800A 711 Search Results

rm3 transistor

Abstract: BUK478
Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

TRANSISTOR 40

Abstract: BUK474-800A
Contextual Info: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a

bussmann semiconductor fuse

Abstract: bussmann semiconductor fuse FWX FWX-500A transistor a 1413 FWX-200A FWX-35A FWX-60A bussmann fwx fuse FWX-350A
Contextual Info: BIF Document Semiconductor Fuse 35-800A, 250 Volts 359 Size 104 103 FWX-200A FWX-350A FXW-400A FWX-500A FWX-600A FWX-800A Virtual Pre-arcing Time In Seconds 102 101 100 FWX-35A FWX-40A FWX-60A FWX-70A FWX-100A FWX-150A 10–1 10–2 10–3 10–4 2 Minimum Melting

BUK426-800A

Contextual Info: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK428-800A

Abstract: BUK428-800B transistor cms
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

K428

Abstract: BUK428-800B diode K428 BUK428-800A K-428 BUK428
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

k426

Abstract: LD 25 V BUK426-800A transistor bu
Contextual Info: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: Coaxial Voltage Controlled Oscillator Wide Band ZX95-800A+ 505 to 800 MHz Features • 0.25-5V tuning voltage range • Low phase noise • Low pulling • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications • R&D • LAB • Instrumentation

KBC-300

Abstract: KBC-35 KBC-100 KBC-110 KBC-40 KBC-45 KBC-50 KBC-60 KBC-70 KBC-80
Contextual Info: Bussmann KBC 600V † 35-800A ® For new installations, Bussmann recommends the 700 Volt FWP series fuse. The 600V fuses are supplied as replacements only. Ordering Information Type Part Number KBC-35 KBC-45 Dimensions Carton Qty. Carton Weight lbs Figure

GI 312 diode

Abstract: sc1s3 K638 BUK638 BUK638-800A GDH473T
Contextual Info: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERN A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

SSG50C120

Contextual Info: TRIAC SSG50C For general A.C. power control applications such as A.C. switches, light controls, speed controls and heater controls etc. • • • • • General A.C. power use It rms = 50A High voltage up to 1200V High surge current of 800A Package types;stud

Contextual Info: Coaxial Voltage Controlled Oscillator Wide Band ZX95-800A+ 505 to 800 MHz Features • 0.25-5V tuning voltage range • low phase noise • low pulling • protected by US patent 6,790,049 CASE STYLE: GB956 Applications •r&d • lab • instrumentation • wireless communications

51923

Contextual Info: Voltage Controlled Oscillator Typical Performance Data ZX95-800A+ V TUNE FREQUENCY POWER OUTPUT HARMONICS FREQ. FREQ PHASE TUNE SENS MHz/V (MHz) (dBm) (dBc) PUSH (MHz/V) OFFSET (KHz) NOISE (dBc/Hz) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75

DIODE B97

Abstract: BUK446-800A BUK446-800A application BUK476 BUK476-800A BUK476-800B 3909
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 - 3 9 - 0 ? BUK 476-800A/B PowerMOS transistor R e p laces B U K 44 6-8 00 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK474

Abstract: BUK474-800A BUK474-800B 3909
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 - 7 ^ 3 9 -— C f? BUK474-800A/B PowerMOS transistor Replaces B U K 4 4 4 -8 0 0 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: T -3 9 -V Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK428-800A/B PowerMOS transistor SbE D PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

FWP-800A

Abstract: FWP-60B FWP-700A FWP-50B FWP-100B FWP-1000A FWP-1200A FWP700
Contextual Info: Semiconductor Fuse 35-100A 700-1200A 700 Volts BIF Document 35785308 Size 104 6 4 2 103 6 4 2 FWP-700A FWP-800A FWP-900A FWP-1000A FWP-1200A 102 6 4 Virtual Pre-Arcing Time In Seconds 2 101 6 4 FWP-35B FWP-40B FWP-50B FWP-60B FWP-70B FWP-80B FWP-90B FWP-100B

FWJ-70A

Abstract: FWJ-1200A FWJ-40A FWJ-800A FWJ-100A FWJ-300A FWJ-50A FWJ-1000A FWJ-1400A FWJ-1800A
Contextual Info: BIF Document Semiconductor Fuse 800-2000A 1000 Volts 35785309 Size 104 6 4 2 103 6 4 2 102 Virtual Pre-Arcing Time In Seconds 6 4 FWJ-800A FWJ-1000A FWJ-1200A FWJ-1400A FWJ-1600A FWJ-1800A FWJ-2000A 2 101 6 4 2 100 6 4 2 10–1 6 4 2 10–2 6 4 2 –3 10 6

FWA-80A

Abstract: DK-2740 FWA-400A bussmann semiconductor fuse dk2740 bussmann LE12 5TH transistor a 1413 FWA-1000A FWA-125A FWA-150A
Contextual Info: BIF Document Semiconductor Fuse 70-1000A, 150 Volts 35785310 Size 104 6 4 2 10 3 6 4 FWA-500A FWA-600A FWA-700A FWA-800A FWA-1000A 2 102 6 4 Virtual Pre-Arcing Time In Seconds 2 101 6 4 2 100 6 4 2 10–1 6 4 2 10–2 6 4 FWA-70A FWA-80A FWA-100A FWA-125A

100-P

Abstract: BUK446 BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor
Contextual Info: PHI LI P S I N T E R N A T I O N A L bSE D Kl 7 1 1 0 Ô S b Ü O b M Ol b E4S H P H I N Philips Semiconductors Product Specification BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

pj 66 diode

Abstract: 100-P BUK438-800A BUK438-800B
Contextual Info: PHILIPS INTERNATIONAL ¡□SE ]> 711002b 3fi4 H P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode fìeld-effect power transistor in a plastic envelope. The device is intended for use in

bsh 13 - n1

Abstract: BUK436-800A BUK436-800B
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK436-800A

Abstract: BUK436-800B
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

diode RP 6040

Abstract: 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors
Contextual Info: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in