8 BIT NOR FLASH Search Results

4B000H

Contextual Info: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29W T800 Series, HN29W B800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

VT800T-10

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

MO-142DD

Contextual Info: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Senes are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

mitsubishi ordering information

Abstract: HN29VB800 HN29VB800R-10 HN29VB800T-10 HN29VB800T-12 HN29VT800 HN29VT800T-10 HN29VT800T-12 Block-18 Hitachi DSA00108
Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word x 8-bit / 524288-word × 16-bit CMOS Flash Memory ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word X 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS R ash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

HN29WB800

Abstract: HN29WB800T-10 HN29WB800T-12 HN29WB800T-8 HN29WT800 HN29WT800T-10 HN29WT800T-12 HN29WT800T-8 Hitachi DSA00108
Contextual Info: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word × 16-bit CMOS Flash Memory ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with D1NOR (Divided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: KM28U800-T FLASH MEMORY 8M Bit 1M x8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V for Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90ns

Contextual Info: PRELIMINARY INFORMATION IS29GL064 IS29GL064- Top/Bottom Boot and High/Low Sector Protected 3V Page Mode Parallel NOR Flash Memory 64 Mb 8192K x 8-bit / 4096K x 16-bit FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

PIC16F1787

Abstract: ar1020 PIC18F25K80 PIC16F17 PIC16F1786 PIC16F1509 PIC18 lcd 39vf020 PIC16F1503 PIC16F1782
Contextual Info: Corporate Focus Product Selector Guide First Half 2011 Focus Product Selector Guide Featuring: 8-, 16- and 32-bit PIC Microcontrollers dsPIC®Digital Signal Controllers Analog & Interface Products Serial EEPROMs, Serial SRAMs, NOR Flash Memory Wireless and RF Products

H8 HD64

Abstract: HD6473834H H8/325 HS328ESH01H DEC memory catalogue full automatic Washing machines microcontroller UCBIC "hp400" HS3337ESHS1H SE083CPC
Contextual Info: HITACHI H8/300L low power 8-bit microcontrollers Notes 1. This catalogue may wholly or partially be subject to change without notice. 2. This catalogue neither ensures the enforcement of any industrial properties on other rights, nor sanctions the enforcement right there of. Examples of circuits given in this

AN1266

Abstract: RAM cells bit lines "select line" nand gate layout NOR FLASH
Contextual Info: AN1266 APPLICATION NOTE Benchmarking Flash NOR and Flash NAND memories for Code and Data Storage CONTENTS • INTRODUCTION ■ CELL STRUCTURE ■ CELL DIMENSIONS ■ MULTI LEVEL CELLS ■ OPERATIONAL DIFFERENCES ■ COST TRENDS ■ CONCLUSION ■ REFERENCES

N25Q00AA

Abstract: Micron N25Q00AA N25Q00 "Serial NOR Flash" 310-123 Micron 256MB NOR FLASH NOR Flash XIP
Contextual Info: 1Gb, 3V, Multiple I/O Serial NOR Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q00AA Features • • • • • • • • • • • • • • • • • Write protection – Software write protection applicable to every

N25Q00AA13G1240

Abstract: N25Q00AA13GSF40 N25Q00AA13 N25Q00 N25Q00AA13GSF40X N25Q00AA N25Q256 N25Q256A83E1240 SO16Wide N25Q1gb
Contextual Info: 1Gb, 3V, Multiple I/O Serial NOR Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q00AA13G1240X, N25Q00AA13GSF40X Features • • • • • • • • • • • • • • • • • Write protection – Software write protection applicable to every

Micron 32MB NOR FLASH

Abstract: N25Q00AA N25Q00AA13 N25Q00AA13G1240 N25Q00 N25Q0 N25Q00AA13GSF40
Contextual Info: 1Gb, 3V, Multiple I/O Serial NOR Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q00AA13G1240X, N25Q00AA13GSF40X Features • • • • • • • • • • • • • • • • • Write protection – Software write protection applicable to every

JS28F128M29EWL

Abstract: JS28F128M29EWH JS28F128M JS28F128M29EWHF JS28F128M29EW JR28F032M29EWT PC28F128M29EWL JS28F064M29EWXX PZ28F032M29EWHA M29EW
Contextual Info: 32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • VPP/WP# pin protection

JS28F00am29

Abstract: PC28F00BM29EWHA PC28F00AM29EWLA pc28f00am29ew JS28F00AM29EWxx JS28F00AM29EW pc28f00am29 JS28F00AM29EWHA JS28F512M29 RC28F256M29EWLA
Contextual Info: 256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx

Contextual Info: K8S3215ET B F NOR FLASH MEMORY 32Mb F-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

M29W256

Abstract: M29W256G M29W256GH M29W Micron 256MB NOR FLASH
Contextual Info: 256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • VPP/WP# pin protection – Protects first or last block regardless of block protection settings • Software protection – Volatile protection

BA239

Contextual Info: Rev. 1.0, Jun. 2010 K8P5616UZB 256Mb B-die Page NOR FLASH 256M Bit 16M x16, 32M x8 , Page Mode datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

k8a65

Abstract: samsung nor flash
Contextual Info: K8A6415ET B C NOR Flash Memory 64Mb C-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

M29DW256

Abstract: 0C60000 06FFFFF 013F 099FFFF
Contextual Info: 256Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory Features • VPP/WP# pin for fast program and write – Protects the four outermost parameter blocks

FBGA 11x13

Abstract: k8p2716 K8P2716UZC
Contextual Info: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.