80 AMP CURRENT 100 VOLT DIODE Search Results

rectifier diode 20 amp 800 volt

Abstract: 80 Amp current 100 volt diode 50 Amp 300 volt diode alternator diode 65 amp alternator diode RZ3524C rectifier diode pressfit zener alternator rectifier 400 amp 20 volt rectifier RZ2524C
Contextual Info: RZ2524C/A - 25 Amp RZ3524C/A - 35 Amp RZ5024C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

rectifier diode 20 amp 800 volt

Abstract: 3528 MR2528 MRL2528 MR3528 MR5028 MRL3528 50 Amp 300 volt diode MR502-8
Contextual Info: MR2528/MRL2528 - 25 Amp MR3528/MRL3528 - 35 Amp MR5028/MRL5028 - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Coloured ring denotes cathode Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

Schottky barrier diode 70v 1 amp

Contextual Info: WILLAS FM120-M+ DAP202UTHRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES:

Contextual Info: WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process

marking CODE 56

Abstract: marking code pr
Contextual Info: WILLAS SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ BAT54xxWTHRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE ARRAYS SOT-363 • Batch process design, excellent power dissipation offers

SMD Diode S140

Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in

SOD323 diode schottky code marking 37

Abstract: MIL-STD-19500 FM160MH sod123h
Contextual Info: WILLAS FM120-M+ BAS70WSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

alternator rectifier

Abstract: 100 Amp current 800 volt diode SCD0861-1 RZ2538A RZ2538C RZ3538A RZ3538C RZ5038A RZ5038C
Contextual Info: RZ2538C/A - 25 Amp RZ3538C/A - 35 Amp RZ5038C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

SOD323 diode schottky code marking 37

Abstract: willas sod123h
Contextual Info: WILLAS FM120-M+ BAS40WSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better BARRIER

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode

Contextual Info: WILLAS FM120-M+ BAT4xWSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features FEATURES • Batch process design, excellent power dissipation offers

marking B7 sod123

Abstract: B7 sod123 sod-123 marking code B7
Contextual Info: WILLAS FM120-M+ BAT54xW THRU FM1200-M+ SOT-323 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER Diodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features SWITCHING DIODE design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance.

schottky diode marking A7 SOD

Contextual Info: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

CMSD2004S

Contextual Info: WILLAS FM120-M+ MMBD2004SW THRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse

MYXDS1200-10ABS

Abstract: silicon carbide
Contextual Info: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements

SB065

Abstract: 125OC
Contextual Info: SB060C020-3-W-Ag Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

100 Amp current 1300 volt diode

Abstract: 125OC
Contextual Info: SB051C015-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Contextual Info: SB065C015-3-W-Ag Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

15 amp 1000 Volt Diode

Abstract: 125OC
Contextual Info: SB039C025-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

diode schottky 1000V 10a

Abstract: 125OC
Contextual Info: SB039C040-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

125OC

Contextual Info: SB039C040-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier