8050 D H Search Results

semiconductor mps 8050 d

Abstract: MPS 8050 D MPS 8050 B K MPS 8050 hFE 8050 K MPS 8050 c C 8050 d kmps8050 K MPS 8050 d Korea Electronics
Contextual Info: SEMICONDUCTOR MPS8050 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8050 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8050 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.

Contextual Info: 1/2 U LT R A H I G H C U R R E N T W O U N D I N D U C T O R S BDS-6050, BDS-8050, BDS-1050 • BDS-6050 OFFERS 10µH AT 1.45A TO 220µH AT 350mA • BDS-8050 OFFERS 10µH AT 1.44A TO 330µH AT 290mA • BDS-1050 OFFERS 10µH AT 2.38A TO 560µH AT 320mA BDS-6050 POWER INDUCTORS

BR 8050 D

Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
Contextual Info: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type

BR 8050 D

Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D
Contextual Info: 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

GSMBT8050

Abstract: he 8050
Contextual Info: ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 8050 NP N E PITAXI AL T RANSI STOR Description The GSMBT8050 is designed for general purpose amplifier applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0.10 0.80 1.00 1.80 2.20

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

transistor br 8050

Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
Contextual Info: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

vtc amplifier 20 30 A

Abstract: multiplexor 2 inputs gauge 8050 VTC PLCC
Contextual Info: 1^1 VW VM 8050 Y J S J i? * .;. d ig ita l a r e a d e t e c t o r 950801 ADVANCE INFORMATION FEATURES 9-Bit DAC Track and Hold Circuitry Zero-Cross Detector Full-Wave Rectifier Low-Power Mode Typical Power Dissipation = 250 mW Adjustable AGC Reference Serial Digital Data Output

st 8050d

Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

qpsk transmitter

Abstract: qpsk transmitter block diagram TDA8050 Philips FA 145 TDA8050T qpsk modulation digital transmitter
Contextual Info: P hilips S em ico n d uctors Product sp ecification Q P S K tra n s m itter T D A 8050 FEATURES Two PLLs are incorporated, the first PLL includes: • P rogram m able gain • Fixed main d ivid e r • PLL controlled ca rrie r frequency • C rystal o scillator and its program m able reference

Y14SM

Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
Contextual Info: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8030 M O C 8050 6 -P in D IP O p t o is o la t o r s Darlington Output These devices consist of gallium arsenide infrared em itting diodes optically coupled to m onolithic silicon photodarlington detectors.

C8050

Contextual Info: m r— MOC8050 Infineon Photodarlington Optocoupler technologies D im ensions in inches m m pin one ID Î 248 (6.30) 256 (6.50) I DESCRIPTION The M O C 8050 is an o p tica lly c o u p le d isolator w ith a G allium A rse nid e infrared em itter and a silicon

qpsk transmitter block diagram

Abstract: qpsk transmitter B804 BB804 TDA8050 TDA8050T 4 shift QPSK
Contextual Info: P hilips S em ico n d uctors O b jective sp ecification Q P S K tra n s m itter T D A 8050 It includes tw o double balanced mixers, a sym m etrical V .C .O with 0-90 deg re e s signal generation fo r m odulation, a phase locked loop fo r IF frequency control, a conversion

RA 8040

Abstract: st 8050
Contextual Info: an H a rris I M J R U R G 8040, R U R G 8050, RURG8060 S E M I C O N D U C T O R Aprii ,9 9 5 80A, 400V - 600V Ultrafast Diodes Package Features • Ultrafast with Soft Recovery . .<75ns • Operating Tem p eratu re. . . . ,+175°C • Reverse Voltage Up To . . . .

200 watt audio ic

Abstract: ic 8050 8050h
Contextual Info: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures

c8050d

Abstract: C 8050 d C8050 C-8050 d 8050 D
Contextual Info: MOTOROLA O rder this docum ent by M O C 8050/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL ® CSA SETI SEM K O DEMKO NEMKO BABT M OC8030 M OC8050 [C TR = 300% Min] G lobalO ptoisolator 6-P in DIP Optoisolators Darlington Output No Base Connection [C TR = 500% Min]

h 8550 pnp transistor

Contextual Info: 8550 G E N E R A L D E S C R IP T IO N :- Hie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. A BSO LU T E M A X IM U M R A T IN G S TO-92A Note 1 Maximum Temperatures