8 PIN IC 8016 Search Results
8 PIN IC 8016 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| 54F193/BEA |   | 54F193/BEA - Dual marked (M38510/34304BEA) |   | ||
| PEF24628EV1X |   | PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip | |||
| ICM7555MTV/883 |   | ICM7555MTV/883 - Dual marked (5962-8950303GA) |   | ||
| ICL8212MTY/B |   | Programmmable High Accuracy Voltage Detecor |   | ||
| LM710CH |   | LM710 - Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8 |   | 
8 PIN IC 8016 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| la4275Contextual Info: Ordering number: EN 2237B Monolithic Linear IC LA4275 6.0 W AF Power Amplifier for Home Stereo, TV Use Features Package Dimensions . Small-sized package of 7-pin SIP . High power and low distortion . . . . . unit : mm 3075-SIP7H PO = 6.0 W at VCC = 25 V, RL = 8 Ω, | Original | 2237B LA4275 3075-SIP7H LA4275] la4275 | |
| LA4275Contextual Info: Ordering number: EN 2237B Monolithic Linear IC LA4275 6.0 W AF Power Amplifier for Home Stereo, TV Use Features Package Dimensions . Small-sized package of 7-pin SIP . High power and low distortion . . . . . unit : mm 3075-SIP7H PO = 6.0 W at VCC = 25 V, RL = 8 Ω, | Original | 2237B LA4275 3075-SIP7H LA4275] LA4275 | |
| la4275
Abstract: D228Y d228-y 
 | Original | 2237B LA4275 3075-SIP7H LA4275] la4275 D228Y d228-y | |
| LA4275Contextual Info: Ordering number: EN 2237B Monolithic Linear IC LA4275 6.0 W AF Power Amplifier for Home Stereo, TV Use Features Package Dimensions . Small-sized package of 7-pin SIP . High power and low distortion 3075-SIP7H PO = 6.0 W at VCC = 25 V, RL = 8 Ω, f = 1 kHz, THD = 1.0% | Original | 2237B LA4275 3075-SIP7H LA4275] LA4275 | |
| Contextual Info: M IT S U B IS H I M ICRO CO M PUTERS M 3 7 1 2 0 M 6 -X X X F P S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DISCRETION The M 37120M 6-XXXFP is a s in g le -c h ip m icro com p uter d e  PIN CONFIGURATION TOP VIEW signed w ith C M O S silicon gate technology. It is housed in | OCR Scan | 37120M 80-pin | |
| Z8015
Abstract: Z8016 AD0-AD15 AD10 AD11 Z8000 Z8010 Z8016A Z8010-MMU Z8016APS 
 | OCR Scan | Z8000Â Z8016 Z8016A 48-pin Z8016PS Z8016CS Z8016PE Z8016CE Z8015 AD0-AD15 AD10 AD11 Z8000 Z8010 Z8010-MMU Z8016APS | |
| sda 4211
Abstract: SDA4211 4211 sda+4211 
 | OCR Scan | ||
| FE8016-01S
Abstract: FE8016-09 grounding transformer 
 | OCR Scan | 8016-XX PF600 FE8016-01S FE8016-09 FE8016-01S FE8016-09 grounding transformer | |
| Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , I N C ro si TQ8016 1.3 Gigabit/sec 16x16 Digital ECL WITCHING ’RODUCTS Crosspoint Switch The T Q 8016 is a 16 x 16 d iffe re n tia l d ig ita l c ro s s p o in t sw itch capable of handling 1.3 G bit/s data rate. The high data rate and exceptional signal | OCR Scan | TQ8016 16x16 | |
| Z8016
Abstract: z8000 microprocessor zilog Z8000 
 | OCR Scan | Z8000® 68-Pin 84-Pin Z8016 z8000 microprocessor zilog Z8000 | |
| M37732S4AFP
Abstract: m37732 S4BFP mitsubishi 7700 machine instruction 
 | OCR Scan | 37732S4AFP 37732S4BFP 37732S4FP M37732S4AFP. 16-BIT M37732S4AFP 80-pin 37732S m37732 S4BFP mitsubishi 7700 machine instruction | |
| 37732S4AFPContextual Info: I • ^24=1020 Ü G l S b 7 b 27=5 ■ M I T 4 M ITSUBISHI M IC RO CO M P U T ERS M 37732S 4F P ,M 37732S 4A F P M 37732S 4B FP M IT S U B IS H I¡H IC M P T R /M IP R C H E » . DESCRIPTION 16-BIT CMOS M ICROCOM PUTER PIN CONFIGURATION TOP VIEW) The M 37732S4FP is a single-chip microcomputer designed | OCR Scan | 37732S 16-BIT 37732S4FP 80-pin GG15737 37732S4AFP | |
| of816
Abstract: 65C16 OAO16 f8l6 
 | OCR Scan | M35046-XXXSP/FP M35046-XXXSP/M35046-XXXFP 20-pin 35046-X 35046XXX 35046-001SP/FP M35046XXXSP/FP of816 65C16 OAO16 f8l6 | |
| M37712
Abstract: M37712M4BXXXFP ScansUX59 
 | OCR Scan | M37712M4BXXXFP 16-BIT 80-pin H-LD333-A KI-9509 M37712 ScansUX59 | |
|  | |||
| 56t6Contextual Info: M ITSUBISHI MICROCOMPUTERS M 3 7 7 0 2 M 2 A X X X F P ,M 3 7 7 0 2 M 2 B X X X F P M 37702S 1A F P .M 37 702S 1B F P M37702S1FP are re s p e c tiv e ly unified Into M 37702M 2AXXXFP and M37702S1 a f p . _ S IN 6L E -C H IP 16-B IT CMOS MICROCOMPUTER DESCRIPTION | OCR Scan | M37702S1FP 37702M M37702S1 37702S M37702M 16-bit 56t6 | |
| CY25811
Abstract: CY25812 CY25814 P2811 P2811A-08ST P2812 P2814 
 | Original | P2811/12/14 P2811, P2812, P2814 P2811: P2812: P2814: CY25811 CY25812 CY25814 P2811 P2811A-08ST P2812 P2814 | |
| M37704M2-XXXFP
Abstract: M37704M2A sumi jo M37704S1AFP M37700M B163A 0005A000 M37704S M37704M F5123 
 | OCR Scan | 37704M M37704M2-XXXFP M37704S1FP M37704M2AXXXFP M37704S1AFP. M37704S1AFP 80-pin 16-bit M37704M2A sumi jo M37700M B163A 0005A000 M37704S M37704M F5123 | |
| CY25811
Abstract: CY25812 CY25814 ASM3P2811 08ST 3P2812BFS 
 | Original | ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B 10MHz CY25811 CY25812 CY25814 ASM3P2811 08ST 3P2812BFS | |
| Contextual Info: December 2003 ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B rev 1.1 Low Power EMI Reduction IC Features  deviation range from ±0.625% to –3.50%. FCC approved method of EMI attenuation.  Provides up to 15dB EMI reduction.  Generates a 1X, 2X and 4X low EMI spread | Original | ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B ASM3P2811A/B: 40MHz ASM3P2812A/B: ASM3P2814A/B: | |
| Contextual Info: P2160 October 2003 rev E High Frequency LCD Panel EMI Reduction IC Features  FCC approved method of EMI attenuation  Provides up to 20 dB of EMI suppression  Generates a low EMI spread spectrum clock of the input frequency  40 MHz to 166 MHz input frequency range | Original | P2160 | |
| Contextual Info: December 2003 ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B rev 1.1 Low Power EMI Reduction IC Features  deviation range from ±0.625% to –3.50%. FCC approved method of EMI attenuation.  Provides up to 15dB EMI reduction.  Generates a 1X, 2X and 4X low EMI spread | Original | ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B ASM3P2811A/B: 40MHz ASM3P2812A/B: ASM3P2814A/B: | |
| "Frequency Generators"
Abstract: CY25811 CY25812 CY25814 ASM3P2811 
 | Original | ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B ASM3P2811A/B: 40MHz ASM3P2812A/B: ASM3P2814A/B: "Frequency Generators" CY25811 CY25812 CY25814 ASM3P2811 | |
| Contextual Info: ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B November 2006 rev 1.5 Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation. • Provides up to 15dB EMI reduction. • Generates a 1X, 2X and 4X low EMI spread spectrum clock of the input frequency. | Original | ASM3P2811A/B ASM3P2812A/B ASM3P2814A/B 10MHz CY25811, CY25812 CY25814. | |
| transistor AL P11
Abstract: M37733M4LXXXHP td 6316 73A0 
 | Original | M37733M4LXXXHP 16-BIT q10-bit q12-bit H-LF461-A KI-9612 M37733M4LXXXHP transistor AL P11 td 6316 73A0 | |