AK80R1K2I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 800 V drain-source voltage, 1000 mΩ typical RDS(ON), 5 A continuous drain current, and low gate charge in TO-251 or TO-252 package. |
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SLF_H80R180GT
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Maplesemi
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800V N-Channel Multi-EPI Super-JMOSFET with 24A continuous drain current, 145mΩ RDS(on) at VGS = 10V, low gate charge of 66.5nC, and 100% avalanche tested for high efficiency power switching applications. |
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AK80R1K2
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 800 V drain-source voltage, 1000 mΩ typical RDS(ON), 6 A continuous drain current, and low gate charge for high-efficiency power conversion applications. |
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AK80R1K2D
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 800 V drain-source voltage, 1000 mΩ typical RDS(ON), 6 A continuous drain current, and low gate charge for high-efficiency power conversion applications. |
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SLB80R180GT
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Maplesemi
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800V N-channel Super-JMOSFET with 24A continuous drain current, 145mΩ RDS(on) at VGS = 10V, low gate charge of 66.5nC, and 160mJ avalanche energy rating in TO-263 package. |
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AK80R1K2K
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AK Semiconductor
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NCE80R1K2I and NCE80R1K2K are 800 V, 5 A N-channel super junction power MOSFETs with low RDS(ON) of 1000 mΩ typical, low gate charge, and TO-251/TO-252 packaging for high-efficiency power conversion applications. |
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AK80R1K2F
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 800 V drain-source voltage, 1000 mΩ typical RDS(ON), 6 A continuous drain current, low gate charge, and TO-263/TO-220 package options. |
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AK80R1K2I
