86A MARKING Search Results

2N705

Abstract: I960 ARMv Germanium mesa
Contextual Info: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.

Contextual Info: Product Group: Vishay Semiconductors / Diodes / May 2015 /FF-DD-003-2015 From: Henry Chi, Product Marketing Sr. Manager Tel: +886 2 2911 3861 ext. 6533 office E-mail: henry.chi@vishay.com Subject: Information Notice – Product Marking DESCRIPTION OF CHANGE: Addition of cathode band on SMPCxxA series Transzorb TVS devices

to-277A

Abstract: JESD22-B102 J-STD-002 SS5P6
Contextual Info: New Product SS5P5 & SS5P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement • Low forward voltage drop, low power

JESD22-B102

Abstract: J-STD-002
Contextual Info: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement • Low forward voltage drop, low power

TO-277A

Abstract: SS3P4L JESD22-B102 J-STD-002 Marking Code s33 MARKING CODE 87A marking code s34 eas code 86A marking TO277A
Contextual Info: New Product SS3P3L & SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power

TO-277A

Abstract: MARKING CODE 87A JESD22-B102 SS10P6 TO-277A weight J-STD-002 S105 marking 86A ss10p6hm3 86A marking
Contextual Info: New Product SS10P5 & SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection

Contextual Info: New Product SS8P2L & SS8P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power

SS10PH45

Contextual Info: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C

diode marking s86c

Abstract: TO-277A to277a S86C ss8p6c-m3 "Schottky Diode" SMPC SS8P5C marking 86A JESD22-B102 J-STD-002
Contextual Info: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power

ss10p4hm3

Abstract: SS10P3 SS10P4 ss10p4-m3 JESD22-B102 J-STD-002 S103 TO-277A ss10p4-e3 ss10p4he3
Contextual Info: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power

V8P10

Contextual Info: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement

Contextual Info: New Product S4PB thru S4PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Glass passivated chip junction

Contextual Info: New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement

Contextual Info: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power

SS10P2CL

Abstract: JESD22-B102 J-STD-002 S102CL SS10P3CL
Contextual Info: New Product SS10P2CL & SS10P3CL Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power

JESD22-B102

Abstract: J-STD-002 S105 SS10P6
Contextual Info: New Product SS10P5 & SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection

TP 0720

Contextual Info: New Product SS8PH9 & SS8PH10 Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection

V10P10

Contextual Info: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement

S3330

Contextual Info: New Product SS3P3L & SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power

Contextual Info: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Guardring for overvoltage protection

Contextual Info: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power

V8P10

Contextual Info: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement

V10P10

Contextual Info: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement

Contextual Info: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power