808 NM Search Results
808 NM Price and Stock
Texas Instruments TMS320F2808NMFSIC MCU 32BIT 128KB FLSH 100NFBGA |
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TMS320F2808NMFS | Tray | 184 |
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TMS320F2808NMFS | 182 |
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Texas Instruments TMS320F2808NMFAIC MCU 32BIT 128KB FLSH 100NFBGA |
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TMS320F2808NMFA | Tray | 184 |
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TMS320F2808NMFA | 208 |
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TMS320F2808NMFA | 4,830 |
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ABLIC Inc. S-80833CNMC-B8ST2GSupervisory Circuits 3.3V 1.3uA N-Ch Open |
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S-80833CNMC-B8ST2G | 5,794 |
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ABLIC Inc. S-80845CNMC-B86T2GSupervisory Circuits 4.5V 0.9uA N-Ch Open |
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S-80845CNMC-B86T2G | 4,830 |
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ABLIC Inc. S-80824CNMC-B8JT2GSupervisory Circuits VOLTAGE DETECTOR |
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S-80824CNMC-B8JT2G | 3,000 |
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808 NM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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808 nm
Abstract: RLTMDL_808_3000-5000MW
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RLTMDL-808 5000mW 264VAC 3000-5000mw 808 nm RLTMDL_808_3000-5000MW | |
Contextual Info: Preliminary Data Sheet High Power CW Laser Diode LCG-808-1000M-9N Features - High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ Applications - Medical Printing Material Processing |
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LCG-808-1000M-9N LCG-808-1000M-9N | |
RLCO-808-2000-TO3Contextual Info: RLCO-808-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 2 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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RLCO-808-2000-TO3 RLCO-808-2000-TO3 | |
Contextual Info: 808 nm High-Efficiency Single Emitters Compound Photonics’ “Generation C” 808 nm pump lasers ofer over 55% power conversion, low threshold, high slope eiciency, and excellent stability over temperature. The iber-coupled devices ofer 3.5 watts ex-iber in |
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GR-468. XM6-808C-10-353 XM6-808C-20-35case QS4349 | |
Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BK81-20H Vorläufiges Datenblatt / Preliminary Datasheet Besondere Merkmale Features • • • • • Unmontierter Laserbarren |
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BK81-20H | |
GDOY7042Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 1200 W cw bei 808 nm Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm SPL E20N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 20 Laserbarren auf Mikrokanalkühler |
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E20N81G2 GDOY7042 | |
Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm SPL BG81-9S, SPL BG81-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges, kompressiv verspanntes |
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BG81-9S, BG81-2S | |
RLCO-808-5000-TO3Contextual Info: RLCO-808-5000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 5 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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RLCO-808-5000-TO3 RLCO-808-5000-TO3 | |
Contextual Info: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Un-mounted Laser Bars, 82.5% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-5S Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features • • • • • Unmontierter Laserbarren |
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BS81-5S | |
Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BG81-9S, SPL BG81-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur |
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BG81-9S, BG81-2S | |
Laser Diode 808 2 pin 1000 mw
Abstract: CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode
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LCG-808-1000M-9N lcg-808-1000m-9n Laser Diode 808 2 pin 1000 mw CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode | |
RLCO-808-0500-FContextual Info: RLCO-808-0500-F TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 500 mW Package: 4-pin DIL Specifications Item Optical Specifications CW Output Power |
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RLCO-808-0500-F SMA-905 RLCO-808-0500-F | |
Contextual Info: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Un-mounted Laser Bars, 82.5% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-9S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 75 Emittern (82.5% Füllfaktor) |
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BS81-9S | |
Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BK81-12S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 25 Emittern (50% Füllfaktor) |
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BK81-12S | |
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Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement |
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LCG-808-1000M-9N lcg-808-1000m-9n | |
Contextual Info: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement |
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LCG-808-1000M-9N lcg-808-1000m-9n | |
RLCO-808-3000-TO3Contextual Info: RLCO-808-3000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 3 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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RLCO-808-3000-TO3 RLCO-808-3000-TO3 | |
GDOY7031Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 450 W qcw bei 808 nm Actively Cooled Diode Laser Bar, 450 W qcw at 808 nm SPL E03N81S9 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 3 Laserbarren auf Mikrokanalkühler |
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E03N81S9 GDOY7031 | |
BS816Contextual Info: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Unmounted Laser Bars, 82.5% Filling Factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-6 Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 75 Emittern (82.5% Füllfaktor) |
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BS81-6 BS816 | |
Contextual Info: Unmontierte Laserbarren, 30% Füllfaktor, 808 nm Unmounted Laser Bars, 30% Fill-Factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BX81-2S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 19 Emittern (30% Füllfaktor) |
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BX81-2S | |
GDOY7041Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 60 W cw bei 808 nm Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01Y81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Laserstrahlung durch FAC-Linse • Laserbarren auf Mikrokanalkühler |
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E01Y81G2 GDOY7041 | |
GDOY7044
Abstract: MATERIAL SAFETY
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MY81S9 GDOY7044 MATERIAL SAFETY | |
GDOY7041Contextual Info: Aktiv gekühlter Diodenlaser-Barren, 60 W cw bei 808 nm Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserbarren auf Mikrokanalkühler • Für Dauerstrich- CW und |
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E01N81G2 GDOY7041 | |
GDOY7044Contextual Info: Passiv gekühlter Diodenlaser-Barren, 35 W cw bei 808 nm Passively Cooled Diode Laser Bar, 35 W cw at 808 nm SPL MY81X2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter |
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MY81X2 GDOY7044 |