7943 COE Search Results

7945BN

Abstract: 7943A 7945BR dc/PCF 7943 7943
Contextual Info: ANALOG DEVICES FEATURES 12-Bit M ultiplying DACs Guaranteed Specifications w ith +3.3 V /+ 5 V Supply 0.5 LSBs INL and DNL Low Power: 5 jiW typ Fast Interface 40 ns Strobe Pulsewidth (AD7943 40 ns W rite Pulsewidth (AD7945, AD7948) Low Glitch: 60 nV-s w ith A m plifier Connected

AD7945

Contextual Info: ANALOG DEVICES FEATURES 12-Bit M ultiplying DACs Guaranteed Specifications w ith +3.3 V /+ 5 V Supply 0.5 LSBs INL and DNL Low Power: 5 jiW typ Fast Interface 40 ns Strobe Pulsewidth (AD7943 40 ns W rite Pulsewidth (AD7945, AD7948) Low Glitch: 60 nV-s w ith A m plifier Connected

AD7945

Abstract: AD843 AD7543 AD7545 AD7548 AD7943 AD7943AN-B AD7948 OP07
Contextual Info: ► AN ALO G D E V IC E S +3.3 V/+5 V Multiplying 12-Bit DACs AD7943/AD7945/AD7948 FUNCTIONAL BLOCK DIAGRAMS FEATURES 12-B it M u ltip ly in g DACs G u a ra n te ed S p ec ifica tio n s w ith +3.3 V /+ 5 V S u p p ly 0.5 LSBs IN L and DIML L o w Pow er: 5 |xW ty p

AKO 50 365

Abstract: rx 2 g 7943 COE
Contextual Info: A D V A N C E IN F O R M A T IO N Am7943 A Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed -1 9 V to -56.5 V battery operation ■ Current gain = 200 ■ Programmable loop detect threshold

LP 8029

Abstract: telefunken diodes SI 61 L TSHA4400 TSHA4401 photodetector
Contextual Info: TELEFUNKEN Semiconductors TSHA 440. GaAlAs Infrared Emitting Diode in ø 3 mm T–1 Package Description The TSHA 44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

ss 7941

Abstract: TSHA4400
Contextual Info: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA440

Contextual Info: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA4400

Abstract: TSHA4401 TSHA440
Contextual Info: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

Contextual Info: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA4401

Abstract: TSHA440 TSHA4400
Contextual Info: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 %

Contextual Info: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Contextual Info: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°

Contextual Info: TSHA440. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability

aq843

Abstract: tmki AD7543 AD7545 AD7548 AD7943 AD7945 AD7948 JUI7945
Contextual Info: Q ANALOG DEVICES V/+5 V Multiplying . +3.3 V/+5V ' 12-Bit DACs AD7943/AD7945/AD7948 FEATURES „ > , , 12-Bit Multiplying DACs Guaranteed Specifications with +3.3 V/+5 V Supply 0.5 LSBs INL and DNL Low Power: 5 |iW typ Fast Interface 40 ns Strobe Pulse Width AD7943

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: p = 875 nm High reliability

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability