800MM2 Search Results
800MM2 Price and Stock
Black Box Corporation EY800-MM-25PAKAdd"l Terminated Wires, Mm |Black Box EY800-MM-25PAK |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
EY800-MM-25PAK | Bulk | 1 |
|
Buy Now |
800MM2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: White Electronic Designs WEDPN16M72V-XB2X 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive |
Original |
WEDPN16M72V-XB2X 16Mx72 125MHz WEDPN16M72V-XB2X 128MByte | |
W3E16M72SR-XBXContextual Info: White Electronic Designs W3E16M72SR-XBX 16Mx72 Registered DDR SDRAM FEATURES Registered for enhanced performance of bus speeds of 200, 225, and 250 MHz Auto Refresh and Self Refresh Modes Package: Commercial, Industrial and Military Temperature Ranges • 219 Plastic Ball Grid Array PBGA , 32 x 25mm |
Original |
W3E16M72SR-XBX 16Mx72 W3E16M72SR-XBX | |
W364M72V-XSBXContextual Info: White Electronic Designs W364M72V-XSBX ADVANCED* 64Mx72 Synchronous DRAM FEATURES BENEFITS High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 3.3V ±0.3V power supply for core and I/Os Fully Synchronous; all signals registered on positive |
Original |
W364M72V-XSBX 64Mx72 125MHz W364M72V-XSBX W364M72V-ESSB | |
WEDPN8M72V-133BCContextual Info: WEDPN8M72V-133BC HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 133MHz CL3 or 100MHz (CL2) The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 |
Original |
WEDPN8M72V-133BC 8Mx72 133MHz 100MHz 64MByte 512Mb) 432-bit WEDPN8M72V-133BC | |
WEDPN16M72V-XBXContextual Info: WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with |
Original |
WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz 100MHz, WEDPN16M72V-XBX | |
Contextual Info: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features • • • • • • • • • • • • • • Registered for enhanced performance of bus speeds of 250, 225 and 200MHz |
Original |
W3E16M72SR-XBX 200MHz 265mm2 105mm2 1536mm2 800mm2 W3E16M72SR-XBX MIF2031 | |
class sstlContextual Info: White Electronic Designs 16Mx72 Registered DDR SDRAM W3E16M72SR-XBX Advanced* FEATURES n Auto Refresh and Self Refresh Modes n Registered for enhanced performance of bus speeds of 200, 225, and 250 MHz n Commercial, Industrial and Military Temperature Ranges |
Original |
16Mx72 200MHz 225MHz 250MHz W3E16M72SR-XBX class sstl | |
Contextual Info: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. |
Original |
WEDPN8M72V-XBX 8Mx72 125MHz* 64MByte 512Mb) 432-bit 100MHz 125MHz | |
XC6223H
Abstract: XC6223 FR4 GLASS EPOXY XC6223x181
|
Original |
XC6223 ETR0339-007 300mA XC6223H FR4 GLASS EPOXY XC6223x181 | |
60439-1Contextual Info: SPECIFICATION FOR LOW VOLTAGE SWITCHBOARD SEN INDEX Description 1.0 STANDARD TECHNICAL REQUIREMENTS 1.1 Standards 1.2 General Operating Conditions 1.3 General Description Of Switchboard 1.3.1 Structure 1.3.2 Covers & Doors 1.3.3 Compartments / Incoming / Cable / Outgoing |
Original |
||
XC6223
Abstract: xc6223h XC6223C XC6223A USPQ-4B03 SSOT-24 XC6223B
|
Original |
XC6223 ETR0339-005 300mA xc6223h XC6223C XC6223A USPQ-4B03 SSOT-24 XC6223B | |
USP-6B04
Abstract: XC6420
|
Original |
XC6420 ETR0352-005 150mA USP-6B04 | |
W3E16M72SR-XBX
Abstract: class sstl
|
Original |
W3E16M72SR-XBX 16Mx72 W3E16M72SR-XBX class sstl | |
Contextual Info: W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with |
Original |
W332M72V-XBX 32Mx72 133MHz 256MByte 728-bit 133MHz | |
|