80W TRANSISTOR AUDIO AMPLIFIER Search Results

80W TRANSISTOR AUDIO AMPLIFIER

Abstract: KTD1530
Contextual Info: SEMICONDUCTOR KTD1530 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. FEATURES ・Complementary to KTB2530. ・Recommended for 80W Audio Amplifier Output Stage. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING

NTE2654

Contextual Info: NTE2654 Silicon NPN Transistor Audio Power Amp Output Features: D High Collector Breakdown Voltage D Suitable for use in 80W High Fidelity Audio Amplifier Output Stage Absolute Maximum Ratings: TC = +25°C unles otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V

Contextual Info: SEMICONDUCTOR KTA1962 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. FEATURES ・High Collector Voltage : VCEO=-230V Min. ・Complementary to KTC5242. ・Recommended for 80W High Fidelity Audio Frequency Amplifier Output Stage.

Complementary Darlington Audio Power Amplifier

Abstract: 80w audio
Contextual Info: SEMICONDUCTOR KTB2530 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON APPLICATION. FEATURES ・Complementary to KTD1530 ・Recommended for 80W Audio Amplifier Output Stage. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING

DSA0038067

Contextual Info: SEMICONDUCTOR KTD1530 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. A N O FEATURES B Q K F ・Complementary to KTB2530. R G H I C J ・Recommended for 80W Audio Amplifier Output Stage. D MAXIMUM RATING Ta=25℃

KTA1962

Abstract: KTC5242
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC5242 TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Breakdown Voltage : VcEO=230V Min. • Complementary to KTA1962. • Recommended for 80W High Fidelity Audio Frequency

2SA1942

Abstract: 2SC5199
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Complement to Type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier

KTA1962

Abstract: KTC5242
Contextual Info: SEMICONDUCTOR KTA1962 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E ᴌHigh Collector Voltage : VCEO=-230V Min. C ᴌComplementary to KTC5242. J H ᴌRecommended for 80W High Fidelity Audio Frequency G

2SA1962 TOSHIBA

Abstract: 2SA1962 2SC5242 I25L Toshiba 2SC5242
Contextual Info: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier

KTA1962

Abstract: KTC5242
Contextual Info: SEMICONDUCTOR KTA1962 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E ᴌHigh Collector Voltage : VCEO=-230V Min. C ᴌComplementary to KTC5242. J H ᴌRecommended for 80W High Fidelity Audio Frequency G

2SC5242

Abstract: 2SA1962 Toshiba 2SC5242
Contextual Info: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 POWER AMPLIFIER APPLICATIONS • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier

NPN Transistor 2sc5242

Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • • High Collector Breakdown Voltage : VCEO“ 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier

2SA1986

Abstract: 2SC5358
Contextual Info: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR 2SC5358 POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % 2 ,0± 0.3

Contextual Info: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

Contextual Info: SEMICONDUCTOR KTA1962 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. Q B K F A I FEATURES E High Collector Voltage : VCEO=-230V Min. C Complementary to KTC5242. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

Contextual Info: SEMICONDUCTOR KTA1962A TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. Q B K F A I FEATURES E High Collector Voltage : VCEO=-230V Min. C Complementary to KTC5242A. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

KTC5242A

Abstract: KTA1962A
Contextual Info: SEMICONDUCTOR KTA1962A TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=-230V Min. C Complementary to KTC5242A. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

transistor b 1560

Contextual Info: SEMICONDUCTOR KTB2530 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON APPLICATION. A N O FEATURES B Q K F ・Complementary to KTD1530 R G H I C J ・Recommended for 80W Audio Amplifier Output Stage. D MAXIMUM RATING Ta=25℃

KTC5242A

Abstract: KTA1962A
Contextual Info: SEMICONDUCTOR KTC5242A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962A. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

Contextual Info: SEMICONDUCTOR KTC5242 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. Q B K F A I FEATURES E ・High Collector Voltage : VCEO=230V Min. C ・Complementary to KTA1962. J H ・Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

Contextual Info: SEMICONDUCTOR KTC5242A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. Q B K F A I FEATURES E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962A. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

KTA1962

Abstract: KTC5242
Contextual Info: SEMICONDUCTOR KTA1962 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=-230V Min. C Complementary to KTC5242. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

KTA1962

Abstract: KTC5242 CE1210
Contextual Info: SEMICONDUCTOR KTC5242 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

2SA1986

Abstract: 2SC5358
Contextual Info: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C