78M MARKING Search Results

Contextual Info: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2=C 3 n.c. Package 4 n.c. 5=C SCT-595 Maximum Ratings Parameter Symbol

Contextual Info: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2 =C 3 n.c. Package 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol

APL3546A

Contextual Info: APL3546A Power -Distribution Switches with Soft Start Features General Description • • The APL3546A is a power-distribution switch with some protection functions. The device incorporates a 78mΩ N- 78mΩ High Side MOSFET Soft Start Time Programmable by External

Q62702-A3471

Abstract: SCT-595
Contextual Info: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings

SCT-595

Abstract: 78-AD
Contextual Info: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage

APL3546

Contextual Info: APL3546 Power -Distribution Switches with Soft Start General Description Features • • • The APL3546 is a power-distribution switch with some protection functions that can deliver current up to 2.5A. 78mΩ High Side MOSFET 2.5A Continuous Current The device incorporates a 78mΩ N-channel MOSFET

Contextual Info: Ordering number : ENA1243C CPH6444 N-Channel Power MOSFET http://onsemi.com 60V, 4.5A, 78mΩ, Single CPH6 Features • • Low ON-resistance 4V drive • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: Ordering number : ENA1566B MCH6445 N-Channel Power MOSFET http://onsemi.com 60V, 4A, 78mΩ, Single MCPH6 Features • 4V drive • Low ON-resistance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

Contextual Info: Ordering number : ENA1243C CPH6444 N-Channel Power MOSFET http://onsemi.com 60V, 4.5A, 78mΩ, Single CPH6 Features • • Low ON-resistance 4V drive • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: Transistors IC SMD Type Product specification FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE sat 78mÙ at 4.5A.

FCX1053A

Abstract: FCX1053ATA 78m marking
Contextual Info: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.

Contextual Info: Ordering number : ENA1566A MCH6445 N-Channel Power MOSFET http://onsemi.com 60V, 4A, 78mΩ, Single MCPH6 Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage

W344

Contextual Info: FW344A Ordering number : EN8998 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive

Contextual Info: FW344A Ordering number : EN8998A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive

Contextual Info: FW344A Ordering number : EN8998C SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive

Contextual Info: IRF7820PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Qg typ. 200V 78m @VGS = 10V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS(on) at 10V VGS

2070-P

Abstract: ANPEC Marking 2G2 APM2070P J-STD-020A
Contextual Info: APM2070P P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-5A , RDS ON =78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G TO-252 Package D Top View of TO-252

APM2070P

Abstract: APM2070PU STD-020C
Contextual Info: APM2070PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, RDS ON =78mΩ (typ.) @ VGS=-10V RDS(ON)=113mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

Contextual Info: APM2070PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-5A , RDS ON =78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

UPC78M24A

Abstract: MPC78M18AHF MPC78M12 UPC78M05 MPC78M15AHF 78m15a MPC78 78M07A
Contextual Info: ¡» m ìa S iiti BIPOLAR ANALOG INTEGRATED CIRCUITS juPC78M00A SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ¿¿PC78M00A series are monolithic three terminal positive regulators which employ internally current limiting,therma1 shut down,output transistor safe operating area protection make them essentially indestructible.

2SK2437

Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Contextual Info: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process

Contextual Info: SC43B SMD POWER INDUCTORS MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A) SC43B-1R0

Contextual Info: SCC5D23 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCC5D23-2R7 SCC5D23-3R3 SCC5D23-3R9 SCC5D23-4R7 SCC5D23-5R6

Contextual Info: SCRH105 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH105-1R2 SCRH105-2R5 SCRH105-3R3 SCRH105-4R7 SCRH105-5R6 SCRH105-6R8 SCRH105-8R2