8550 L Search Results

SOT-23-5 MARKING VF

Abstract: MIPS2520D3R3M S-8550AA-I8T1G C3216X7R1E475K NR4018T3R3M transistor s8550 rohm sot-23-5 marking S-8550 S-8551 S-8550AA
Contextual Info: Rev.3.0_00 STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS S-8550/8551 Series The S-8550/8551 Series is a CMOS synchronous rectification step-down switching regulator which mainly consists of a reference voltage circuit, an

Contextual Info: Rev.2.1_00 STEP-DOWN, BUILT-IN FET, SYNCHRONOUS RECTIFICATION, PWM CONTROL SWITCHING REGULATORS S-8550/8551 Series The S-8550/8551 Series is a CMOS synchronous rectification step-down switching regulator which mainly consists of a reference voltage circuit, an

BFCN-8650

Contextual Info: New Product Announcement! LTCC Bandpass Filter BFCN-8650+ 50Ω 8550 to 8750 MHz The Big Deal Click here for data sheet • Small size 3.2mm x 1.6mm • Pass band 8550-8750 MHz • Low Insertion Loss (2.0 dB typical) • Sharp rejection peaks close to stop band

k MPS 8550 D

Abstract: K 8550 MPS 8550 B kmps8550 k MPS 8550 8550B MPS 8550 C MPS 8550 D KEC 8550 DSA0010574
Contextual Info: SEMICONDUCTOR MPS8550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8550 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8550 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.

transistor 8550

Abstract: LTCC X band
Contextual Info: New Product Announcement! LTCC Band Pass Filter 50Ω BFCN-8450+ 8350 to 8550 MHz The Big Deal Click here for data sheet • Small size 3.2mm x 1.6mm • Pass band 8350-8550 MHz • Low Insertion Loss (2.0 dB typical) • Sharp rejection peaks close to stop band

ST 8550 D

Abstract: C 8550 d
Contextual Info: AC axial compact fan 8550 N ebm-papst St. Georgen GmbH & Co. KG Hermann-Papst-Straße 1 D-78112 St. Georgen Phone +49 7724 81-0 Fax +49 7724 81-1309 info2@de.ebmpapst.com www.ebmpapst.com Nominal data Type 8550 N Phase 1~ Nominal voltage VAC 230 Frequency

bfcn-8650

Contextual Info: LTCC Bandpass Filter BFCN-8650+ 50Ω 8550 to 8750 MHz The Big Deal CASE STYLE: FV1206-4 • Small size 3.2mm x 1.6mm • Pass band 8550-8750 MHz • Low Insertion Loss (2.0 dB typical) • Sharp rejection peaks close to stop band Product Overview The BFCN-8650+ LTCC Band Pass Filter is constructed with 5 layers in order to achieve a miniature size

BR 8550D

Abstract: 8550D transistor 8550c st 8550d 8550d BR 8550 he 8550d transistor 8550D transistor 8550D PNP transistor 8550
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

8550D transistor

Abstract: BR 8550D BR 8050 BR 8550 D 8550D 8550c st 8550d transistor 8050 d npn 8050 br 8550 NPN Transistor
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

Contextual Info: BAT54/A/C/S Vishay Semiconductors Small Signal Schottky Barrier Diode Features D Low Turn–on Voltage D Fast Switching D PN Junction Guard Ring for Transient and ESD Protection 94 8550 Order Instruction Type BAT54 BAT54A BAT54C BAT54S Type Differentiation

BAT54

Abstract: BAT54A BAT54C BAT54S
Contextual Info: BAT54/A/C/S Vishay Semiconductors Small Signal Schottky Barrier Diode Features D Low Turn–on Voltage D Fast Switching D PN Junction Guard Ring for Transient and ESD Protection 94 8550 Order Instruction Type BAT54 BAT54A BAT54C BAT54S Type Differentiation

BR 8550D

Abstract: 8550D transistor 8550C transistor 8550D 8550D br 8550c NPN Transistor transistor 8550D PNP br 8550 NPN Transistor NPN transistor 8550d BR 8050
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

st8550d

Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550D

Abstract: 8550C 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D PNP 8550 NPN Transistor br 8550c NPN Transistor transistor 8550D BR 8550 D
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550D

Abstract: BR 8550 D 8550c 8550D transistor br 8550 NPN Transistor BR 8550D 8550 NPN Transistor 8550 pnp he 8550d BR 8050
Contextual Info: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550c

Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

BB804

Contextual Info: BB804 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C

BR 8550

Abstract: br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

BAW56

Contextual Info: BAW56 TELEFUNKEN Semiconductors Silicon planar dual diode Features D Common anode Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward

BR 8550

Abstract: br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BR 8550

Abstract: br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

BB814

Contextual Info: BB814 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C

BA779

Contextual Info: BA779–2 TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol