surface Mount (SM3) FP5103, 4 Pin Flatpack (FP4) BX5103, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point. +51 dBm (Typ.)

BC 3205 transistor

Abstract: TRANSISTOR BC 3205 BC 187 TRANSISTOR WJ-CA38-1 TRANSISTOR BC 174 D 92 M WJ-A38 CA381 transistor bc 248 SMA38-1
Contextual Info: WJ-A38-1 /SMA38-1 A 3 8 -1 10 to 2000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +18 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) WIDE BANDWIDTH: 10 - 2000 MHz -m m _ S n -"« v i ^ i W* *1b*t*-a-

CLX32

Abstract: CLX32-00 CLX32-05 CLX32-10
Contextual Info: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX32

Abstract: CLX32-00 CLX32-05 CLX32-10 VDG13
Contextual Info: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • • Low thermal resistance for high voltage application

Contextual Info: FM300-50BLF-ROHS FM300-50BLF is a compact power amplifier on an 8mm aluminium base for use in FM broadcast electronics. Features: • • • • • • • • Designed for stability and long term reliability. 24/7 Easy mounting on heat sink by 4 screws.

Contextual Info: TGA8061-SCC Low-Noise Amplifier 100-MHz to 3.5-GHz Frequency Range 3-dB Bandwidth Exceeds 5 Octaves 2.4-dB Noise Figure with Low Input and Output SWR 18-dB Gain 15-dBm Output Power at 1-dB Gain Compression Operates from Single 12 V Supply 1,524 x 1,524 x 0,102 mm 0.060 x 0.060 x 0.004 in.

INA-51063

Abstract: INA51063 INA-51063-BLK INA-51063-TR1 marking 47 gain block sot-363 2.45 Ghz power amplifier 30 db
Contextual Info: 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications Description Pin Connections and Package Marking

marking 47 gain block sot-363

Abstract: surface mount operation amplifier 313 HP MMIC INA sc-70 package pcb layout INA51063 INA-51063 INA-51063-BLK INA-51063-TR1 INA-51063 equivalent smt 51063
Contextual Info: 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications Pin Connections and Package Marking

302203

Abstract: diode 1321 TGA8310 TGA8310-SCC
Contextual Info: T R I Q U I N T S E M I TGA8310-SCC C O N D U C Low-Noise Amplifier ● ● ● ● ● ● 2 to 20- GHz Frequency Range T O R , I N C . 8310 3.5- dB Noise Figur e Midband 1.4:1 Typical Input/Output SWR 17.5- dBm Output Power at 1- dB Gain Compr ession 9- dB Typical Gain