80MEG Search Results
80MEG Price and Stock
Nichicon Corporation RWA1E680MEGCAP ALUM POLY 68UF 20% 25V SMD |
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Nichicon Corporation RWA1C680MEGCAP ALUM POLY 68UF 20% 16V SMD |
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80MEG Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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UT8R2M39
Abstract: UT8R4M39 UT8R1M39 DQ380 10206 UT8ER1M39 PWR50
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: UT8R1M39, DQ380 10206 UT8ER1M39 PWR50 | |
UT8ER4M39Contextual Info: Standard Products UT8R1M39 40Megabit SRAM MCM UT8R2M39 80Megabit SRAM MCM UT8R4M39 160Megabit SRAM MCM Preliminary Data Sheet August 26, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M, or 4M x |
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: 111MeV-cm2/mg UT8ER4M39 | |
UT8R2M39
Abstract: UT8R4M39 UT8R1M39
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: 3x10-7 | |
8 lead side brazedContextual Info: Standard Products UT8R1M39 40Megabit SRAM MCM UT8R2M39 80Megabit SRAM MCM UT8R4M39 160Megabit SRAM MCM Preliminary Data Sheet June 25, 2010 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M, or 4M x |
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: 111MeV-cm2/mg 8 lead side brazed | |
Contextual Info: Standard Products UT8R1M39 40Megabit SRAM MCM UT8R2M39 80Megabit SRAM MCM UT8R4M39 160Megabit SRAM MCM Preliminary Data Sheet December 7, 2012 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M, or 4M x |
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: 3x10-7 | |
Contextual Info: Standard Products UT8ER1M39 40Megabit SRAM MCM UT8ER2M39 80Megabit SRAM MCM UT8ER4M39 160Megabit SRAM MCM Advanced Data Sheet December 19, 2008 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 1M, 2M, or 4M x |
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UT8ER1M39 40Megabit UT8ER2M39 80Megabit UT8ER4M39 160Megabit | |
UT8R2M39Contextual Info: Standard Products UT8R1M39 40Megabit SRAM MCM UT8R2M39 80Megabit SRAM MCM UT8R4M39 160Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M, or 4M x |
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: 111MeV-cm2/mg | |
RADSSContextual Info: Standard Products UT8R1M39 40Megabit SRAM MCM UT8R2M39 80Megabit SRAM MCM UT8R4M39 160Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M, or 4M x |
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: 3x10-7 RADSS | |
UT8ER2M39
Abstract: UT8ER4M39
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: 111MeV-cm2/mg UT8ER2M39 UT8ER4M39 | |
UT8R1M39Contextual Info: Standard Products UT8R1M39 40Megabit SRAM MCM UT8R2M39 80Megabit SRAM MCM UT8R4M39 160Megabit SRAM MCM Data Sheet January 2013 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M, or 4M x |
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UT8R1M39 40Megabit UT8R2M39 80Megabit UT8R4M39 160Megabit UT8R1M39: UT8R2M39: UT8R4M39: UT8R1M39, | |
Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2029/EL2029C 0,01 % 200 US Op A TflJ ' Gemi, O f 5 Stttblc F e a tu r e s G e n e ra l D e sc r ip tio n • Settling tim e for 10V swings to 0.1% of 100 ns; to 0.01% of 200 ns • High slew rate—900 V/ is • Large power bandwidth—5 M Hz |
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EL2029/EL2029C MIL-STD-883 EL2029 80Meg | |
t10-25 u2
Abstract: AMD 29050 AMD AM29050
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29050TM 32-bit, 80-megaflop 20-MHz 64-entry 1024-byte Am29050 Fusion29K Am29030 Am29040 t10-25 u2 AMD 29050 AMD AM29050 | |
Contextual Info: A m 29050 RISC Microprocessor with On-Chip Floating-Point Unit DISTINCTIVE CHARACTERISTICS • Full 32-bit, three-bus architecture ■ 55 million instructions per second MIPS sustained at 40 MHz a Advanced Micro Devices ■ 64-entry Memory Management Unit (MMU) |
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32-bit, 64-entry 1024-byte 80-megaflop 20-MHz -D000 Am29050 D257525 0G51D33 | |
MiniMON29K
Abstract: AM29050 AM29050-20GC Am29040 Am29243 U13124
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Am29050 32-bit, 80-megaflop 20-MHz 64-entry 1024-byte MiniMON29K AM29050-20GC Am29040 Am29243 U13124 | |
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intensifier
Abstract: VP Series 213F NV5004
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NV5004 NV5004 15100-500nADC intensifier VP Series 213F | |
future scope of wireless communicationContextual Info: Data Acquisition Texas Instruments Incorporated Interfacing op amps and analog-todigital converters By Bruce Carter Email: r-carter5@ti.com Advanced Linear Products, Op Amp Applications Introduction One of the most common questions asked of the TI HighSpeed Amplifiers Applications team is what op amp to use |
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SLYT104 future scope of wireless communication | |
Am29040
Abstract: Am29050 D13 E1 amd processor based Circuit Diagram MiniMON29K Am29050TM
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Am29050 64-entry 32-bit, 1024-byte 80-megaflop 20-MHz Am29000 Fusion29K Am29005 Am29040 D13 E1 amd processor based Circuit Diagram MiniMON29K Am29050TM | |
MIL-PRF-55182
Abstract: MIL-PRF-55182/9 tk633 MG650 MG655 MG660 MG680 MG710 MG750-15 500tc
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Rangeand10 Precision10 750Tel: 44caddock medical20electronics. countryderating870 MG680 MG710 IL110 MIL-PRF-55182 MIL-PRF-55182/9 tk633 MG650 MG655 MG660 MG710 MG750-15 500tc | |
EFTU11R8Mx
Abstract: EFTU11R8M UCC3580-1 TL331 TL331DBV ucc2580 EFTU14R0Mxx MH 7404 4Q 2002 Analog Applications Journal TRANSISTOR c104
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A070802 SLYT042 EFTU11R8Mx EFTU11R8M UCC3580-1 TL331 TL331DBV ucc2580 EFTU14R0Mxx MH 7404 4Q 2002 Analog Applications Journal TRANSISTOR c104 |