791 AMPLIFIER Search Results

Contextual Info: DATA SHEET SKYFR-000736: 791-821 MHz Single Junction Robust Lead Circulator Applications • Power amplifiers • Wireless infrastructure Features • BeO free • Small, surface mount package • Operating frequency range: 791 MHz to 821 MHz • Shipped on tape and reel

Contextual Info: PRELIMINARY DATA SHEET SKYFR-000736: 791-821 MHz Single Junction Robust Lead Circulator Applications • Power amplifiers • Wireless infrastructure Features • BeO free • Small, surface mount package • Operating frequency range: 791 MHz to 821 MHz • Shipped on tape and reel

rtd pt100 interface to 8051

Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515

transistor c237

Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include

Contextual Info: DATA SHEET SKY65385-11: 791 to 821 MHz Variable Gain Amplifier Applications Description • WCDMA base stations  Femto cells Skyworks SKY65385-11 is a high linearity, Variable Gain Amplifier VGA module. The device includes an input amplifier driver, a

ON 4959

Abstract: "network interface cards"
Contextual Info: 141 Mount Bethel Road • Warren, NJ 07059 www.anadigics.com 908 791-6000 July 2004 ANADIGICS WLAN POWER AMPLIFIERS THE STRENGTH OF DUAL BAND WLAN The current state of the WLAN marketplace can be a confusing one, though the end goals for all are very TECHNOLOGY

mc33202 schematic

Abstract: mc33202 schematic amp motorola MC33201 MC33201D MC33201P MC33201VD MC33201VP MC33202D MC33202P MC33202VD
Contextual Info: "791-fe&f MC33201 MC33202 MC33204 MOTOROLA é I Advance Information LOW VOLTAGE RAIL-TO-RAIL OPERATIONAL AMPLIFIERS Rail-to-Rail™ Operational Amplifiers The MC33201/2/4 family of operational amplifiers provide rail—to—rail operation on both the input and output. The inputs can be driven as high as

passive low pass filter at 50 hz

Abstract: band stop filter with transfer function AN791 APP791 MAX2360 MAX2361 signal path designer Handbook of Filter Synthesis
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: IF filter, transmitter, modulator, differential, passive transmit, simulation Aug 29, 2001 APPLICATION NOTE 791 Passive Differential IF Filters for the MAX2360/61 Transmitter ICs Abstract: Clarifies the design of passive transmit IF filters for application with MAX236X integrated circuits ICs

equivalent ic to PAL 007 E MOSFET

Abstract: mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent
Contextual Info: INDEX Order Code Description Manufacturer 789-719 789-707 792-731 792-561 704-453 704-441 792-160 791-787 790-722 703-722 703-710 597-351 597-363 597-375 941-864 705-263 663-773 705-275 704-957 786-809 786-810 786-822 795-410 505-031 792-962 793-061 793-358

pd791

Abstract: D4013 LS10 jec amplifier
Contextual Info: NEC ELECTRONICS INC ~ Tfl D l f | t,427525 GDlflGMfl t \ ‘T ''¥ h S S ~ //PD791 4 0 9 6 -B IT CCD im a g e s e n s o r N EC Electronics Inc. PRELIM INARY INFORMATION Pin Configuration Description T h e//P D 791 is a C C D charge-coupled device linear

UA791KC

Abstract: transistor k 4110 UA791C MA791 mA791C uA791 A791 791 amplifier peak Current Mode Type II Compensation ma741
Contextual Info: MA791 Power Operational Amplifier FA IR C H IL D A Schlum berger Com pany L in e a r P ro d u cts Description Connection Diagram 10-Pin Metal Package The mA 791 is a High P erform ance M o n o lith ic O p e ra tio n a l A m p lifie r c o n s tru c te d using th e F a irch ild

UPD79

Contextual Info: NEC ELECTRONICS INC ~ Tfl D l f | t,427525 DDlflDMfl L | ~ j~ ~ y / L £ s ' //PD791 4 0 9 6 -B IT CCD im a g e s e n s o r NEC Electronics Inc. PRELIMINARY INFORMATION Pin Configuration Description T h e fiP D 791 is a C C D c h a rg e-co u p le d device linear

BD790

Abstract: BD792 BD789 BD791 MBR340 MSD6100
Contextual Info: MOTOROLA Order this document by BD789/D SEMICONDUCTOR TECHNICAL DATA NPN BD789 BD791* PNP BD790 BD792* Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage —

Contextual Info: User’s Manual 16 R8C/54E Group, R8C/54F Group, R8C/54G Group, R8C/54H Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/5x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: TABLE OF CONTENTS INTRODUCTION Page TYPICAL CONFIGURATION BLOCK DIAGRAMS 5 7 ALPHANUMERICAL INDEX 21 SELECTION GUIDE 31 DATASHEETS - DEFLECTION ICs - CHROMA - INTERMEDIATE FREQUENCY IF - AUDIO, VIDEO AND SOUND SWITCHES - REMOTE CONTROL - AUDIO POWER AMPLIFIERS

810 souriau

Abstract: ATC100B RO4350 souriau 810
Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

gw 340 diode

Abstract: DIODE 236 1334
Contextual Info: MITEQ AU-1642 AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1dB Gain (dB) 27 26 25 24 23 22 21 20 19 18 145 240 340 430 525 620 715 810 25 24 23 22 21 20 19 18 17 16 905 1000

Contextual Info: COUPLER 90º HYBRID 180 WATT DATA SHEET PART NUMBER: HPT3F FEATURES EN 11-1398 12/16/2011 SHEET 1 OF 2 APPLICATIONS Low Profile Surface Mount Package High Power Low Insertion Loss High Isolation 100% Tested Power Amplifiers Modulator Demodulator Signal Distribution Network

NTE7105

Contextual Info: NTE7105 Integrated Circuit Dual 10W + 10W Stereo Amplifier Description: The NTE7105 is an integrated circuit in aa 11−Lead Staggered SIP type package designed for high quality stereo applications such as Hi−Fi and music centers. Features: D High Output Power: 10W + 10W Min @ THD = 1%

Contextual Info: 2SC5078 S ilicon N P N Epitaxial HITACHI ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

RO4350

Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Contextual Info: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,