8409 DIODE Search Results

74s409

Contextual Info: 256K D y n a m ic R A M SN74S409-2/DP8409A-2 s n 74S409/ d p 8409 a C o n t r o lle r / D r iv e r O rdering Inform ation F e a tu re s / B enefits • All DRAM drive functions on one chip have on-chip highcapacitance load drivers specified up to 88 DRAMs

DP8409AN-2

Abstract: DP8409AN DP8409AD-2 dp8409ad DP8409AN2 8409A-2 C1995 D48A DP8409A N48A
Contextual Info: DP8409A Multi-Mode Dynamic RAM Controller Driver General Description Operational Features Dynamic memory system designs which formerly required several support chips to drive the memory array can now be implemented with a single IC the DP8409A MultiMode Dynamic RAM Controller Driver The DP8409A is capable of driving all 16k and 64k Dynamic RAMs DRAMs as

diode 8409

Abstract: marking 8409 8409 diode
Contextual Info: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging

8409 diode

Abstract: Si8409DB 8409 J-STD-020A Si8401DB S-41816 diode 8409 marking 8409
Contextual Info: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging

Si8401DB

Abstract: Si8409DB
Contextual Info: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

D1408

Abstract: D1201 D1201S 610 108 001 LT 7706 rt 108 rt 2880 D368S D438
Contextual Info: 0 3,5+0’1 deepth = 4±0,2on both s id e s . 103 Type Circuit svmbol N K Anode $ Rope Thread red $ Thread Rope blue 036 036 30 • 34G3ET7 □ D 0 2 1 7 ti 03b This Material Copyrighted By Its Respective Manufacturer P ro ! flex, tubino Cathode Fast Rectifier Diodes

DO-213AB 4007

Abstract: 1N4469 JANTX1N4469 w9041 JANTXV1N4468US
Contextual Info: Zener Regulator Diodes M/craem/ I Part Number JANTX1N4467US JANTXV1N4467 JANTXV1N4467US SMBJ4742 SMBJ4742A 1N5928A 1N5928B 1N5928C 1N5928D MLL5928B MLL5928B-1 MLL5928C MLL5928C-1 MLL5928D MLL5928D-1 SMBJ5928B 1N4468 1N4468US JAN1N4468 JAN1N4468US JANS1N4468

telefunken ha 880

Abstract: BPV20NFL itt 84-10
Contextual Info: Temic BPV20NFL S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV20NFL is a high speed and high sensitive PIN photo­ diode in a plastic package with a cylindrical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally

Contextual Info: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

DG3000

Contextual Info: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Contextual Info: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET

s659

Abstract: 649S S211S
Contextual Info: Type Circuit symbol N K Prot. flex, tubino Cathode Anode $ Rope Thread red $ Thread Rope blue 036 la 036 1— a ti 8,5 is “ " ìO 112 3 4 0 3 E T 7 0 0 0 2 1 7 e! 63b Fast Rectifier Diodes Type w 1 V RRM I frmsm V A V rsm = V rrm + 100 V I fsm J i2d t I favm ^ c

Si8401DB

Abstract: DG3000
Contextual Info: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Contextual Info: BPV23FL y m m f _ ▼ Vishay Telefunken Silicon PIN Photodiode Description BPV23FL is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAIAs IR emit­

BPW41N

Abstract: bpw41 BPW41N IR DATA bpw photodiode bpw 41
Contextual Info: TELEFUNKEN Semiconductors BPW 41 N Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters

DIODE BP

Abstract: BP104 8409 diode
Contextual Info: TELEFUNKEN Semiconductors BP 104 Silicon PIN Photodiode Description 94 8386 BP104 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO–5 devices in many

S186P

Abstract: 8409 diode
Contextual Info: TELEFUNKEN Semiconductors S 186 P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters

BPW83

Abstract: LARGE SURFACE AREA PHOTODIODE filter BPW 61
Contextual Info: BPW 83 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW83 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .

S186P

Abstract: 820nM
Contextual Info: S186P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm . The large active area combined with a flat case gives a

BPV22NF

Contextual Info: TELEFUNKEN Semiconductors BPV 22 NF Silicon PIN Photodiode Description BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on

BPV23NF

Contextual Info: TELEFUNKEN Semiconductors BPV 23 NF Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on

BPV22F

Abstract: diode a1 7
Contextual Info: TELEFUNKEN Semiconductors BPV 22 F Silicon PIN Photodiode Description BPV22F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

BPW24R

Abstract: diode 8409
Contextual Info: TELEFUNKEN Semiconductors BPW 24 R Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO–18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The