SLD65R380E7
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650V N-channel Super-JMOSFET with 11A continuous drain current, 318 mΩ typical RDS(on) at 10V VGS, low gate charge of 15.5nC, and 100% avalanche tested for high reliability in switching power applications. |
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SLB65R380E7
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Maplesemi
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650V N-channel Super-JMOSFET with 11A continuous drain current, 318 mΩ typical RDS(on) at VGS = 10V, low gate charge of 15.5nC, and high avalanche energy rating, suitable for switching power conversion applications. |
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SLF_P65R180E7C
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Maplesemi
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650V N-Channel Super-JMOSFET with 20A continuous drain current, 150mΩ typical RDS(on) at VGS = 10V, 32.1nC gate charge, and 100% avalanche tested for high reliability in switching power applications. |
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SLF65R280E7
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Maplesemi
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650V N-channel Super-JMOSFET with 15A continuous drain current, 280mΩ typical RDS(on) at 10V VGS, 19.6nC gate charge, and TO-220F package, designed for high-efficiency switching power conversion applications. |
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SLF_P70R380E7C
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Maplesemi
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700V N-channel Super-JMOSFET with 11A continuous drain current, 318mΩ typical RDS(on) at VGS = 10V, low gate charge of 16.5nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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SLF65R380E7
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Maplesemi
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650V N-channel Super-Junction MOSFET with 11A continuous drain current, 380mΩ max RDS(on) at VGS = 10V, low gate charge of 15.5nC, and 100% avalanche tested for high reliability in switching power applications. |
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SLD60R280E7
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Maplesemi
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600V N-Channel Super-JMOSFET with 15A continuous drain current, 0.28Ω typical RDS(on) at VGS = 10V, low gate charge of 19.6nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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SLF_P65R380E7C
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Maplesemi
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650V N-Channel Super-JMOSFET with 11A continuous drain current, 318mOhm typical RDS(on) at VGS = 10V, low gate charge of 16.5nC, and 100% avalanche tested for high ruggedness and ultra-fast switching performance. |
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SLF_P70R180E7C
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Maplesemi
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700V N-Channel Super-JMOSFET with 20A continuous drain current, 150mΩ typical RDS(on) at VGS = 10V, low gate charge of 32.1nC, and 100% avalanche tested for high ruggedness and ultra-fast switching performance. |
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SLB65R280E7
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Maplesemi
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N-channel Power MOSFET SLB65R280E7 in TO-263 package, 650V drain-source voltage, 15A continuous drain current, 280 mΩ RDS(on) at 10V VGS, low gate charge of 19.6nC, 100% avalanche tested, Pb-free and RoHS compliant. |
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SLF_P65R280E7C
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Maplesemi
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650V N-Channel Super-JMOSFET with 15A continuous drain current, 238mΩ typical RDS(on) at VGS = 10V, low gate charge of 21.0nC, and 100% avalanche tested for high reliability in switching power applications. |
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SLL65R380E7
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Maplesemi
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650V N-channel Super-JMOSFET with 11A continuous drain current, 318 mΩ typical RDS(on) at VGS = 10V, low gate charge of 15.5nC, and 100% avalanche tested for high ruggedness and fast switching performance. |
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SLT65R180E7
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Maplesemi
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650V N-Channel Super-JMOSFET with 22A continuous drain current, 150mOhm typical RDS(on) at VGS = 10V, low gate charge of 30.2nC, and 100% avalanche tested for high reliability in switching power supplies. |
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SLD65R380E7
