79A DIODE Search Results

79a diode

Abstract: diode 79A VPS05163 W301
Contextual Info: BAS 79A . BAS 79D Silicon Switching Diodes • Switching applications 4 • High breakdown voltage • Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration Package BAS 79A BAS 79A 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79B BAS 79B

79a diode

Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Contextual Info: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2

FDPF79N15

Abstract: FDP79N15
Contextual Info: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V

T0311

Contextual Info: 35E D m ÔS3b3B0 QOlbSlT 1 « S I P Silicon Switching Diodes X~ BAS 79A. BAS 79b _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage • Com m on cathode T yp e M arking O rde ring c o d e 12-tnm tape

FDP79N15

Abstract: FDPF79N15
Contextual Info: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V

FDA79N15

Contextual Info: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)

FDP2532 Mosfet

Contextual Info: FDB2532 / FDP2532 N-Channel UltraFET Trench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 86nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDB2532

Abstract: IS10E nl109 RG101 DIODE N7 33a
Contextual Info: FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

diode sot-89 marking code

Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Contextual Info: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for

KU2307

Abstract: KU2307D
Contextual Info: SEMICONDUCTOR KU2307D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.

KU2307

Abstract: KU2307K 20a8 MARKING 316
Contextual Info: SEMICONDUCTOR KU2307K TECHNICAL DATA N-Ch Trench MOSFET General Description L1 5 This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.

w iw 14

Contextual Info: In te rn a tio n a l p d - s.m i z f 1QR Rectifier IR F 7 4 2 2 D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint

F7422D

Contextual Info: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V

smd CODE 3Gs

Abstract: smd diode schottky code marking 2F SMD DIODE marking AB Schottky
Contextual Info: International IOR Rectifier pd-9.mi2b IRF7422D2 PRELIMINARY FETKY M OSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation 5 T echnology • SO-8 Footprint Vdss = -20V R DS on =

Contextual Info: International 1QR Rectifier PD-9.1412H IR F 7 4 2 2 D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V dss = R DS on =

Contextual Info: International 1QR Rectifier PD-9.1412G IR F 7 4 2 2 D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V dss = R DS on =

IRF1018EPBF

Abstract: IRF1018E IRF1018ESPBF AN-994 IRF530S diode has number 60 on his body High Efficiency Synchronous Rectification in SMPS
Contextual Info: PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.

Smd code S08

Abstract: smd diode schottky code marking 2F
Contextual Info: International pd-9.i 4i 2C IwR Rectifier preliminary IR F 7 4 2 2 D 2 FETKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint a rrr-

10.00 ju

Abstract: IRF7422D2
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8

APT27GA90K

Abstract: MIC4452
Contextual Info: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

h06 diode

Abstract: IRHM3064 IRHM4064 IRHM7064 IRHM8064 JANSR2N7431
Contextual Info: PD - 91564D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM7064 JANSR2N7431 60V, N-CHANNEL REF:MIL-PRF-19500/663 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7064 100K Rads (Si) IRHM3064 300K Rads (Si) IRHM4064

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

mosfet motor dc 48v

Abstract: IRHM3064 IRHM4064 IRHM7064 IRHM8064 JANSR2N7431 91564 12V 35a rectifier circuit
Contextual Info: PD-91564G IRHM7064 JANSR2N7431 60V, N-CHANNEL REF:MIL-PRF-19500/663 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM7064 IRHM3064 IRHM4064 IRHM8064

F7207Q

Abstract: f7207 AUIRF720 AUIRF7207Q
Contextual Info: PD - 97641 AUTOMOTIVE GRADE AUIRF7207Q Features l l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Low On-Resistance P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant