808 NM 300 MW LD Search Results

LDM_0808_300M_91

Contextual Info: LDM-0808-300m-91 TECHNICAL DATA High Power Infrared Laser Diode Features • CW Output Power: 300 mW • Typical 808 nm Emission Wavelength • High-efficiency Quantum Well Structure • TO5 Package Applications • Solid-state Laser Pumping • Medical Usage

808nm laser

Abstract: 808nm 500mw 808nm 500mW laser diode 9mm
Contextual Info: LUMEX laser diodes 808nm OED-LDH8004F OED-LDH8005F Features • • • • Visible lig h t: X - 808 nm Typ. Output power: 200mW/500mW, CW High Efficiency MOCVD Quantum Well Design Standard TO-5 package (9mm 0 ) Applications • Diode pump solid state laser

808nm 500mw

Abstract: ADL-80V03TL 80V03
Contextual Info: ADL-80V03TL Infrared Laser Diode 6-2D-LD80-010_Rev.00 808nm 500mW High Power Operation • Features 1. Low operation current 2. High pumping efficiency 3. Stable wavelength 4. High reliability • Applications 1. Pumping source for DPSS green laser 2. Medical applications

JDSU CQF935 DFB

Abstract: CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935
Contextual Info: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an

JDSU CQF935 DFB

Abstract: JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935
Contextual Info: Product Bulletin 50 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/808 Series The JDS Uniphase CQF935/808 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used as a wavelength selected source in combination with an

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
Contextual Info: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm

ADL-80Y04TL

Abstract: 4050C
Contextual Info: ADL-80Y04TL Infrared Laser Diode 6-2D-LD80-009_Rev.01 808nm 200mW High Power Operation • Features 1. Low threshold current 2. Low operation current 3. High pumping efficiency 4. Stable wavelength 5. High reliability • Applications 1. Pumping source for DPSS green laser

Contextual Info: ADL-80Y04TZ Infrared Laser Diode 6-2D-LD80-001_Rev.00 808nm 200mW High Power Operation • Features 1. Low threshold current 2. Low operation current 3. High pumping efficiency 4. Stable wavelength 5. High reliability • Applications 1. Pumping source for DPSS green laser

1090D

Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

808 nm 1000 mw

Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

Laser-Diode 808

Abstract: RLT80810G 808 nm 300 mW LD
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 +/- 3 nm typ., singlemode

808 nm 1000 mw 2 pins

Abstract: Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
Contextual Info: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.

SLD323XT

Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
Contextual Info: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

808 nm 100 mw

Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.

laser diode 200mw to-18

Abstract: 200MW
Contextual Info: LCA808200M9N Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS Tc=25 oC Features • Index Guided MQW Structure • Wavelength : 808 nm (Typ.) • Optical Power : 200 mW CW • Threshold Current : 80 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) DESCRIPTION

808nm 500mw

Abstract: 808 nm 1000 mw laser diode u-ld-80 808nm laser diode laser diode 808nm 808nm 500mw laser diode
Contextual Info: U-LD-80E046D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, no PD, easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)

U-LD-80C046D-PRELIMINARY

Abstract: 808nm 300mW 808nm 300mw laser diode 808nm laser 300mw laser diode 300mw 808nm 300 mw laser diode laser diode 808nm Laser Diode 808nm 300mw
Contextual Info: U-LD-80C046D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80C046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18（ψ5.6mm ）,With Pb free glass cap,no PD (3) Power Output: 300mW ■External dimensions(Unit : mm)

U-LD-80E044D-preliminary

Abstract: 808nm 500mw u-ld-80 500MW 808nm laser diode
Contextual Info: U-LD-80E044D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E044D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With no glass cap, no PD, easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)

808nm laser diode

Abstract: 808nm 500mw laser diode 808nm 500mw 808nm 300 mw laser diode u-ld-80 808nm laser diode 808nm 80E04
Contextual Info: U-LD-80E045A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E045A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With no glass cap, PD,easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)

808nm laser diode

Abstract: 808nm 808nm 500mw 300 mw IR Laser Diode 808nm 300 mw laser diode 808nm laser 820 nm laser diode 808 nm 1000 mw 808nm 500mw laser diode
Contextual Info: U-LD-80E041A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm)

808nm 500mw

Abstract: ADL-80V01NL 808nm 500mw laser diode 80V01 C 828
Contextual Info: AlGaAs Infrared Laser Diode ADL-80V01NL DATE：2006/03/02 Ver 2.0 ★808nm 500mW 9φ TO-Type High Power Laser Diode • Features 1. Low operation current 2. Cost effective • Applications 1. Pumps for solid state lasers 2. Medical use • Absolute maximum ratings

SLD300

Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Contextual Info: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.

808nm laser diode

Abstract: u-ld-80
Contextual Info: U-LD-80B049D UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80B049D •Specifications 1 Device: Laser Diode (2) Structure: TO-18（ψ5.6mm ),with no glass cap,no PD,easy decap (3) Power Output: 200mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)