8085 WIRING DIAGRAM Search Results

ac dc distribution boards diagram

Abstract: IC 8085 pin diagram IR LED infrared led AQY221N2S AQY221N2SX AQY221N2SZ
Contextual Info: RF Radio Frequency C (by) x R 10 Type FEATURES 4.3±0.2 .169±.008 1. In addition to lower output capacitance between terminals than ever before, the PhotoMOS relay achieves low ON-resistance. Output capacitance(C): 1.0pF (typ.) ON resistance(R): 9.5Ω (typ.)

AQY221N2VY

Contextual Info: RF Radio Frequency C (by) ✕ R 10 SSOP Type 4.45 .175 1.80 .071 2.65 .104 mm inch 1 4 2 3 UL CSA pending pending PhotoMOS RELAYS FEATURES TYPICAL APPLICATIONS 1. Reduced package size Lower surface has been reduced 60% and mounting space 40% compared to

AQY221N2S

Abstract: AQY221N2SX AQY221N2SZ IC 8085 pin diagram power supply tester schematic diagram
Contextual Info: CbyR-relay/C.fm 2 y [ W Q O O O N W R œ @ j œ @ ª V S W “ RF Radio Frequency C (by) x R 10 Type FEATURES 4.3±0.2 .169±.008 1. In addition to lower output capacitance between terminals than ever before, the PhotoMOS relay achieves low ON-resistance.

IC 8085 pin diagram

Abstract: AQY221N2VW circuit AQY221N2VY AQY221N2V AQY221N2VW
Contextual Info: RF Radio Frequency C (by) ✕ R 10 SSOP Type 4.45 .175 1.80 .071 2.65 .104 mm inch 1 4 2 3 UL CSA pending pending PhotoMOS RELAYS FEATURES TYPICAL APPLICATIONS 1. Reduced package size Lower surface has been reduced 60% and mounting space 40% compared to

AQW414EH

Abstract: AQW414EHA AQW414EHAX AQW414EHAZ AQW41
Contextual Info: GU-E 2 Form B AQW414EH TESTING Normally closed DIP8-pin economic type with reinforced insulation 6.4 .252 9.86 .388 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 GU-E 2 Form B (AQW414EH) FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V

AQW414EH

Abstract: AQW414EHA AQW414EHAX AQW414EHAZ
Contextual Info: AQW414EH TESTING GU General Use -E Type 2-Channel (Form B) Type PhotoMOS RELAYS FEATURES 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 control of low-level analog signals without distortion. 5. High sensitivity, high speed response. Can control a maximum 0.13 A load current with a 5 mA input current. Fast operation speed of 0.8 ms (typical).

8085 wiring diagram

Abstract: AQW414EH AQW414EHA AQW414EHAX AQW414EHAZ AQW4
Contextual Info: GU-E PhotoMOS AQW414EH TESTING General use and economy type. DIP (2 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW414EH) FEATURES 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 control of low-level analog signals without

IC 8085 pin diagram

Abstract: AQY221N3V AQY221N3VW AQY221N3VY
Contextual Info: RF Radio Frequency C (by) ✕ R 5 SSOP Type 4.45 .175 1.80 .071 2.65 .104 mm inch 1 4 2 3 UL CSA pending pending PhotoMOS RELAYS FEATURES TYPICAL APPLICATIONS 1. Reduced package size Lower surface has been reduced 60% and mounting space 40% compared to conventional 4-pin SOP type.

Contextual Info: GU-E PhotoMOS AQW414EH TESTING General use and economy type. DIP (2 Form B) 8-pin type. Reinforced insulation 5,000V type. FEATURES 6.4 .252 9.86 .388 GU-E PhotoMOS (AQW414EH) 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 5. High sensitivity, high speed

Contextual Info: GU-E 2 Form B AQW414EH TESTING Normally closed DIP8-pin economic type with reinforced insulation 6.4 .252 9.86 .388 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 Compliance with RoHS Directive GU-E 2 Form B (AQW414EH) FEATURES TYPICAL APPLICATIONS

AQY210EH

Abstract: AQY210EHA AQY210EHAX AQY210EHAZ AQY214EH AQY214EHA AQY214EHAX AQY214EHAZ
Contextual Info: AQY21❍EH TESTING PhotoMOS RELAYS GU General Use -E Type 1-Channel (Form A) 4-pin Type FEATURES 4.78 .188 6.4 .252 3.2±0.1 .126±.004 4.78 .188 6.4 .252 2.9 .114 mm inch 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced

AQW414

Abstract: AQW414A AQW414AX AQW414AZ
Contextual Info: PhotoMOS RELAYS GU General Use Type [2-Channel (Form B) Type] FEATURES 9.78 .385 1. Approx. 1/2 the space compared with the mounting of Two 1 Form B photo MOS units 6.4 .252 5. Controls load currents up to 0.13 A with an input current of 5 mA 6. High speed switching: operate time

AQW414EH

Abstract: AQW414EHA AQW414EHAX AQW414EHAZ Matsua led catalog
Contextual Info: AQW414EH TESTING GU General Use -E Type 2-Channel (Form B) Type PhotoMOS RELAYS FEATURES 3.2 .126 6.4 .252 9.86 .388 control of low-level analog signals without distortion. 5. High sensitivity, high speed response. Can control a maximum 0.13 A load current with a 5 mA input current. Fast operation speed of 0.8 ms (typical).

8085 transistor

Contextual Info: HS PhotoMOS AQV234 Highest sensitivity LED operate current: typical 0.31A FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power

AQV254R

Abstract: AQV254RA AQV254RAX AQV254RAZ 8085
Contextual Info: HE High-function Economy Type [1-Channel (Form A) Type] —With LED Display— FEATURES 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.9±0.2 .154±.008 8.8±0.05 .346±.002 PhotoMOS RELAYS 6.4±0.05 .252±.002 3.6±0.2 .142±.008 mm inch 1 6 2 5 3 4 • Low on resistance and LED display

AQW414EH

Abstract: AQW414EHA AQW414EHAX AQW414EHAZ
Contextual Info: GU-E 2 Form B AQW414EH TESTING Normally closed DIP8-pin economic type with reinforced insulation GU-E 2 Form B (AQW414EH) AQW414EH 6.4 .252 9.86 .388 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V

Contextual Info: GU-E PhotoMOS AQW414EH TESTING General use and economy type. DIP (2 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW414EH) FEATURES 6.4 .252 9.86 .388 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 control of low-level analog signals without

AQW454

Contextual Info: High sensitivity and low on-resistance. DIP 2 Form B 8-pin type. HE PhotoMOS (AQW454) FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4x(L) 9.78×(H) 3.9 mm (W) .252×(L)

IC 8085 pin diagram

Abstract: 8085 8085 transistor 8085 temperature IC 8085 AQV234 AQV234A AQV234AX AQV234AZ
Contextual Info: PhotoMOS RELAYS HS High Sensitivity Type [1-Channel (Form A) Type] FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power supply to drive the power MOSFET

AQW454

Abstract: AQW454A AQW454AX AQW454AZ
Contextual Info: HE High-function Economy Type [2-Channel (Form B) Type] PhotoMOS RELAYS FEATURES 9.78 .385 6.4 .252 3.9±0.2 .154±.008 6.4 .252 9.78 .385 3.6±0.2 .142±.008 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4x(L) 9.78×(H) 3.9 mm (W) .252×(L)

AQW454

Abstract: AQW454A AQW454AX AQW454AZ 090909J
Contextual Info: HE 2 Form B AQW454 Normally closed (2 Form A) DIP6-pin type Low on-resistance with 400V load voltage AQW454 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 Height includes standoff mm inch 1 8 2 7 3 6 4 5 HE 2 Form B (AQW454) FEATURES TYPICAL APPLICATIONS

AQV234

Abstract: AQV234A AQV234AX AQV234AZ
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✥✧✤ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M HS 1 Form A AQV234 DIP6-pin type featuring high sensitivity HS 1 Form A (AQV234) 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6

AQV254R

Abstract: AQV254RA AQV254RAX AQV254RAZ
Contextual Info: HE High-function Economy Type [1-Channel (Form A) Type] —With LED Display— 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.6±0.2 .142±.008 mm inch FEATURES • Low on resistance and LED display

Contextual Info: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) AQV414 FEATURES 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3. High sensitivity and low onresistance Can control max. 0.15 A load current with 5 mA input current. 4. Low-level off state leakage current