808 NM 100 MW Search Results
808 NM 100 MW Datasheets Context Search
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RLT808M-1.5WFCContextual Info: RLT808M-1.5WFC TECHNICAL DATA Multi-Mode 14-Pin Butterfly Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 1500 mW Package: 14-Pin Butterfly, Thermistor, TEC Fiber: 100µm core diameter |
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RLT808M-1 14-Pin RLT808M-1.5WFC | |
RLT808M-3WFCContextual Info: RLT808M-3WFC TECHNICAL DATA Multi-Mode 14-Pin Butterfly Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 3000 mW Package: 14-Pin Butterfly, Thermistor, TEC Fiber: 100µm core diameter |
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RLT808M-3WFC 14-Pin RLT808M-3WFC | |
808 nm 100 mw
Abstract: PD-LD SANYO DL DL-LS2032 DL-LS2032A DL-LS2032B DL-LS2032C CW laser diode 808 nm
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DL-LS2032 100mW DL-LS2032A DL-LS2032B DL-LS2032C 808 nm 100 mw PD-LD SANYO DL DL-LS2032 DL-LS2032A DL-LS2032B DL-LS2032C CW laser diode 808 nm | |
DL-7141-035A
Abstract: DL-7141-035 Tottori Sanyo Electric DL-7141-035 808 nm 100 mw
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DL-7141-035 100mW DL-7141-035A DL-7141-035B DL-7141-035C DL-7141-035A DL-7141-035 Tottori Sanyo Electric DL-7141-035 808 nm 100 mw | |
Laser-Diode 808
Abstract: laserdiode Laser-Diode RLT808150GO
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RLT808150GO 10x30 Laser-Diode 808 laserdiode Laser-Diode RLT808150GO | |
RLT808500GO
Abstract: 808 nm 100 mw Laser-Diode 808
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RLT808500GO 10x30 RLT808500GO 808 nm 100 mw Laser-Diode 808 | |
Contextual Info: 808/830 nm Broad Area Laser Diode Product Family Specification Sheet The M8xx series of Broad Area Laser Diodes from Axcel Photonics offer high CW optical power from a 100 micron multi-mode aperture and high brightness with industry leading reliability. This series of devices is |
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D-82140 | |
Contextual Info: LCA80830S9N OPTICAL AND ELECTRI CAL CHARACTERISTICS Tc=25ºC DESCRI PTION SYMBOL MIN . TYPICAL MA X. TEST CONDIT ION Lasing Wavelength (nm) p 800 808 820 Po=30mW Threshold Curr ent (mA) Ith 30 50 70 Po=30mW Operation Curr ent (mA) Iop 60 80 100 Po=30mW |
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LCA80830S9N lca80830s9n | |
3w 9 pin laser
Abstract: SDL laser diode manual JDSU 2400 SDL Laser diode 2462-p1 0/SDL-2362-P1
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2400on 2400DIODELASER 498-JDSU 5378-JDSU 3w 9 pin laser SDL laser diode manual JDSU 2400 SDL Laser diode 2462-p1 0/SDL-2362-P1 | |
808 nm 1000 mw 2 pins
Abstract: 808 nm 1000 mw laser diode DIODE 809 CW laser diode 808 nm 2362-P1 2382-P1 jdsu 2380
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2300DIODELASER 5378-JDSU 808 nm 1000 mw 2 pins 808 nm 1000 mw laser diode DIODE 809 CW laser diode 808 nm 2362-P1 2382-P1 jdsu 2380 | |
M9-808-0150-S50
Abstract: C2-808-0100-S50 808nm 100mw laser diode M9-808-0150-S5P
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ss-808-pppp-s50 M9-808-0150-S50 C2-808-0100-S50 808nm 100mw laser diode M9-808-0150-S5P | |
808nm 100mw laser diodeContextual Info: Product Specifications Features 808 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. Description: • High Quality, Reliability, & Performance Applications • Illumination • Laser Display • Printing • Sensing • Medical Applications • Imaging |
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HW/axcel/sm/808nm-sm-laser-diode 808nm 100mw laser diode | |
JDSU CQF935 DFB
Abstract: CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935
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CQF935/808 RWR-030-42-01083-WWM, JDSU CQF935 DFB CQF935 JDS uniphase CQF935 uniphase CQF935 Laser Diode 808 2 pin 1000 mw datasheets JDS uniphase CQF935 808 nm 1000 mw 2 pins GR-468-CORE 808 nm 1000 mw laser diode JDSU CQF935 | |
JDSU CQF935 DFB
Abstract: JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935
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CQF935/808 JDSU CQF935 DFB JDSU CQF935 JDS uniphase CQF935 uniphase CQF935 CQF935 | |
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Contextual Info: ROITHNER LASERTECHNIK GmbH PRESENTS. NEW! OPTICALLY PUMPED MID-IR POWER LEDS MIRO33A6, 3.3 um, 0.75 mW at 0.3A pulse, 0.22 mW cw at 70 mA, 120°, M10x1 thread, datasheet MIRO39A6, 3.9 um, 0.65 mW at 0.3A pulse, 0.19 mW cw at 70 mA, 120°, M10x1 thread, datasheet |
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MIRO33A6, M10x1 MIRO39A6, KA-7301B, RLDH808-1200-5, 2006-September-18 | |
G081PU1750MContextual Info: G081PU1750M TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 750 mW • Typical 808 nm Emission Wavelength • High Reliability • High Efficiency Applications • Laser Pumping • Medical Usage • Printing • Heating |
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G081PU1750M g081pu1750m | |
jdsu optic switch
Abstract: 808 nm 100 mw 2445-G1 laser diode for free space communication TO56 package Laser Diode 808 nm 5w CW laser diode 808 nm 2400150 TO-56 package laser diode 2455-G1
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498-JDSU 5378-JDSU 24XXDIODELASER jdsu optic switch 808 nm 100 mw 2445-G1 laser diode for free space communication TO56 package Laser Diode 808 nm 5w CW laser diode 808 nm 2400150 TO-56 package laser diode 2455-G1 | |
to56Contextual Info: COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features • 35 – 200 µm aperatures available • High-efficiency, MOCVD quantum well design • Open heat sink packages and encapsulated devices • High reliability The 24xx series diode lasers represent a breakthrough in high continuous wave |
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498-JDSU 5378-JDSU 24XXDIODELASER to56 | |
Contextual Info: COMMERCIAL LASERS Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm 24xx Series Key Features • 35 – 200 µm aperatures available • High-efficiency, MOCVD quantum well design • Open heat sink packages and encapsulated devices • High reliability The 24xx series diode lasers represent a breakthrough in high continuous wave |
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498-JDSU 5378-JDSU 24XXDIODELASER | |
DL-8141-002Contextual Info: INFRARED LASER DIODE DL-8141-002 Ver.1 Feb. 2007 Features Package • Lasing wavelength : 808 nm Typ. • Single longitudinal mode • High output power : 200 mW at 50°C • Low threshold current : Ith = 50 mA (Typ.) • Fundamental transverse mode • Package : ø5.6mm |
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DL-8141-002 200mW 100mW DL-8141-002 | |
IR Laser diodeContextual Info: IR Laser Diode Te c h n i c a l D a t a LCA808500M9N ABSOLUTE MAXIMUM RATINGS Tc=25ºC Features DESCRIPTION SYMBOL RATED VALUE Po 500 • Index Guided MQW Structure Optical Power (mW) • Wavelength : 808 nm (Typ.) Operation Temperature (ºC) Top -10 to +50 |
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LCA808500M9N lca808500m9n IR Laser diode | |
DL-LS2075Contextual Info: INFRARED LASER DIODE DL-LS2075 Ver.3 Sep. 2005 Features Package • Lasing wavelength : 808 nm Typ. • Single longitudinal mode • High output power : 200 mW at 50°C • Low threshold current : Ith = 50 mA (Typ.) • Fundamental transverse mode • Package : ø5.6mm |
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DL-LS2075 200mW 100mW DL-LS2075 | |
HLDH-650-A-10-01
Abstract: HLDH-650-A1001 HLDH-808-B20001 HLDH-660-A2001 laser diode TO-18 package HLDH-808-B-200-01 HLDH-780-A-90-01 HLDH-660-A5001 HLDP-650-A-5-02 HLDH-660-A-20-01
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HLDD-650-A-7-01 HLDP-635-A-5-01 HLDP-650-A-5-01 HLDP-650-A-5-02 HLDH-650-A-10-01 HLDP-780-A-3-01 HLDH-650-A1001 HLDH-808-B20001 HLDH-660-A2001 laser diode TO-18 package HLDH-808-B-200-01 HLDH-780-A-90-01 HLDH-660-A5001 HLDH-660-A-20-01 | |
Laser Diode 808 2 pin 1000 mw
Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
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