N-channel Enhancement Mode Power MOSFET with 68V drain-source voltage, 80A continuous drain current, RDS(on) less than 9mΩ at VGS=10V, and TO-263 package.
N-channel Enhancement Mode Power MOSFET with 68V drain-source voltage, 80A continuous drain current, and RDS(on) less than 9mΩ at VGS=10V, featuring advanced trench technology for high efficiency and low gate charge.