828 TRANSISTOR EQUIVALENT Search Results

2SK1828

Contextual Info: TOSHIBA 2SK1828 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2SK1 828 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS + 0.5 2 .5 - 0 .3 + 0.25 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode

Contextual Info: T O S H IB A 2SK1828 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 828 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 + 0.25 i 1.5-0.15 i 2.5V Gate Drive Low Threshold Voltage : V^h —0.5—1.5V

MG200H1AL2

Abstract: iC 828 Transistor 828 TRANSISTOR equivalent MG200H1 transistor 828
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=80 Min. (Ic=200A) . Low Saturation Voltage

Contextual Info: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier

3654A

Abstract: at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0
Contextual Info: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier

ATA5279

Abstract: A6p DIODE TRANSISTOR A1p atmel 708 QFN44 QFN48 Atmel 710 Atmel ATmega 32 64 pin 9168B transistor a6n
Contextual Info: LF Antenna Driver ATA5279P Thermal Considerations and PCB Design Hints 1. General To minimize EMC radiation, the ATA5279P is designed to drive antennas with a sinusoidal waveform. For the same reason the switching edges of the integrated boost transistor are decoupled. This, however, also leads to higher power dissipation and

66207

Abstract: nec 151 nec asic product letter
Contextual Info: 150 µm Structured ASICs CMOS-12M Structured Array Product Letter Description CMOS-12M is NEC Electronics’ new structured array technology with embedded highdensity SRAMs and analog PLLs. The technology enables the integration of large size SRAM modules in structured array and is capable of supporting up to 2.6 Mb of embedded

dta144es

Abstract: DTA144EU
Contextual Info: DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV h -7 > v 7-. £ / J ransistors D T A 1 4 4 E U /D T A 1 4 4 E K /D T A 1 4 4 E S D T A 1 4 4 E F /D T A 1 4 4 E L /D T A 1 4 4 E A DTA1 4 4 E V r> '^ b h7>y^^ Y ^ ' y y 7 ,^ X ' f y 3-/Transistor Switch

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
Contextual Info: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

TRANSISTOR ML6

Contextual Info: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

JS SOT23-5

Abstract: MAX828
Contextual Info: 19-0495; Rev 1; 7/96 J V \ Æ X A J ¥ K S w itch ed -C ap acito r Voltage In v e rte rs _ Applications Small LCD Panels Cell Phones Medical Instruments .Features ♦ 5-Pin SOT23-5 Package ♦ 95% Voltage Conversion Efficiency ♦ Inverts Input Supply Voltage

MGF4919

Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to

mosfet triggering circuit for inverter

Abstract: digital triggering scr P-Channel Depletion Mosfets SCR TRANSISTOR SCR RECTIFIER scr triggering two transistor forward 1N914 AN-109 HP5082-2835
Contextual Info: ANALOG ► DEVICES AN-109 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Understanding and Preventing Latch-Up in CMOS DACs by Mark Alexander INTRODUCTION Many designers now use analog and digital CMOS ICs in their de­

digital triggering scr

Abstract: mosfet triggering circuit for inverter modern transistor substitute 12 VOLTS INVERTER CIRCUIT USING MOSFET 1n014 SCR IC CHIP SCR Gate Drive SCR RECTIFIER scr triggering AN-109
Contextual Info: ► ANALOG DEVICES AN-109 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Understanding and Preventing Latch-Up in CMOS DACs by Mark Alexander INTRODUCTION Many designers now use analog and digital CMOS ICs in their de­

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

828 npn

Abstract: MPS6523
Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage

ICL828

Abstract: ICL828IH-T MAX828 TB379
Contextual Info: ICL828 TM Data Sheet June 2000 Switched-Capacitor Voltage Inverter Features The ICL828 IC performs supply voltage conversions from positive to negative for an input range of +1.5V to +5.5V resulting in complementary output voltages of -1.5V to -5.5V. The ICL828 has a 12kHz internal oscillator and requires two

Contextual Info: r r z S G S -T H O M S O N Ä 7# M 54H C 423/423A M 74H C 423/423A l* « m g r a e K S DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGHSPEED tpD = 25 ns (TYP) at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lcc=4 jiA (MAX.) AT Ta=25"C ACTIVE STATE Ice = 700 nA (MAX.) AT Vcc=5V

MAX828

Abstract: TB379 ICL828 ICL828IH-T
Contextual Info: ICL828 TM Data Sheet June 2000 Switched-Capacitor Voltage Inverter Features The ICL828 IC performs supply voltage conversions from positive to negative for an input range of +1.5V to +5.5V resulting in complementary output voltages of -1.5V to -5.5V. The ICL828 has a 12kHz internal oscillator and requires two

a7105

Abstract: TEA7105 A7105-02 E88TEA7105-01
Contextual Info: SGS-THOMSON = L iO T 2 M S T E A 7 1 0 5 VOLTAGE REGULATOR FOR CMOS MICROPROCESSOR BASED SYSTEMS O UTPUT CURRENT : 100 mA O N-CHIP CURRENT LIM IT AND THERM AL PROTECTION RESET G ENERATOR W ITH EXTERNALLY AD­ JUSTABLE DELAY REGULATOR INPUT VOLTAGE LEVEL DE­

lt1063

Contextual Info: u rm TECHNOLOGY LT1083/LT1084/LT1085 7.bK 5A, 3A Low Dropout Positive Adjustable Regulators F€ A T U A € S D C S C R IP T IO A • Three Terminal Adjustable The LT1083 series of positive adjustable regulators are de­ ■ Output Current of 3 A, 5A or 7.5 A

Contextual Info: *57 SGS-THOMSON M O T « ! T E A 7 1 05 VOLTAGE REGULATOR FOR CMOS MICROPROCESSOR BASED SYSTEMS O UTPUT CURRENT : 100 mA ON-CHIP CUR RENT LIMIT AND THERM AL PROTECTION RESETG ENERATOR WITH EXTERNALLY AD­ JUSTABLE DELAY REGULATOR INPUT VOLTAGE LEVEL DE­

quartz KONY hc49s

Abstract: SCHEMATIC POWER SUPPLY dvbt DVB-T Schematic set top box BS4 siemens TDA6651 capacitor 476 10k 719 SMD KONY crystal KONY DVB-T Terrestrial Schematic dvbt diagram schematic
Contextual Info: APPLICATION NOTE - TDA6650/51TT 3-BAND MIXER/OSCILLATOR AND LOW NOISE PLL FOR DIGITAL AND TERRESTRIAL TUNERS AN01014 _4 Philips Semiconductors TDA6650/51TT 3-band mixer/oscillator and low noise PLL for digital and terrestrial tuners Application Note AN01014_4

low-noise preamplifier Microphone

Abstract: N0600
Contextual Info: Philips Semiconductors Product specification Multistandard Programmable Analog CMOS Transmission 1C PCA1070 FEATURES • Line interface with: - Voltage regulator with programmable DC voltage drop - Programmable set impedance - Output to control an external switching MOS