87M DIODE Search Results

Contextual Info: 1N5916 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.3 @I(Z) (A) (Test Condition)87m Tolerance (%)20 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.6.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-41

Contextual Info: 1N5916B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.3 @I(Z) (A) (Test Condition)87m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.6.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-41

AO3407

Abstract: 87m diode
Contextual Info: AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L

g546a2

Abstract: G546B2 G546B1 G546A1P1Uf G546A1 G546B2 MOSFET G546B2P1UF G546A2P1UF G546B1P1UF G546B1P1U
Contextual Info: GMT- V4.0 G546 Dual Power Distribution Switch General Description The G546 is an integrated dual channel 87mΩ power switch for self-powered and bus-powered Universal Serial Bus USB applications. Several Protection features include current limiting with foldback, and thermal

Contextual Info: 1N5916C Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.3 @I(Z) (A) (Test Condition)87m Tolerance (%)2 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.6.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-41

G546

Abstract: OC2 mosfet
Contextual Info: G546 Global Mixed-mode Technology Inc. Dual Power Distribution Switch Features „ „ „ „ „ „ „ „ „ „ General Description 87mΩ High-Side MOSFET Available with 4 Versions of Current Limits with Foldback Operating Range:2.7V to 5.5V 400µS Typical Rise Time

Contextual Info: Dual P-channel MOSFET ELM14803AA-N •General description ■Features ELM14803AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 52mΩ (Vgs=-10V) Rds(on) < 87mΩ (Vgs=-4.5V)

AO3414

Abstract: smd diode S
Contextual Info: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3414 AO3414 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V) RDS(ON) 87m (VGS = 1.8V) 1 0.55 50m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1

A7 SMD TRANSISTOR

Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: AO3407 P-Channel Enhancement Mode Field Effect Transistor TO-236 Top View SOT-23 Features V DS (V) = -30V I D = -4.1 A D RDS(ON) < 52m Ω (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) S G General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This

Contextual Info: LESHAN RADIO COMPANY, LTD. LDP4803ET1G Dual P-Channel Enhancement Mode Field Effect Transistor Features VDS V = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) S1 S2 D2 D2 D1 D1 8 7 6 5 G1 4803 1 SOP-8 top view 2

Contextual Info: NEC ELECTRONICS INC b2E D • bMB7S2S ÜQ36mb 2Mb * N E C E DATA SHEET \H = C LIGHT EMITTING DIODE NDL5300 ELECTRON DEVICE 1 3 0 0 nm OPTICAL FIBER C O M M U N IC A TIO N InGaAsP LIG H T EM ITTIN G DIODE DESCRIPTION NOL53QO is an InGaAsP double heterostructure long wavelength LED.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD US3076-US3376 Preliminary CMOS IC DU AL U SB H I GH -SI DE POWER SWI T CH ̈ DESCRI PT I ON The UTC US3076-US3376 is an integrated dual channel for USB high-side power switch. It particularly designed for self-powered and bus-powered Universal Serial Bus USB applications.

unitrode 655

Abstract: M4302 M4300 UM4300 UM4301 UM4306 UM7300 UM7301 jm95 00103595
Contextual Info: PIN DIODE UM4300 SERIES UM7300 SERIES For A tte n u a to r A p p lic a tio n s Features • Extremely low distortion performance • Useful frequency range extends below 500 KHz • Power dissipation to 20W UM4300 • Capacitance as low as 0.7 pF (UM7300)

2SK797

Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION FEATURES 2SK797 The 2SK797 is N-Channel MOS Field Effect Power Transistor designed fo r solenoid, m otor and lamp driver. PACKAGE DIMENSIONS in m illim e te rs inches • Gate Drive — Logic level —

Contextual Info: Preliminary Data Sheet AS3802 CDMA/FM RECEIVE AGC AMPLIFIER AS3802 Austria Mikro Systeme International AG Key Features General Description □ S upports dual m ode operation. □ -50 to +50db gain control guaranteed. The A S 3802 is a gain controlled am plifier designed

Contextual Info: Preliminary Data Sheet AS3802 CDMA/FM RECEIVE AGC AMPLIFIER AS3802 Austria Mikro Systeme International AG Key Features General Description □ S upports dual m ode operation. □ -50 to +50db gain control guaranteed. The A S 3802 is a gain controlled am plifier designed

Contextual Info: MICRO PO WER S Y S T E M S INC blE D • b D tì7444 □ □ □ 4 b2 4 57G H f l P S -r-51-1 % MP7685 CMOS 11 -Bit, Low Power Analog-to-Digital Converter M icro Power System s FEATURES BENEFITS • Sampling Rate from 1 kHz to 1 MHz • Very Low Power CMOS -100 mW max

Contextual Info: D ecem b er 1994 3 ^ Micro Linear ML4761 Adjustable Output Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES Th e M L4761 is a boost regulator designed for D C to D C co n versio n in 1 to 3 c e ll battery pow ered system s. The com b in atio n o f B iC M O S process technology, internal

7205 REGULATOR

Abstract: sm 3316
Contextual Info: ML4861 PIN CONNECTION ML4861-6/-5/-3 8-Pin SOIC S08 1 8 — 1 v re f nz 2 7 1 GND f~ T ~ 3 6 ~ 4 5 _ l _ 1 V O U T v in Q D ETECT I I T~ 1 PW RGN D 1 R ESET n v L T O P V IE W PIN DESCRIPTION PIN NO. NAME 1 V|N 2 3 4 PIN NO. FUNCTION NAME FUNCTION Battery input voltage

LTC2934-2

Abstract: F02MR LTC2934-1 CR2032 3.3V battery
Contextual Info: LTC2934 Ultra-Low Power Adjustable Supervisor with Power-Fail Output DESCRIPTION FEATURES n n n n n n n n n 500nA Quiescent Current ±1.5% Max Accuracy over Temperature Operates Down to 1.6V Supply Adjustable Reset Threshold Adjustable Power-Fail Threshold

2N 5037

Abstract: N 4148 N4001 1n 4007 diode F948-ND
Contextual Info: September 1994 PRELIMINARY % M icro Linear ML4831 Electronic Ballast Controller GENERAL DESCRIPTION FEATURES The ML4831 is a complete solution for a dimmable, high power factor, high efficiency electronic ballast. Contained in the ML4831 are controllers for "boost" type power

Contextual Info: ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p for processors such as the Pentium Pro and Pentium II from Intel®.

Contextual Info: PRODUCT DATASHEET AAT4280 SmartSwitchTM Slew Rate Controlled Load Switch Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT4280 Sm art Swit ch is a P- channel MOSFET power swit ch designed for high- side load swit ching applicat ions. The P- channel MOSFET device has a t ypical RDS ON