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    Black Box Corporation

    Black Box Corporation EY800-MM-25PAK

    Add"l Terminated Wires, Mm |Black Box EY800-MM-25PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark EY800-MM-25PAK Bulk 1
    • 1 $46.39
    • 10 $42.82
    • 100 $32.12
    • 1000 $32.12
    • 10000 $32.12
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    800MM2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


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    WEDPN16M72V-XB2X 16Mx72 125MHz WEDPN16M72V-XB2X 128MByte PDF

    W3E16M72SR-XBX

    Contextual Info: White Electronic Designs W3E16M72SR-XBX 16Mx72 Registered DDR SDRAM FEATURES Registered for enhanced performance of bus speeds of 200, 225, and 250 MHz Auto Refresh and Self Refresh Modes Package: Commercial, Industrial and Military Temperature Ranges • 219 Plastic Ball Grid Array PBGA , 32 x 25mm


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    W3E16M72SR-XBX 16Mx72 W3E16M72SR-XBX PDF

    W364M72V-XSBX

    Contextual Info: White Electronic Designs W364M72V-XSBX ADVANCED* 64Mx72 Synchronous DRAM FEATURES BENEFITS High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive


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    W364M72V-XSBX 64Mx72 125MHz W364M72V-XSBX W364M72V-ESSB PDF

    WEDPN8M72V-133BC

    Contextual Info: WEDPN8M72V-133BC HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 133MHz CL3 or 100MHz (CL2) The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728


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    WEDPN8M72V-133BC 8Mx72 133MHz 100MHz 64MByte 512Mb) 432-bit WEDPN8M72V-133BC PDF

    WEDPN16M72V-XBX

    Contextual Info: WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


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    WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz 100MHz, WEDPN16M72V-XBX PDF

    Contextual Info: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features • • • • • • • • • • • • • • Registered for enhanced performance of bus speeds of 250, 225 and 200MHz


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    W3E16M72SR-XBX 200MHz 265mm2 105mm2 1536mm2 800mm2 W3E16M72SR-XBX MIF2031 PDF

    class sstl

    Contextual Info: White Electronic Designs 16Mx72 Registered DDR SDRAM W3E16M72SR-XBX Advanced* FEATURES n Auto Refresh and Self Refresh Modes n Registered for enhanced performance of bus speeds of 200, 225, and 250 MHz n Commercial, Industrial and Military Temperature Ranges


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    16Mx72 200MHz 225MHz 250MHz W3E16M72SR-XBX class sstl PDF

    Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


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    WEDPN8M72V-XBX 8Mx72 125MHz* 64MByte 512Mb) 432-bit 100MHz 125MHz PDF

    XC6223H

    Abstract: XC6223 FR4 GLASS EPOXY XC6223x181
    Contextual Info: XC6223 Series ETR0339-007 Built-in Inrush Current Protection, 300mA High Speed LDO Voltage Regulator •GENERAL DESCRIPTION The XC6223 series is a high speed LDO regulator that features high accurate, low noise, high ripple rejection, low dropout and low power consumption. The series consists of a voltage reference, an error amplifier, a driver transistor, a current limiter, a


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    XC6223 ETR0339-007 300mA XC6223H FR4 GLASS EPOXY XC6223x181 PDF

    60439-1

    Contextual Info: SPECIFICATION FOR LOW VOLTAGE SWITCHBOARD SEN INDEX Description 1.0 STANDARD TECHNICAL REQUIREMENTS 1.1 Standards 1.2 General Operating Conditions 1.3 General Description Of Switchboard 1.3.1 Structure 1.3.2 Covers & Doors 1.3.3 Compartments / Incoming / Cable / Outgoing


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    PDF

    XC6223

    Abstract: xc6223h XC6223C XC6223A USPQ-4B03 SSOT-24 XC6223B
    Contextual Info: XC6223 Series ETR0339-005 Built-in Inrush Current Protection, 300mA High Speed LDO Voltage Regulator •GENERAL DESCRIPTION The XC6223 series is a high speed LDO regulator that features high accurate, low noise, high ripple rejection, low dropout and low power consumption. The series consists of a voltage reference, an error amplifier, a driver transistor, a current limiter, a


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    XC6223 ETR0339-005 300mA xc6223h XC6223C XC6223A USPQ-4B03 SSOT-24 XC6223B PDF

    USP-6B04

    Abstract: XC6420
    Contextual Info: XC6420 Series ETR0352-005 150mA Small Dual LDO Regulator with ON/OFF Switch •GENERAL DESCRIPTION The XC6420 series is a small dual CMOS LDO regulator with 2-channel 150mA outputs. The series features high speed, high accuracy, high ripple rejection and low dropout voltage. The series is capable of high density board installation by the


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    XC6420 ETR0352-005 150mA USP-6B04 PDF

    W3E16M72SR-XBX

    Abstract: class sstl
    Contextual Info: White Electronic Designs W3E16M72SR-XBX 16Mx72 Registered DDR SDRAM FEATURES „ Registered for enhanced performance of bus speeds of 200, 225, and 250 MHz „ Package: „ Auto Refresh and Self Refresh Modes „ Commercial, Industrial and Military Temperature


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    W3E16M72SR-XBX 16Mx72 W3E16M72SR-XBX class sstl PDF

    Contextual Info: W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with


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    W332M72V-XBX 32Mx72 133MHz 256MByte 728-bit 133MHz PDF