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80I-1000S
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Fluke
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - AC CURRENT OSCILLOSCOPE PROBE |
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27.52KB |
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80I-110S
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FLUKE
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Equipment - Electrical Testers, Current Probes, Test and Measurement, SCOPEMETER R PROBE AC/DC 1-100A |
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2 |
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80I-110S
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Fluke
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - AC/DC CURRENT PROBE, SCOPEMETR |
Scan |
PDF
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27.52KB |
1 |
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80I-400
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Fluke
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - PROBE, CURRENT, 400 AMPS, |
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27.52KB |
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80I-500S
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Fluke
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - AC CUR PROBE, OSCILLOSCOPE, 500 AMPS |
Scan |
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27.52KB |
1 |
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80I-600A
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Fluke
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - CURRENT PROBE ASSEMBLY |
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27.52KB |
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AK3080IA
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AK Semiconductor
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AK3080IA N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, RDS(ON) less than 6.5mΩ at VGS=10V, and low gate charge for high-frequency switching applications. |
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JST80IS-1200BW
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Jiangsu JieJie Microelectronics Co Ltd
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80A TRIAC with 1200V repetitive peak off-state and reverse voltage, suitable for AC switching in heating, motor control, and lighting applications; features snubberless operation for inductive loads and 2500 VRMS rated insulation. |
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AK70T680I
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AK Semiconductor
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N-Channel Super Junction Power MOSFET with 700 V VDS, 680 mΩ RDS(ON), 7 A continuous drain current, low gate charge, and TO-251/TO-252 package options for high-voltage power conversion applications. |
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HPM6E80IVM
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，2080KB SRAM，千兆以太网，4个PWM模块，17个UART，4个ADC，206个GPIO，AES-128/256，SM2/3/4，SHA-1/256。 |
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HPM6E80IGN
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，2080KB SRAM，千兆以太网，4ADC，206GPIO，AES-128/256，SM2/3/4，SHA-1/256。 |
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NCE65T680I
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NCEPOWER
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650 V N-Channel Super Junction Power MOSFET with 600 mΩ typical RDS(ON), 7 A continuous drain current, ultra-low gate charge, and TO-251 or TO-252 package options. |
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XL-HDB8080IR-T6A3
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XINGLIGHT
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42mil*42mil，红外940nm/无色透明胶体，8080支架，ROHS标准，MSL:2a-3级，EIA标准包装，SMT贴片自动化生产，适用于内窥镜、血氧仪、红外遥控器、摄像监控头、计数器、热成像、智能电表、红外光电开关、无线通信与信号传输、智能小车、机器人。 |
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NCE3080IA
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NCEPOWER
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NCE3080IA N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, RDS(ON) less than 6.5mΩ at VGS=10V, advanced trench technology for low on-resistance and gate charge, suitable for power switching and high frequency applications. |
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JST80IS-1600BW
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Jiangsu JieJie Microelectronics Co Ltd
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80 A TRIAC with 1600 V repetitive peak off-state and reverse voltage, suitable for AC switching in heating, motor control, and lighting applications, featuring snubberless operation for inductive loads and 2500 VRMS rated insulation. |
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HPM6280IEP
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，800KB SRAM，4096位OTP，128KB BOOT ROM，24/32768Hz振荡器，9UART，4SPI，4I2C，4LIN，USB 2.0 OTG，4CAN，3ADC，2DAC，108GPIO，AES-128/256，SM2/3/4，SHA-1/256，真随机数。 |
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NCE3080I
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NCEPOWER
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NCE3080I N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, RDS(ON) less than 6.5mΩ at VGS=10V, low gate charge, and high power switching capability in TO-251 package. |
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NCE70T680I
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NCEPOWER
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700 V NCE70T680I, NCE70T680K N-Channel Super Junction Power MOSFET with 680 mΩ RDS(ON), 7 A continuous drain current, low gate charge, and TO-251/TO-252 package. |
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AK3080I
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AK Semiconductor
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AK3080I N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, RDS(ON) less than 6.5mΩ at VGS=10V, and low gate charge for high efficiency switching applications. |
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HPM6280IPA
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HPMicro Semiconductor Co Ltd
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双核32位RISC-V，800KB SRAM，4096位OTP，128KB BOOT ROM，24/32768Hz振荡器，3PLL，XPI，2PWM，5定时器，9UART，4SPI，4I2C，4LIN，USB 2.0 OTG，4CAN，3ADC，2DAC，4比较器，108GPIO，AES-128/256，SM2/3/4，SHA-1/256，真随机数，NOR解密。 |
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AK3080IA
