82M MARKING Search Results
82M MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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82M MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DMN3404Contextual Info: DMN3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max 30V 28mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V 82mΩ @ VGS = 3V ID max TA = +25°C 5.8A 4.8A 2.0A Description This MOSFET has been designed to minimize the on-state resistance |
Original |
dmn3404laec-q101ds31787dmn3404 | |
TS16949
Abstract: ZXTN25040DFL ZXTP25040DFL ZXTP25040DFLTA
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zxtp25040dfl-115mv350mwzxtn25040dfl+3 | |
APM2702
Abstract: APM2702CG STD-020C APM27
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apm2702cgapm2702mil-std-883d-2003883d-1005+4 | |
APM2702CG
Abstract: APM2702 A102 STD-020C marking CODE 001 apm27
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apm2702cgapm2702a102std-020c+2 | |
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Contextual Info: APM2702CG Load Switch with Level-Shift Pin Description Features • -12V/±3A, RDS ON =45mΩ(typ.) @ VGS=-4.5V RDS(ON)=60mΩ(typ.) @ VGS=-2.5V RDS(ON)=82mΩ(typ.) @ VGS=-1.8V • • Low Forward Voltage Lead Free Available (RoHS Compliant) Top View of JSOT-6 |
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apm2702cg-12v/apm2702mil-std-883d-2003+3 | |
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Contextual Info: FDN5632N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features Applications RDS on = 98mΩ at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V |
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fdn5632n | |
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Contextual Info: FDN5632N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features Applications RDS on = 98mΩ at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V |
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fdn5632n | |
Marking Code 34nContextual Info: DMN3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max 30V 28mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V 82mΩ @ VGS = 3V ID max TA = +25°C 5.8A 4.8A 2.0A • Low On-Resistance Low Input Capacitance Fast Switching Speed |
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dmn3404laec-q101ds31787marking code 34n | |
APM2702
Abstract: M2702 A102 APM2702CG
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apm2702cgapm2702m2702a102 | |
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Contextual Info: PPJA3413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -3.4A Current SOT-23 Unit: inch mm Features RDS(ON) , VGS@-4.5V, ID@-3.4A<82mΩ RDS(ON) , VGS@-2.5V, ID@-2.2A<110mΩ RDS(ON) , VGS@-1.8V, ID@-1.2A<146mΩ Advanced Trench Process Technology |
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ppja3413ot-232011/65/euiec61249+2 | |
Marking Code 34nContextual Info: Product specification DMN3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max 30V 28mΩ @ VGS = 10V 42mΩ @ VGS = 4.5V 82mΩ @ VGS = 3V ID max TA = +25°C 5.8A 4.8A 2.0A Description This MOSFET has been designed to minimize the on-state resistance |
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dmn3404laec-q101marking code 34n | |
si2302
Abstract: diode F8 23
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si2302ot-23diode f8 23 | |
MARKING CODE f8 sot23
Abstract: SI2302
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si2302ot-23marking code f8 sot23 | |
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Contextual Info: SCMS5D12 SMD POWER INDUCTORS XXX MARKING ● Features 1. 2 3 4 Magnetically shielded construction – Low EMI Excellent Power Density Engineered to Provide High Efficiency High Inductance, Wide Current Range, Low Profile ELECTRICAL CHARACTERISTICS 2 (1) |
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scms5d12100khzscms5d12-1r5scms5d12-2r2+2 | |
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Contextual Info: SCMS5D12 SMD POWER INDUCTORS XXX MARKING 1. 2 3 4 Features Magnetically shielded construction – Low EMI Excellent Power Density Engineered to Provide High Efficiency High Inductance, Wide Current Range, Low Profile ELECTRICAL CHARACTERISTICS 2 (1) Saturation(3) Temperature |
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scms5d12100khzscms5d12-1r5scms5d12-2r2+2 | |
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Contextual Info: SCRH1035R SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 1 SCRH1035R-1R5 SCRH1035R-2R2 SCRH1035R-3R3 SCRH1035R-4R7 SCRH1035R-5R6 |
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scrh1035rscrh1035r-1r5scrh1035r-2r2scrh1035r-3r3+6 | |
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Contextual Info: FBF series Copper Terminal Type High-Power Low Resistance Lead Free Chip Resistors PDC 1. SCOPE…………………………………………………………….2 1.1 Purpose……………….……………………………………….2 1.2 Configuration.………………………………………………. 2 |
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16kpcs/reel | |
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Contextual Info: . Thickfilm Resistor CS 004 / CS 004 C ► Resistance ranges, tolerances and TC’s Tolerance Resistance ranges ± 1% 10K - 10M ± 2% >10M - 100M ± 5% >100M - 250M ± 10% >250M - 1G All values within the resistance range are available. Lower tolerance-values upon request. |
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100x10250x10 | |
82M SENSOR
Abstract: RH - 005C
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100x10250x1082m sensorrh - 005c | |
rh 006c
Abstract: CS-006
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cs006l100x10250x10rh 006c+1 | |
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Contextual Info: FIXED THICK FILM CHIP RESISTORS; RECTANGULAR TYPE & LOW OHM KAMAYA OHM •1. Features Suitable for current detection of high-precision circuits power supply, motor, etc. 2. Stability Class : 5% •Dimensions W L c c d d Rated resistance value is marked with 4-digit on the over coating. |
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rls50rls63 | |
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Contextual Info: EIN UNTERNEHMEN VON Keramik-Kondensatoren fur die Unterhaltungs-Elektronik Ceramic Capacitors for entertainment electronics Roederstein Keram ische Scheibenkondensatoren fur Funkerrtstdm ng, Klasse Y C eram ic disc capacitors fo r radio interference suppression, class Y |
OCR Scan |
vi-198022/tl110oopf7fl21b24+1 | |
IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
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OCR Scan |
sc-63t0-126lpt0-220cit0-220ml+16 | |
LM2682
Abstract: laptop lcd inverter pin LM358 spice model SO8 tray
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lm268290ohm5-aug-2002laptop lcd inverter pin+2 | |