800V MOSFET Search Results

p7nk80zfp

Abstract: P7NK80 p7nk80z STP7NK80ZFP STP7NK80Z STB7NK80Z STB7NK80Z-1 STB7NK80ZT4 p7nk80zf
Contextual Info: STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP7NK80Z 800V < 1.8Ω 5.2A STP7NK80ZFP 800V < 1.8Ω 5.2A

NTE2387

Contextual Info: NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

STP7NC80ZFP

Contextual Info: STP7NC80Z - STP7NC80ZFP STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP7NC80Z/FP 800V < 1.5Ω 6.1 A STB7NC80Z-1 800V < 1.5Ω 6.1 A • TYPICAL RDS(on) = 1.3Ω

6NC80Z

Abstract: L9 Zener STB6NC80Z-1 STP6NC80Z STP6NC80ZFP stp6nc80z-1 6nc80
Contextual Info: STP6NC80Z - STP6NC80ZFP STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z-1 800V < 1.8 Ω 5.4 A TYPICAL RDS(on) = 1.5 Ω

L9 Zener

Abstract: STP7NC80ZFP 7NC80Z W 7NC80Z
Contextual Info: STP7NC80Z - STP7NC80ZFP STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC80Z/FP 800V < 1.5Ω 6.1 A STB7NC80Z-1 800V < 1.5Ω 6.1 A 3 • ■ ■ ■ ■ TYPICAL RDS(on) = 1.3Ω

59 L2 zener

Abstract: L9 Zener STB6NC80Z STB6NC80Z-1 STP6NC80Z STP6NC80ZFP
Contextual Info: STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP6NC80Z/FP 800V < 1.8 Ω 5.4 A STB6NC80Z/-1 800V < 1.8 Ω 5.4 A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω

4NC80Z

Abstract: L9 Zener STB4NC80Z-1 STP4NC80Z STP4NC80ZFP
Contextual Info: STP4NC80Z - STP4NC80ZFP STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z-1 800V < 2.8 Ω 4A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt AND CAPABILITY

SSH8N80A

Contextual Info: N-CHANNEL POWER MOSFET SSH8N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V

mosfet 10a 800v

Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
Contextual Info: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V

W18NK80Z

Abstract: w18nk80 mosfet w18nk80z STW18NK80Z JESD97 w18nk 920 diode zener
Contextual Info: STW18NK80Z N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW18NK80Z 800V <0.38Ω 19A 350W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

802r8kn

Contextual Info: D TO-220 G APT802R4KN APT802R8KN S 800V 4.7A 2.40 Ω 800V 4.4A 2.80 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS APT802R4KN APT802R8KN UNIT Drain-Source Voltage

W13NK80Z

Abstract: w13nk80 JESD97 STW13NK80Z
Contextual Info: STW13NK80Z N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW13NK80Z 800V <0.65Ω 12A 230W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

STW9NB80

Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: R8005ANJ Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

ZENER DIODE IN 47 45A

Abstract: JESD97 STE45NK80ZD
Contextual Info: STE45NK80ZD N-channel 800V - 0.11Ω - 45A ISOTOP SuperFREDmesh MOSFET General features Type VDSS RDS on ID Pw STE45NK80ZD 800V <0.13Ω 45A 600W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility

8075bn

Abstract: apt8075bn 8090BN APT8090BN
Contextual Info: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω APT8090BN 800V 12.0A 0.90Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS APT 8075BN APT 8090BN UNIT Drain-Source Voltage

8N80

Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 IXFH8N80 125OC 08N80 diode A2 9
Contextual Info: Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: KSM4N80 800V N-Channel MOSFET TO-220 Features • • • • • • 3.9A, 800V, RDS on = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description D

Contextual Info: KSMD1N80 / KSMU1N80 800V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 1.0A, 800V, RDS on = 20Ω @VGS = 10 V Low gate charge ( typical 5.5nC) Low Crss ( typical 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSM6N80 800V N-Channel MOSFET TO-220 Features • • • • • • 5.8A, 800V, RDS on = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description D

Contextual Info: KSMD2N80 / KSMU2N80 800V N-Channel MOSFET TO-252 Features • • • • • • TO-251 1.8A, 800V, RDS on = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: R8002ANX Datasheet Nch 800V 2A Power MOSFET lOutline VDSS 800V RDS on (Max.) 4.3W ID 2A PD 35W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: KSM8N80C/KSMF8N80C 800V N-Channel MOSFET TO-220F TO-220 Features • • • • • • 8A, 800V, RDS on = 1.55Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.