7E SOT23 Search Results

FMMTA43

Abstract: FMMTA42R FMMTA42 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R
Contextual Info: FMMTA42 FMMTA43 FMMTA42 FMMTA43 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 – JANUARY 1996 ✪ PARTMARKING DETAIL – FMMTA42 – 3E FMMTA43 – 1E FMMTA42R – 7E FMMTA43R – 5E 160 fT Transition Frequency MHz hFE Static Forward Current Transfer Ratio

FMMTA42R

Abstract: FMMTA42 FMMTA92 7e sot23 3E SOT23
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA42 ✪ ISSUE 4 – MARCH 2001 PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMTA42 ISSUE 5 – SEPTEMBER 2007 ✪ PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage

E2p 93 transistor

Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
Contextual Info: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF

g21 Transistor

Abstract: PMBTH10 PMBTH81
Contextual Info: □□¿SW Philips Semiconductors ESI H A P X Product specification PNP 1 GHz switching transistor ^ ÂI1ER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN • High transition frequency. PMBTH81 t,7E ]> DESCRIPTION Code: V31 1 base DESCRIPTION 2 emitter

transistor T43

Contextual Info: Philips Semiconductors bbSS'Ol 0024b4fl T43 H A P X N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor DESCRIPTION Preliminary specification fc,7E D BF547W PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer,

Contextual Info: • bbSa'IBI 0DBS7TS S3fi « A P X N AKER PHILIPS/DISCRETE L.7E D _ _ PMBD 28 35 PMBD 28 36 J SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PMBD2835 and 2836 consist of two diodes in a microminiature plastic envelope. The anodes are

Contextual Info: • bbS3T31 00BSfl57 bQ5 H A P X N AMER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D _ J SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.

SOT-23 MARKING T36

Abstract: BSR19 BSR19A BSR20 BSR20A
Contextual Info: • 1^53^31 0025560 53b ■ APX N AMER PHILIPS/DISCRE TE BSR20 BSR20A t.7E D SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and especially in telephony applications and encapsulated in a SOT-23 envelope.

transistor IC BT 134

Abstract: sot23 a60 PMBT5551
Contextual Info: • bbSBTBl 0D25flô2 atD ■ APX N ANER PHILIPS/DISCRETE PMBT5551 t.7E D _ _ _ _ A_ SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal tran sisto r fo r general purposes and especially te le ph o n y applications and encapsulated in a SO T23 envelope.

L7E transistor

Abstract: PMBT2907A PMBT2907 1N916
Contextual Info: • 1^53^31 002SÖS7 bD5 H A P X N AUER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.

FMMTA42

Abstract: FMMTA43 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 O_ PARTMARKING D E T A IL- F M M T A 4 2 - 3E FM M TA431E F M M T A 4 2 R - 7E FM M TA43R - 5E FMMTA42 FMMTA43 C O M PLEM EN TARY TYPES - FM M TA42 - FM MTA92 FM M TA43 - FM MTA93

l4p diode

Abstract: mv diode 203 MARKING CODE L4P SOT-23 IP BAT54 h 125 tam
Contextual Info: •i bbsa'ìai N AMER □ Q S 4 3 3 cì llfl ■ PHILIPS/DISCRETE APX L 7E BAT54 D SCHOTTKY BARRIER DIODE Silicon epitaxial S chottky barrier diode w ith an integrated p-n junction protection ring in a micro­ miniature SOT-23 envelope intended fo r surface mounting.

smd transistor TO4

Abstract: SMD Transistor 7e SMD SOT23 7E to4 smd smd to4 transistor DI 763 2N7002 phi ic87 2N7002 UBB073
Contextual Info: • Philips Semiconductors Product specification date of issue April 1991 FEATUR ES • QDsmaa htt « apx N AUER PHILIPS/DISCRETE Data sheet status bbSB'm fc.7E D 2N7002 N-channei vertical D-MOS transistor QUICK R E F E R E N C E DATA Direct interface to C -M O S , TTL,

A4P marking code

Abstract: diode a4p a4p sot-23 sot23 a4p 100X2 BAV70 BAW62 philips sot-23 bav70 MARKING CODE D4t
Contextual Info: • 0 0 2 M 3 SS 330 « a p x N AMER PHILIPS/DISCRETE BAV70 fc,7E D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

marking z3p

Abstract: Y4P marking code marking z2p marking y6p marking z4p marking z8p b5v6 marking z5p marking z6P inverter LS600
Contextual Info: • ^53*131 00SS7b0 211 H A P X N AMER PHI LIPS /DISCRETE BZX84 SERIES L.7E ]> SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a micro m iniature plastic envelope. They are available in three series; one to the international standardized E24 (± 5% range, one in a tolerance of

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 O_ PAR TM ARKING DETAIL - F M M ÏA 4 2 - FMMTA42 FMMTA43 3E FM M TA43- IE F M M T A 4 2 R - 7E F M M TA 43R C O M PLEM ENTAR Y TYPES - 5E F M M T A 4 2 - F M M TA 92 F M M T A 4 3 - F M M TA 93

transistor K 1377

Abstract: 1377 transistor "Programmable Unijunction Transistor" programmable unijunction transistor BRY61 BRY61 EQUIVALENT "Programmable Unijunction Transistor" 70v Philips MARKING CODE a5p 33131 unijunction transistor
Contextual Info: • bbS3T31 N AMER 00SSM3Û 0 2T « A P X PHILIPS/DISCRETE b 7E BRY61 D PROGRAMMABLE UNIJUNCTION TRANSISTOR Planar p-n-p-n trigger device in a m icrom iniature plastic envelope intended fo r applications in th ick and th in -film circuits. It is intended fo r use in switching applications such as m otor control, oscillators,

3D0 marking sot23

Abstract: MARKING CODE 7E VF M74 marking ir 1759 PMBD2835 PMBD2836 2835 diode marking 7E SOT-23 Diode
Contextual Info: • bLSBTBl 0DBS7TS S3fl ■ APX N AMER P H I L I P S / D I S C R E T E L.7E PMBD 2835 PMBD 2836 J> SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The P M B D 2835 and 283 6 consist of tw o diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high speed switching.

smd code HF transistor

Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
Contextual Info: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.

Contextual Info: SIEMENS PNP Silicon Transistors • • • • SMBT 5086 SMBT 5087 For AF input stages and driver applications High current gain Low coliector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Type Marking Ordering Code tape and reel PinCContigui ation

Contextual Info: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a

TRANSISTOR SMD MARKING CODE pKX

Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
Contextual Info: • bLiSB'm DÜBSÖIO b 7 4 ■ N AMER P H I L I P S / D I S C R E T E APX b7E PMBF170 D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a Surface Mounted Device SMD in thin and thick-film circuits w ith applications in relay, high-speed

Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and