850 NM PHOTODIODE INP Search Results

Contextual Info: Photodiode-Chip EPC-1300-0.5-1 04.07.2011 rev. 12 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIRregion (800-1700 nm)

Contextual Info: Photodiode-Chip EPC-1300-0.5-1 16.05.2008 rev. 10 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIRregion (800-1700 nm)

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

6601 D

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

photodiode ber 10-9

Abstract: sub preamp G9285-14 KGPD1010E02 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)

photodiode ber 10-9

Abstract: G10447-51 G10447-54 KGPD1019E02 SE-171 LC pin rosa 10
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9285-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 2.0 V/mW (-20 dBm)

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447 series ROSA type, 850 nm, 10 Gbps Features G10447-14 G10447-54 Applications l φ1.25 mm sleeve type ROSA Receiver Optical l 10 gigabit ethernet Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps

G9845-14

Abstract: KGPD1017E01 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9845-14 ROSA type, 850 nm, 1.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 1.25 Gbps l High gain with AGC (Auto Gain Control): 1.6 V/mW (at -20 dBm)

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l SDH/SONET l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l Optical fiber communications l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 G10447-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm -54 / φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9846-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.9 V/mW (at -20 dBm)

G10447-51

Abstract: G10447-54 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm G10447-54 / φ2.5 mm (G10447-51) sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9735-14 Rosa type, 850 nm, 4.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 4.25 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -22 dBm Typ.

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9735-14 Rosa type, 850 nm, 4.25 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 4.25 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -22 dBm Typ.

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9286-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical l Gigabit Ethernet Sub-Assembly l Fiber channel l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.65 V/mW (-17 dBm)

sensitivity dB photodiode pin

Abstract: sub preamp G9286-14 KGPD1011E03 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9286-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical l Gigabit Ethernet Sub-Assembly l Fiber channel l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.65 V/mW (-17 dBm)

p-i-n photodiode -21 dBm

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9286-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical l Gigabit Ethernet Sub-Assembly l Fiber channel l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.65 V/mW (-17 dBm)

ST 2n2222

Contextual Info: Radiation Tolerant Bulkhead Optocoupler 66280 Mii OPTOELECTRONIC PRODUCTS DIVISION PRELIMINARY 8/18/05 Features: Applications: • • • • • • High reliability Base lead provided for conventional transistor biasing • 850 nm LED, silicon photodiode & 2N2222

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -14 dBm Typ. (Extinction ratio=4.5 dB)

Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -14 dBm Typ. (Extinction ratio=4.5 dB)

G9287-14

Abstract: KGPD1012E03 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -14 dBm Typ. (Extinction ratio=4.5 dB)