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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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UGMZ2A1
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Renesas Electronics Corporation
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ALPS / UGMZ2A1 Ultra-Low Current Consumption Bluetooth® Low Energy Module |
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UGMZ2AA
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Renesas Electronics Corporation
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ALPS / UGMZ2AA Ultra-Low Current Consumption Bluetooth® Low Energy Module |
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