865 RF TRANSISTOR Search Results

865 RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
93425ADM/B	Rochester Electronics LLC	93425 - 1K X 1 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

865 RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor P239 Abstract: 865 RF transistor MAPLST0810-030CF p239 Contextual Info: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V 5/14/04 MAPLST0810-030CF Preliminary Features Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:	Original	MAPLST0810-030CF 960MHz, 26VDC: 925MHz P-239 transistor P239 865 RF transistor MAPLST0810-030CF p239	PDF
transistor P239 Abstract: P239 transistor P239 045-CF 865 RF transistor P-239 MAPLST0810-045CF Contextual Info: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V 5/21/04 MAPLST0810-045CF Preliminary Features Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:	Original	MAPLST0810-045CF 960MHz, 26VDC: 900MHz P-239 transistor P239 P239 transistor P239 045-CF 865 RF transistor P-239 MAPLST0810-045CF	PDF
MAPLST0810-90CF Abstract: MAPLST0810-090CF Contextual Info: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V 5/14/04 MAPLST0810-090CF Preliminary Features Q Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:	Original	MAPLST0810-090CF 960MHz, 26VDC: 900MHz P-238 MAPLST0810-90CF MAPLST0810-90CF MAPLST0810-090CF	PDF
MRF9085 Abstract: UGF09085F UGF09085P Contextual Info: UGF09085 90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 865 to 890 MHz. Rated with a minimum output power of 90W, it is ideal for large signal common source	Original	UGF09085 MRF9085 IS-97) -40dBc 750kHz -55dBc 98MHz UGF09Pow 700mA 880MHz MRF9085 UGF09085F UGF09085P	PDF
MRF9120 Abstract: MRF9120S Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these	Original	MRF9120/D MRF9120 MRF9120S MRF9120S	PDF
MRF9210 Abstract: DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X Contextual Info: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9210/D MRF9210 MRF9210 DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X	PDF
MRF9120 Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these	Original	MRF9120/D MRF9180 MRF9180S MRF9120/D MRF9120	PDF
100B470JP500X Abstract: MRF9120 Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these	Original	MRF9120/D MRF9120 MRF9120S MRF9120/D 100B470JP500X	PDF
MRF9120 Contextual Info: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 to 895 MHz band. The high gain and broadband performance of this	Original	MRF9120/D MRF9120 MRF9120S	PDF
MRF9180R6 Contextual Info: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9180 MRF9180R6 IS-95 MRF9180R6	PDF
MRF9180 Abstract: MRF9180R6 Contextual Info: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9180 MRF9180R6 IS-95 MRF9180 MRF9180R6	PDF
MARKING WB1 Abstract: ATC100B470JT500XT MRF9135L MRF9135LR3 T491D106K035AT Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9135LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135LR3 MRF9135L MARKING WB1 ATC100B470JT500XT MRF9135LR3 T491D106K035AT	PDF
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J Contextual Info: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E AGR09045EU AGR09045EF AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J	PDF
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Contextual Info: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW	PDF

MRF9120 Abstract: MRF9120LR3 Contextual Info: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	MRF9120 MRF9120LR3 IS-95 MRF9120 MRF9120LR3	PDF
MRF9180 Abstract: MRF9180S Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance	Original	MRF9180/D MRF9180 MRF9180S MRF9180 MRF9180S	PDF
c5047 Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW Contextual Info: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-155RFPP DS04-123RFPP) c5047 JESD22-C101A 100B3R9BW 100B4R7 100B4R7BW	PDF
rf push pull mosfet power amplifier Abstract: class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622 Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	MRF9120LR3 MRF9120 rf push pull mosfet power amplifier class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622	PDF
AGR09030GUM Abstract: JESD22-C101A RF35 Contextual Info: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35	PDF
93F2975 Abstract: marking 865 amplifier 100B120JP 865 marking amplifier Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135LR3 MRF9135LSR3 93F2975 marking 865 amplifier 100B120JP 865 marking amplifier	PDF
AGR09180EF Abstract: JESD22-C101A Contextual Info: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09180EF Hz--895 AGR09180EF DS04-123RFPP DS04-031RFPP) JESD22-C101A	PDF
MRF9120 Contextual Info: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	MRF9120 MRF9120LR3 IS-95 MRF9120	PDF
MARKING WB1 Abstract: MRF9135LSR3 ATC100B470JT500XT MRF9135L T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9135L - 2 Rev. 10, 9/2008 RF Power Field Effect Transistor MRF9135LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135L MRF9135LSR3 MARKING WB1 MRF9135LSR3 ATC100B470JT500XT T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT	PDF
MRF9085 Abstract: MARKING WB1 EB212 MRF9085LR3 c13 cutout Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9085LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9085LR3 MRF9085-2 MRF9085 MARKING WB1 EB212 MRF9085LR3 c13 cutout	PDF

865 RF TRANSISTOR Search Results

865 RF TRANSISTOR Result Highlights (5)

865 RF TRANSISTOR Datasheets Context Search

transistor P239

transistor P239

MAPLST0810-90CF

MRF9085

MRF9120

MRF9210

MRF9120

100B470JP500X

MRF9120

MRF9180R6

MRF9180

MARKING WB1

AGR09045E

C1206C104KRAC7800

MRF9120

MRF9180

c5047

rf push pull mosfet power amplifier

AGR09030GUM

93F2975

AGR09180EF

MRF9120

MARKING WB1

MRF9085