8550 L Search Results

SOT-23-5 MARKING VF

Abstract: MIPS2520D3R3M S-8550AA-I8T1G C3216X7R1E475K NR4018T3R3M transistor s8550 rohm sot-23-5 marking S-8550 S-8551 S-8550AA
Contextual Info: Rev.3.0_00 STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS S-8550/8551 Series The S-8550/8551 Series is a CMOS synchronous rectification step-down switching regulator which mainly consists of a reference voltage circuit, an

8550D transistor

Abstract: BR 8550D BR 8050 BR 8550 D 8550D 8550c st 8550d transistor 8050 d npn 8050 br 8550 NPN Transistor
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

st8550d

Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

8550D transistor

Abstract: br 8550 NPN Transistor BR 8550 D 8550C 8550D BR 8550D BR 8550 BR 8050 BR 8050 D 8550 NPN Transistor
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550D

Abstract: BR 8550 D 8550c 8550D transistor br 8550 NPN Transistor BR 8550D 8550 NPN Transistor 8550 pnp he 8550d BR 8050
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550c

Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

BB804

Contextual Info: BB804 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

BAW56

Contextual Info: BAW56 TELEFUNKEN Semiconductors Silicon planar dual diode Features D Common anode Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward

BR 8550

Abstract: br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

Temic Semiconductors bav99

Abstract: BAV99 bav99 telefunken
Contextual Info: BAV99 TELEFUNKEN Semiconductors Silicon planar dual diode Features D Connected in series Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward

Contextual Info: BAT54/A/C/S Vishay Telefunken Small Signal Schottky Barrier Diode Features D Low Turn–on Voltage D Fast Switching D PN Junction Guard Ring for Transient and ESD Protection 94 8550 Order Instruction Type BAT54 BAT54A BAT54C BAT54S Type Differentiation VR = 30 V, Single Diode

PNP transistor 8550

Abstract: transistor 8550 8550 pnp transistor PNP 8550 8550 pnp he 8550 pnp transistor c 8550 transistor 8550 transistor
Contextual Info: PNP TRANSISTOR 8550 -1.5A Power Dissipation: 1.0W Collector Current: -1.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo

Contextual Info: _ BB824 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode • High capacitance ratio Applications Tuning of separate resonant circuits, push-pull circuits in FM range, for car radios 94 8550 Absolute Maximum Ratings

1N4148

Abstract: BAV70 Kjh diode
Contextual Info: BAV70 Vishay Telefunken Dual Switching Diode Features D D D D Fast switching speed Electrically identical to standard JEDEC 1N4148 High conductance Surface mount package ideally suited for automatic insertion D Common cathode 94 8550 Order Instruction Type

Contextual Info: BAS19–BAS21 Vishay Telefunken Switching Diodes Features D Silicon planar epitaxial high speed diode D For switching and general purpose applications 94 8550 Order Instruction Type BAS19 BAS20 BAS21 Type Differentiation VRRM = 120 V VRRM = 200 V VRRM = 250 V

BR 8550

Abstract: BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector

BB804

Abstract: 43- diode CD38P
Contextual Info: BB804 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Order Instruction Type BB804 BB804–0

BB824

Contextual Info: BB824 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Order Instruction Type

kje vishay

Contextual Info: BAV99 Vishay Telefunken Dual Surface Mount Switching Diode Features D Fast switching speed D High conductance D Surface mount package ideally suited for automatic insertion D Connected in series 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions

KZ9 sot23

Abstract: KZ5 X kz4 diode KY3 SOT23 KZ7 sot23 KZ3 SOT23 BZX84C BZX84C2V7 BZX84C51 ZENER 5V1 VISHAY
Contextual Info: BZX84C2V7–BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V – 51V Ideally suited for automated assembly processes 94 8550 Absolute Maximum Ratings Tj = 25_C

Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

Contextual Info: BAV99 vtsM A Y ▼ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast sw itching speed • High conductance • Surface m ount package autom atic insertion • C onnected in series ideally suited for 94 8550 Absolute Maximum Ratings Tj = 25°C

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ