18AF
Abstract: BUT18AF UT18 125OC BUT18F BUT18
Contextual Info: Product specification Philips Semiconductors BUT18F; BUT18AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m o to r control
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BUT18
Abstract: BUT18A
Contextual Info: m b^E D N AUER PHILI P S / D I S C R E T E ^53^31 GDSfiMSH 15b BUT18 BUT18A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems, etc.
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but18but18ao-220o-220ab+17z94646
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