800V PNP Search Results

1361

Abstract: LT1361 LT1354 LT1359 LT1360 LT1363 LT1365 1361 transistor npn g1345
Contextual Info: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain-Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

Contextual Info: LT1361/LT1362 Dual and Q uad 50MHz, 800V/ns O p Amps KOTURCS DCSCRIPTIOH • 50MHz Gain-Bandwidth ■ 800V/ .is Slew Rate ■ 5mA Maximum Supply Current per Amplifier The LT1361/LT1362 are dual and quad low power high ■ Unity-Gain Stable current and higher slew rate than devices with comparable

1360 marking

Abstract: lt1360 SFH205 LT1354 LT1359 LT1360CN8 LT1363 ltc 1360 marking 909 amp
Contextual Info: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

LT1360/1/2

Contextual Info: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

Contextual Info: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

1361 transistor npn

Abstract: LT1354 LT1359 LT1360 LT1361 LT1363 LT1365 1361
Contextual Info: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

LT1360CN8 IC

Contextual Info: _LT1360 50MHz, 800V/|a,s O p A m p F€OTUR€S D CSCRIPTIOn • 50MHz Gain-Bandwidth ■ 800V/|iS Slew Rate ■ 5mA Maximum Supply Current The LT1360 is a high speed, very high slew rate opera­ ■ 9nV/VHz Input Noise Voltage age, lower input bias current and higher DC gain than

Contextual Info: / T L i n e A ß TECH NO LO GY í s í 50MHz, 800V/jis O p A m p F€fiTUR€S D C S C M P T IO n • 50MHz Gain-Bandwidth ■ 800V/ js Slew Rate ■ 5mA Maximum Supply Current The LT1360 is a high speed, very high slew rate opera­ tional amplifierwith excellent DC performance. The LT1360

transistor marking N1

Abstract: jc86 S10XXXH
Contextual Info: S10xxxH  SCR FEATURES IT RMS = 10A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S10xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

transistor marking N1

Contextual Info: S08xxxH  SCR FEATURES IT RMS = 8A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S08xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

S2516

Abstract: transistor marking N1
Contextual Info: S25xxxH  SCR FEATURES IT RMS = 25A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

transistor marking N1

Abstract: S04XXXH
Contextual Info: S04xxxH  SCR FEATURES IT RMS = 4A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S04xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

transistor marking N1

Contextual Info: S06xxxH  SCR FEATURES IT RMS = 6A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S06xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

S16XXXH

Contextual Info: S16xxxH  SCR FEATURES IT RMS = 16A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

transistor marking N1

Abstract: 3016p
Contextual Info: S30xxxH  SCR FEATURES IT RMS = 30A VDRM = 800V to 1200V High surge current capability K A G DESCRIPTION The S30xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

transistor marking N1

Abstract: S4016 S40XXXH
Contextual Info: S40xxxH  SCR FEATURES IT RMS = 40A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S40xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated

SCR 800V 25A

Contextual Info: F0810xH  FAST SWITCHING SCR FEATURES IT RMS = 8A VDRM = 200V to 800V tq = 20µs max K A G DESCRIPTION The F0810xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for high frequency switching applications. TO220

RT 0100

Abstract: 1amn scr Igt 1mA 0398C X04XXX X0403
Contextual Info: X04xxxF SENSITIVE GATE SCR FEATURES IT RMS = 4A VDRM = 400V to 800V Low IGT < 200µA DESCRIPTION K The X04xxxF series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required,

Contextual Info: / = 7 SGS-THOMSON ^ 7 # ® ILiET^OlDGS S25XXXH SCR FEATURES • It rms = 25A - V drm = 200V to 800V ■ High surge current capability DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

P0201

Contextual Info: P0201xA P0202xA  SENSITIVE GATE SCR FEATURES IT RMS = 0.8A VDRM = 500V to 800V Low IGT ≤ 20 µA max to < 200 µA K G A DESCRIPTION The P020xxA series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose

Contextual Info: FS08.D STANDARD SCR DPAK Plastic On-State Current 8 Amp Gate Trigger Current 0.5 mA to 15 mA Off-State Voltage 200 V ÷ 800V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: SGS-THOMSON KiODOlHlOilLiOir^OOiflOOi S0602xH SENSITIVE GATE SCR FEATURES = 6A > V drm = 200V to 800V • Low Ig t < 200 lA ■ It ( r m s DESCRIPTION The S0602xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

X2N SCR

Abstract: X2M ST st x2n X2B marking X2B SCR X0202MN X0203BN X0202BN X0203NN X0205BN
Contextual Info: X02xxxN SENSITIVE GATE SCR FEATURES IT RMS = 1.4A VDRM = 200V to 800V Low IGT < 200 µA A K A G DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount

JIS B 0209 general

Abstract: PW01 SCR PNPN CH85 S12XXX S12XXXH
Contextual Info: r z 7 SGS-THOMSON ^ 7 # K LICTH0HC1 S12XXXH SCR FEATURES =12A > V drm=200V to 800V • High surge current capability ■ It rm s DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose