86A MARKING Search Results
86A MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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86A MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
JESD22-B102
Abstract: J-STD-002
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Original |
J-STD-020, O-277A 2002/95/EC 2002/96/EC JESD22-B102 J-STD-002 | |
TO-277A
Abstract: SS3P4L JESD22-B102 J-STD-002 Marking Code s33 MARKING CODE 87A marking code s34 eas code 86A marking TO277A
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Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A TO-277A SS3P4L JESD22-B102 J-STD-002 Marking Code s33 MARKING CODE 87A marking code s34 eas code 86A marking TO277A | |
TO-277A
Abstract: MARKING CODE 87A JESD22-B102 SS10P6 TO-277A weight J-STD-002 S105 marking 86A ss10p6hm3 86A marking
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Original |
SS10P5 SS10P6 J-STD-020, 2002/95/EC 2002/96/EC O-277A TO-277A MARKING CODE 87A JESD22-B102 SS10P6 TO-277A weight J-STD-002 S105 marking 86A ss10p6hm3 86A marking | |
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Contextual Info: New Product SS8P2L & SS8P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power |
Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 | |
SS10PH45Contextual Info: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C |
Original |
SS10PH45 O-277A J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 SS10PH45 | |
V8P10Contextual Info: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement |
Original |
V8P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 V8P10 | |
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Contextual Info: New Product S4PB thru S4PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Glass passivated chip junction |
Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 | |
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Contextual Info: New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement |
Original |
V12P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 | |
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Contextual Info: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power |
Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 | |
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Contextual Info: New Product S4PB thru S4PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Glass passivated chip junction |
Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 | |
SS10P2CL
Abstract: JESD22-B102 J-STD-002 S102CL SS10P3CL
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Original |
SS10P2CL SS10P3CL J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 SS10P2CL JESD22-B102 J-STD-002 S102CL SS10P3CL | |
JESD22-B102
Abstract: J-STD-002 S105 SS10P6
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Original |
SS10P5 SS10P6 J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 JESD22-B102 J-STD-002 S105 SS10P6 | |
TP 0720Contextual Info: New Product SS8PH9 & SS8PH10 Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection |
Original |
SS8PH10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 TP 0720 | |
V10P10Contextual Info: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement |
Original |
V10P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A O-277As 08-Apr-05 V10P10 | |
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Contextual Info: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Guardring for overvoltage protection |
Original |
SS10P3 SS10P4 J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 | |
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Contextual Info: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power |
Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 | |
V8P10Contextual Info: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement |
Original |
V8P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 V8P10 | |
V10P10Contextual Info: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement |
Original |
V10P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A O-277Aany 18-Jul-08 V10P10 | |
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Contextual Info: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power |
Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 | |
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Contextual Info: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Guardring for overvoltage protection |
Original |
SS10P3 SS10P4 J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 | |
87A DIODESContextual Info: New Product SS8P3C & SS8P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power |
Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 87A DIODES | |
S104CContextual Info: New Product SS10P3C & SS10P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power |
Original |
SS10P3C SS10P4C J-STD-020 2002/95/EC 2002/96/EC O-277A 18-Jul-08 S104C | |
J-STD-002
Abstract: JESD22-B102 S3430
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Original |
J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 J-STD-002 JESD22-B102 S3430 | |
JESD22-B102
Abstract: J-STD-002
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Original |
J-STD-020, O-277A 2002/95/EC 2002/96/EC 18-Jul-08 JESD22-B102 J-STD-002 | |