7C RAC Search Results

8A35

Abstract: ic lm 317 CY7C43623 CY7C43633 CY7C43643 CY7C43663 CY7C43683
Contextual Info: CYPRESS P R E L IM IN A R Y C Y 7C 43623 C Y 7C 43633/C Y 7C 43643 C Y 7C 43663/C Y 7C 43683 256/512/1K/4K/16K x36 Unidirectional Synchronous FIFO w / Bus Matching Features F ully as y n c h ro n o u s and sim u lta n e o u s read and w rite o p e ratio n p erm itted

JN U10

Abstract: CY7C43624 CY7C43634 CY7C43644 CY7C43664 CY7C43684 bq35
Contextual Info: C Y 7C 43624 C Y 7C 43634/C Y 7C 43644 C Y 7C 43664/C Y 7C 43684 P R E L IM IN A R Y w •tiimttrnjÉÉÉÉÉÉÉt m s¿ *c Y éé P.1 . Xn. * . FI . Ì . . S' ï 256/512/1 K/4K/16K x36 x2 Bidirectional Synchronous FIFO w / Bus M atching Features F ully as yn ch ro n o u s and sim u ltan eo u s read an d w rite

BO-35

Abstract: CY7C43622 CY7C43632 CY7C43642 CY7C43662 CY7C43682 BO35 AQ35 bq35
Contextual Info: • CY7C 43622 C Y 7C 43632/C Y 7C 43642 C Y 7C 43662/C Y 7C 43682 ¡o x o w m . m p' rVv^ ' YX xP XR F ^ P R E L IM IN A R Y 256/512/1 K/4K/16K x36 x2 Bidirectional Synchronous FIFO Features F ully as yn ch ro n o u s and sim u ltan eo u s read an d w rite

7c471

Abstract: westinghouse MCP *7C471 CROUSE-HINDS ECD bus duct UL857 dry transformers 15 KVA nema 4x stainless steel Cutler-Hammer contactor westinghouse breaker bracing wire
Contextual Info: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRMAIN06-0467-2 Name: 7C-467 100: DATE: JAN 19 2006 Time: 5:28:59 PM Operator: RB COLOR: CMYK TCP: 15001 Switch Rack Assemblies Hazardous and Non-Hazardous Typedriver Name: TS name csm no.: 100 7C Description Page No.

cy7c345

Abstract: CY7C345-30HC EA151 series
Contextual Info: CY7C342 CY7C345 PRELIM IN ARY CYPRESS = SEMICONDUCTOR 128-Macrocell M A X tm EPLDs Features Functional Description CY7C342 T he CY 7C 342 an d C Y 7C 345 are E ras­ able P rogram m able Logic Devices E P L D s in w hich C M O S E P R O M cells are used to configure logic func­

l98a

Abstract: 19835
Contextual Info: CY7C198 CY7C199 C Y P P R ^ - SEMICONDUCTOR 32,768 x 8 Static R/W RAM F eatures F unctional D escription • A u tom atic power-down w hen d esele cted T h e C Y 7C L98 a n d C Y 7C 1 9 9 a re h ig h -p e rfo rm a n c e C M O S s ta tic R A M s o rg a n iz e d as

Contextual Info: SAMSUNG ELECTRONICS INC fc>7E ] • 7c]fc,l4]i42 D01b32ß 2fei7 KM48C21OOL/LL SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C21 OOL/LL is a CMOS high speed 2,097,152 b itx s Dynamic Random Access Memory. It's

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR 128-Macrocell CY7C342 CY7C345 M AXTM EPLDs Features Functional Description CY7C342 T h e C Y 7C 342 an d CY7C345 are E ras­ able P rogram m able Logic Devices E P L D s in w hich C M O S E P R O M cells are used to configure logic func­

Contextual Info: ' W CYPRESS SEMICONDUCTOR 64-M acrocell Features Functional Description • 64 M A X m acrocells in 4 LABs T he C Y 7C 343 is a high-perform ance, high-density erasable program m able logic device, available in 44-pin P L C C an d H L C C packages. • 8 dedicated inputs, 28 threestateable, bidirectional I /O pins

Contextual Info: 77 WS1M8V-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • 32 DIP TOP VIEW A 18E 1 ^ 31 □ A15 A12C 4 A 7C 5 29 □ WE E E A4 E A3 E A2 E A1 E AO E 28 □ A13 A6 6 27 □ A8 7 26 □ A9 GND

Contextual Info: CY7C343 PRELIMINARY CYPRESS SEMICONDUCTOR 64-Macrocell MAX EPLD Features Functional Description • 64 M A X m acro cells in 4 L A B s • 8 d ed icated in p u ts, 28 th rees ta te a b le , b id irec tio n a l I / O pins T h e C Y 7C 343 is a hig h -perform ance,

CY7C342-35RMB

Abstract: CY7C342-35HC CY7C342-30HC CY7C342 CY7C342-40RC 7C342-30 7C342-35 CY7C342-35JC propagation delay in IC TTL 7400 CY7C342-35RC
Contextual Info: P R E L IM IN A R Y CYPRESS SEMICONDUCTOR 128-M acrocell CY7C342 CY7C345 M AXTM EPL D s Features Functional Description CY7C342 T h e C Y 7C 342 an d CY7C345 are E ras­ able P rogram m able Logic Devices E P L D s in w hich CM O S E P R O M cells are used to configure logic func­

Contextual Info: CY7C510 7 CYPRESS SEMICONDUCTOR • Fast — C Y 7 C 5 I0 —45 h a s a 4 5 -n s m ax. clock cycle (com m ercial) — C Y 7C 510—55 h as a 5 5-n s (m ax.) clock cycle (m ilitary) • Low power • 16 x 16 bit p arallel m u ltip lica tio n w ith accum u lation to 3 5 -b it resu lt

Contextual Info: OCTOBER ì 999 AS7C3256 5V /3 ,3V 3 2 K x B CMOS SRAM [Com m on I/O Features • A S7C 256 5V v ersio n ) V ery lo w p o w e r c o n s u m p tio n : STANDBY • A S 7C 3256 (3.3V v ersio n ) - 11 m W (A S7C 256) / m a x CMOS I / O • In d u stria l a n d c o m m e rc ia l te m p e ra tu re

Contextual Info: TOSHIBA TMP47C1260/1660/006 C M O S 4-B IT M IC R O C O N TR O L LE R T M P 4 7C 12 6 0N , TM P 47C 1660N T M P 4 7 C 1 2 6 0 F , TM P 47C 1660F T h e 4 7 C 1 2 6 0 /1 6 6 0 a r e t h e h i g h s p e e d a n d h i g h p e r f o r m a n c e 4 - b i t s i n g l e c h i p m i c r o c o m p u t e r , w i t h l a r g e

11PROGRAMMING

Abstract: CY7C445 CY7C446 CY7C455 CY7C456 CY7C457 n52c CY7C447 C445S
Contextual Info: < o *w j. m u iiu ay, \_ruiuuai *-i, u rac Revision: Wednesday, December 16,1992 S7E ]> I I 25Ô bE OGDTOSM TIT MCYP PRELIMINARY 9 Js rF CYPRESS CYPRESS = SEMICONDUCTOR Cascadable Clocked 512 x 18 IK x 18, and 2K x 18 FIFOs with Programmable Flags SEMI CONDUCT OR

CY78923

Abstract: B9235 B9235-40JC CY7B923 CY7C9235 CY7C9235-27 CY7C9235-40 SMPTE-125M SMPTE259M B9235-27JC
Contextual Info: fax id: 5016 wÄÄiiSSSSSSSBtote W E jÊ Ê Ë ^ fT ^ ^ rrv n j-. 0 0 ADVANCED INFORMATION CY7C9235 OYPHhoh = SMPTE-259M/DVB-ASI Scrambler-Controller a C Y 7B 923 H O T Lin k transm itter, w h ich then converts the bit-p ara lle l cha racters in to a S M P T E -259M com p atib le

7C245A

Abstract: CY7C245A 02KX CY7C245A-25QMB CY7C245A-45SC CY7C245AL-35WC 2K EPROM 7C245AL-25
Contextual Info: CY7C245A 5ZSSBS' a CYPRESS .- .-. r £ S * ^ SEMICONDUCTOR Reprogrammable 2K x 8 Registered PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns max set-up • 5V ± 10% Vcc> commercial and

245a

Abstract: ZCC2 CY7C L 245A
Contextual Info: CY7C245A CYPRESS SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 15-ns max set-up • 5V ±10% VCo commercial and military • T T L -com patible I/O • Direct replacement for bipolar PR O M s

lc 245a

Abstract: DIODE SMD 10 - 25L DIODE SMD 10 25L 7C245A 7c245
Contextual Info: CY7C245A •= CYPRESS • 5V ± 10% V c, commercial and military • I I I.-compatible I/O • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge F e a tu re s • Windowed for reprogrammability • CMOS for optimum speed/power

Contextual Info: CY7C235A PRELIMINARY CYPRESS SEMICONDUCTOR • Features • CM OS for optimum speed/power • High speed — 18 ns max set-up — 12 ns clock to output IK x 8 Registered PROM Slim, 300-m il, 24-pin plastic or her­ m etic D IP or 28-pin LCC and PLCC • 5V ± 10% Vcc> commercial and

7c225a

Abstract: 962885-1
Contextual Info: CY7C225A PRELIMINARY CYPRESS = SEMICONDUCTOR Features • • CMOS for optimum speed/power • High speed — 18 ns max set-up 512 x 8 Registered PROM floating gate technology and byte-w ide in­ telligent program m ing algorithm s. Slim 300-m il, 24-pin plastic or her­

Contextual Info: ÿi CY7C225A ~ 5 1 2 x 8 Registered PROM PRELIMINARY 7J= CYPRESS ^ SEMICONDUCTOR Features • CMOS for optimum speed/power • High speed — 18 ns max set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out­

CY7C

Abstract: lc 245a Lh+245a
Contextual Info: CY7C245A CYPRESS I SEMICONDUCTOR • 5V ±10% V cc. commercial and military Features • Windowed for reprogrammablllty • TT L-com patible I/O • CMOS for optimum speed/power • High speed — IS ns max set-up — 10 ns clock to output • Low power • Direct replacement for bipolar